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2007

  1. M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007.
  2. VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).
  3. S. RAJAN, CHINI A., M. H. WONG, J. S. SPECK, U. K. MISHRA. (2007). N-polar GaN/AlGaN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS. vol. 102. August 2007. ISSN: 0021-8979.
  4. CHINI A. (2007). GaAs vs GaN HEMT power devices. 16th European Workshop on Heterostructure Technology (HETECH). Frejus, France. September 2 – 5, 2007.
  5. CHINI A., G. MENEGHESSO, E. ZANONI. (2007). Electroluminescence and Emission Spectroscopy Including Transient Phenomena in Wide Band-Gap Devices for Future THz Applications. European Microwave Week 2007. Munich, Germany. 8-12 October, 2007.
  6. M. FAQIR, CHINI A., G. VERZELLESI, F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, P. KORDOS. (2007). Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
  7. M. PERONI, P. ROMANINI, A. PANTELLINI, A. CETRONIO, L. MARIUCCI, A. MINOTTI, G. GHIONE, V. CAMARCHIA, E. LIMITI, A. SERINO, CHINI A. (2007). Design, Fabrication and Characterization of Gamma Gate GaN HEMT for High- Frequency/Wide-Band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
  8. S. LAVANGA, C. LANZIERI, M. PERONI, P. ROMANINI, A.CETRONIO, CHINI A., L. MARIUCCI. (2007). Very High Power Field-Plate GaAs PHEMT technology for C and X -band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
  9. G.-F. DALLA BETTA, G. BATIGNANI, M. BOSCARDIN, L. BOSISIO, P. GREGORI, L. PANCHERI, C. PIEMONTE, L. RATTI, VERZELLESI G., N. ZORZI. (2007). Monolithic integration of detectors and transistors on high-resistivity silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 579, pp. 658-663 ISSN: 0168-9002.
  10. M. FAQIR, VERZELLESI G., F. FANTINI, F. DANESIN, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, A. CAVALLINI, A. CASTALDINI, N. LABAT, A. TOUBOUL, C. DUA. (2007). Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs. MICROELECTRONICS RELIABILITY. vol. 47, pp. 1639-1642 ISSN: 0026-2714.
  11. E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384).
  12. G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184).

2006

  1. T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, S.P. DENBAARS, U.K. MISHRA. (2006). Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. pp. 562-565 ISSN: 0018-9383.
  2. C. S. SHU, CHINI A., Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA. (2006). p-GaN/AlGaN/GaN Enhancement-Mode HEMTs. 64th Device Research Conference. June 2006. (pp. 163-164).
  3. CHINI A., G. VERZELLESI. (2006). Off-State Breakdown Optimization in Field Plated GaAs-pHEMTs by Means of Two-Dimensional Numerical Simulation. 15th International Workshop on Heterostructure Technology HETECH 2006. Manchester. 1-4 October 2006.
  4. CHINI A., G. VERZELLESI, G. MENEGHESSO, E. ZANONI. (2006). Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications. European Microwave Week 2006. Manchester. September 2006.
  5. CHINI A., G. VERZELLESI, S. LAVANGA, M. PERONI, C. LANZIERI, A. CETRONIO. (2006). Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs. European Microwave Week 2006. Manchester. September 2006.
  6. FAQIR M, CHINI A., VERZELLESI G, FANTINI F, RAMPAZZO F, MENEGHESSO G, ZANONI E, BERNAT J, KORDOS P. (2006). Physical Investigation of High-Field Degradation Mechanisms in GaN/AlGaN/GaN HEMTS. ROCS Workshop, 2006. [Reliability of Compound Semiconductors]. Nov. 2006.
  7. M. PERONI, P. ROMANINI, C. LANZIERI, A. CETRONIO, M. CALORI, A. PASSASEO, B. POT, L. MARIUCCI, A. DI GASPARE, CHINI A. (2006). Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology. European Microwave Week 2006. Manchester. September 2006.
  8. L. BOSISIO, G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, VERZELLESI G., N. ZORZI. (2006). Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 568, pp. 217-223 ISSN: 0168-9002.
  9. MENEGHESSO G, RAMPAZZO F, KORDOS P, VERZELLESI G., ZANONI E. (2006). Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 53, pp. 2932-2941 ISSN: 0018-9383.
  10. VERZELLESI G., D. BERGAMINI, G.-F. DALLA BETTA, C. PIEMONTE, M. BOSCARDIN, L. BOSISIO, S. BETTARINI, G. BATIGNANI. (2006). N-p-n bipolar-junction-transistor detector with integrated p-n-p biasing transistor-feasibility study, design, and first experimental results. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. vol. 21, pp. 194-200 ISSN: 0268-1242.
  11. VERZELLESI G., G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE. (2006). BJT-based detector on high-resistivity silicon with integrated biasing structure. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 567, pp. 285-289 ISSN: 0168-9002.
  12. M. FAQIR, A. CHINI, VERZELLESI G., F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, P. KORDOS. (2006). Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs. Reliability of Compound Semiconductor Workshop (ROCS 2006). San Antonio, TX (USA). San Antonio, TX (USA), Nov. 2006.

