Difference between revisions of "PowDeR - Power devices, Detectors and Reliability Group"
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| + | {{PowDeR}} | ||
| + | [http://www.dii.unimo.it/wiki/index.php/PowDeR_-_Power_devices%2C_Detectors_and_Reliability_Group Home] | ||
| + | [http://www.dii.unimo.it/wiki/index.php/PowDeR:Current_and_past_research_projects Projects] | ||
| + | [http://www.dii.unimo.it/wiki/index.php/PowDeR:Publications Publications] | ||
| + | [http://www.dii.unimo.it/wiki/index.php/PowDeR:Lab_capabilities Lab] | ||
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| + | '''WORK IN PROGRESS!''' | ||
== '''Research Activity'''== | == '''Research Activity'''== | ||
| − | The research activity of the PowDeR (Power devices, | + | The research activity of the PowDeR (Power devices, Detectors and Reliability) Group is focused on the characterization, numerical simulation and development of power devices for RF application, such as GaAs pHEMTs and GaN HEMTs, Si-based detectors and their reliability. |
| + | [[Image:Powder-powerapplication.jpg|300px|left]] Compound Semiconductors such as Gallium Nitride (GaN), Gallium Arsenide (GaAs) and Indium Phosphide (InP) represent the current and future solution for all the applications where high output RF power is involved. | ||
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[[PowDeR:Current and past research projects|Current and past research projects]] | [[PowDeR:Current and past research projects|Current and past research projects]] | ||
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tel: +39-059-2056160<br> | tel: +39-059-2056160<br> | ||
email: [mailto:verzellesi.giovanni@unimore.it verzellesi.giovanni@unimore.it]<br> | email: [mailto:verzellesi.giovanni@unimore.it verzellesi.giovanni@unimore.it]<br> | ||
| − | web page:[ | + | web page:[[User:Verzellesi|Verzellesi]] |
'''Alessandro Chini'''<br> | '''Alessandro Chini'''<br> | ||
Latest revision as of 15:57, 29 April 2008
Home - Projects - Publications - Staff - Lab Capabilities - Thesis
Home Projects Publications Lab
WORK IN PROGRESS!
Research Activity
The research activity of the PowDeR (Power devices, Detectors and Reliability) Group is focused on the characterization, numerical simulation and development of power devices for RF application, such as GaAs pHEMTs and GaN HEMTs, Si-based detectors and their reliability.
Compound Semiconductors such as Gallium Nitride (GaN), Gallium Arsenide (GaAs) and Indium Phosphide (InP) represent the current and future solution for all the applications where high output RF power is involved.
Current and past research projects
Teaching Activity
Affidabilità di Componenti e Sistemi Elettronici
Staff
Fausto Fantini
Full Professor
tel: +39-059-2056165
email: fantini.fausto@unimore.it
web page:http://www.dii.unimo.it/wiki/index.php/User:Fantini
Giovanni Verzellesi
Full Professor
tel: +39-059-2056160
email: verzellesi.giovanni@unimore.it
web page:Verzellesi
Alessandro Chini
Assistant Professor
tel: +39-059-2056164
email: chini.alessandro@unimore.it
web page:http://www.dii.unimo.it/wiki/index.php/User:Achini
Matteo Bonaiuti
Research Assistant
email: bonaiuti.matteo@unimore.it
Mustapha Faqir
Ph.D. Student
tel: +39-059-2056191
email: faqir.mustapha@unimore.it
web page:http://www.dii.unimo.it/wiki/index.php/User:56889
Michele Esposto
Ph.D. Student
tel: +39-059-2056191
email: esposto.michele@unimore.it
web page:http://www.dii.unimo.it/wiki/index.php/User:32490