2005

  1. VERZELLESI G., BASILE A.F., CAVALLINI A., CASTALDINI A., CHINI A., CANALI C. (2005). Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 52, pp. 594-602 ISSN: 0018-9383.
  2. VERZELLESI G., G. MENEGHESSO, A. CHINI, E. ZANONI, C. CANALI. (2005). DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. MICROELECTRONICS RELIABILITY. vol. 45, pp. 1585-1592 ISSN: 0026-2714.
  3. CHINI A., M. PERONI, P. ROMANINI, C. LANZIERI, V. TEPPATI, V. CAMARCHIA, A. PASSASEO, G. VERZELLESI. (2005). Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs. 14th International Workshop on Heterostructure Technology HETECH 2005. 2-5 October 2005.
  4. CHINI A., S. RAJAN, M. H. WONG, Y. FU, J. S. SPECK, U. K. MISHRA. (2005). Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs. Device Research Conference (DRC) 2005. 20-22 June 2005.
  5. CHINI A., Y. FU, S. RAJAN, J. SPECK, U. K. MISHRA. (2005). An experimental method to identify bulk and surface traps in GaN HEMTs. International Symposium on Compound Semiconductors (ISCS). 18-22 September 2005.
  6. G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, G. TAMIAZZO, E. ZANONI, J. BERNAT, P. KORDOS, A.F. BASILE, CHINI A., AND G. VERZELLESI. (2005). HOT ELECTRON STRESS DEGRADATION IN UNPASSIVATED GaN/AlGaN/GaN HEMTs ON SiC. International Reliability Physics Symposium (IRPS 2005).
  7. G. VERZELLESI, G. MENEGHESSO, CHINI A., E. ZANONI, C. CANALI. (2005). “DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues”. 16th EUROPEAN SYMPOSIUM RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS. October 2005.
  8. S. RAJAN, CHINI A., M. WONG, C. SUH, Y. FU, M. J. GRUNDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). Advanced Transistor Structures based on N-face GaN. International Symposium on Compound Semiconductors. 18-22 September 2005.
  9. S. RAJAN, CHINI A., M. WONG, Y. FU, M. GRUDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). N-face AlGaN/GaN modulation-doped field effect transistors. International Conference on Nitride Semiconductors. August 28 - September 2, 2005.
  10. G. BERTUCCIO, S. BINETTI, S. CACCIA, R. CASIRAGHI, A. CASTALDINI, A. CAVALLINI, C. LANZIERI, A. LE DONNE, F. NAVA, S. PIZZINI, L. RIGUTTI, VERZELLESI G., E. VITTONE. (2005). Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors. MATERIALS SCIENCE FORUM. vol. 483, pp. 1015-1019 ISSN: 0255-5476.

2004

  1. VERZELLESI G., A. CAVALLINI, A.F. BASILE, A. CASTALDINI, C. CANALI. (2004). The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs. IEEE ELECTRON DEVICE LETTERS. vol. 25(8), pp. 517-519 ISSN: 0741-3106.
  2. MENEGHESSO G., VERZELLESI G., PIEROBON R., RAMPAZZO F., CHINI A., MISHRA U.K., CANALI C., ZANONI E. (2004). Surface-related drain current dispersion effects in AlGaN-GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 51, pp. 1554-1561 ISSN: 0018-9383.
  3. CHINI A., BUTTARI D., COFFIE R., HEIKMAN S., KELLER S., MISHRA U.K. (2004). 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate. ELECTRONICS LETTERS. vol. 40, pp. 73-74 ISSN: 0013-5194.
  4. CHINI A., BUTTARI D., COFFIE R., SHEN L., HEIKMAN S., CHAKRABORTY A., KELLER S., MISHRA U.K. (2004). Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 229-231 ISSN: 0741-3106.
  5. CHINI A., WITTICH J., HEIKMAN S., KELLER S., DENBAARS S.P., MISHRA U.K. (2004). Power and linearity characteristics of GaN MISFETs on sapphire substrate. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 55-57 ISSN: 0741-3106.
  6. HUILI XING, DORA Y., CHINI A., HEIKMAN S., KELLER S., MISHRA U.K. (2004). High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 161-163 ISSN: 0741-3106.
  7. L. SHEN, R. COFFIE, D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, CHINI A., S. KELLER, S.P. DENBAARS, AND U.K. MISHRA. (2004). Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design. JOURNAL OF ELECTRONIC MATERIALS. pp. 422-425 ISSN: 0361-5235.
  8. SHEN L., COFFIE R., BUTTARI D., HEIKMAN S., CHAKRABORTY A., CHINI A., KELLER S., DENBAARS S.P., MISHRA U.K. (2004). High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 7-9 ISSN: 0741-3106.
  9. XU H., SANABRIA C., CHINI A., KELLER S., MISHRA U.K., YORK R.A. (2004). A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. vol. 14, pp. 262-264 ISSN: 1531-1309.
  10. CHINI A., D. BUTTARI, R. COFFIE, L. SHEN, T. PALACIOS, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, U. K. MISHRA. (2004). Effect of Gate Recessing on Linearity Characteristics of AlGaN/Gan HEMTs. Device Research Conference. 21-23 June 2004. (pp. 33-34).
  11. D. BUTTARI, CHINI A., A. CHAKRABORTY, L. MCCARTHY, H. XING, T. PALACIOS, L. SHEN, S. KELLER, U.K. MISHRA. (2004). Selective Dry Etching of GaN over AlGaN in BCl3/SF6 Mixtures. IEEE Lester Eastman Conference on High Performance Devices. August 4-6, 2004.
  12. H. XU, C. SANABRIA, CHINI A., Y., WEI, S. HEIKMAN, S. KELLER, U.K. MISHRA, R.A. YORK. (2004). A New Field Plate GaN HEMT Structure with Improved Power & Noise Performance. IEEE Lester Eastman Conference on High Performance Devices. August 4-6, 2004.
  13. L. SHEN, D. BUTTARI, S. HEIKMAN, CHINI A., R. COFFIE, L. MCCARTHY, A. CHAKRABORTY, S. KELLER, S. P. DENBAARS, U. K. MISHRA. (2004). Improved high power thick-GaN-capped AlGaN/GaN HEMTs wothout surface passivation. Device Research Conference. 21-23 June 2004. (pp. 39-40).
  14. S. RAJAN, H. XING, A. CHAKRABORTY, CHINI A., M. J. GRUNDMANN, T. PALACIOS, S. P. DENBAARS, D. JENA, U. K. MISHRA. (2004). Tailoring of Trasconductance Profile for Improved Linearity in AlGaN/GaN Polarization-Doped Field Effect Transistors. International Workshop on Nitride Semiconductors. July 19 - 23, 2004.
  15. S. XIE, V. PAIDI, S. HEIKMAN, CHINI A., U. MISHRA, S. LONG, M. J. W. RODWELL. (2004). High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode. IEEE Lester Eastman Conference on High Performance Devices. August 4-6, 2004.
  16. T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, S. KELLER, S. P. DENBAARS, U. K. MISHRA. (2004). Use of Multichannel Heterostructures to Improve the Access Resistance and ft Linearity in GaN-based HEMTs. Device Research Conference. 21-23 June 2004. (pp. 41-42).
  17. A. BASILE, VERZELLESI G., C. CANALI, A. CAVALLINI, A. CASTALDINI, C. LANZIERI. (2004). Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs. 13th European Workshop on Heterostructure Technology (HETECH’04). Koutouloufari (Creta), Oct. 2004.
  18. A. SLEIMAN, A. DI CARLO, P. LUGLI, VERZELLESI G., G. MENEGHESSO, E. ZANONI. (2004). Current collapse associated with surface states in GaN-based HEMT’s. Theoretical/experimental investigations. IEEE International Conference on Simulation of Semiconductor Processes and Devices. Munich (Germany), Sept. 2004.
  19. E. ZANONI, G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, A. CHINI, VERZELLESI G. (2004). Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs. European Microwave Week, Workshop Proceedings, GAAS WS 2.
  20. R. PIEROBON, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, M. MARSO, P. KORDOS, A. BASILE, VERZELLESI G. (2004). Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs. 13th European Workshop on Heterostructure Technology (HETECH’04). Koutouloufari (Crete, Greece), Ottobre 2004.

2003

  1. A. CAVALLINI, VERZELLESI G., A.F. BASILE, C. CANALI, A. CASTALDINI, E. ZANONI. (2003). Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS. vol. 94(8), pp. 5279-5301 ISSN: 0021-8979.
  2. F. NAVA, E. VITTONE, P. VANNI, VERZELLESI G., P.G. FUOCHI, C. LANZIERI, M. GLASER. (2003). Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma rays. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 505, pp. 645-655 ISSN: 0168-9002.
  3. VERZELLESI G., A. BASILE, A. MAZZANTI, A. CAVALLINI, C. CANALI. (2003). Energetic and spatial localisation of deep-level traps responsible for dc-to-RF dispersion effects in AlGaAs-GaAs heterostructure field-effect transistors. ELECTRONICS LETTERS. vol. 39(21) ISSN: 0013-5194.
  4. VERZELLESI G., A. BASILE, A. MAZZANTI, C. CANALI, G. MENEGHESSO, E. ZANONI. (2003). Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs. ELECTRONICS LETTERS. vol. 39(10), pp. 810-811 ISSN: 0013-5194.
  5. VERZELLESI G., A. MAZZANTI, A. BASILE, A BONI, E. ZANONI, C. CANALI. (2003). Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs). IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 50(8), pp. 1733-1740 ISSN: 0018-9383.
  6. CHINI A., COFFIE R., MENEGHESSO G., ZANONI E., BUTTARI D., HEIKMAN S., KELLER S., MISHRA U.K. (2003). 2.1 A/mm current density AlGaN/GaN HEMT. ELECTRONICS LETTERS. vol. 39, pp. 625-626 ISSN: 0013-5194.
  7. COFFIE R., SHEN L., PARISH G., CHINI A., BUTTARI D., HEIKMAN S., KELLER S., MISHRA U.K. (2003). Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz. ELECTRONICS LETTERS. vol. 39, pp. 1419-1420 ISSN: 0013-5194.
  8. D. BUTTARI, CHINI A., T. PALACIOS, R. COFFIE, L. SHEN, H. XING, S. HEIKMAN, L. MCCARTHY, A. CHAKRABORTY, S. KELLER, U. K. MISHRA. (2003). Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures. APPLIED PHYSICS LETTERS. vol. 83, pp. 4779-4781 ISSN: 0003-6951.
  9. MENEGHESSO G., CHINI A., MARETTO M., ZANONI E. (2003). Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 50, pp. 324-332 ISSN: 0018-9383.
  10. PAIDI V., SHOUXUAN XIE, COFFIE R., MORAN B., HEIKMAN S., KELLER S., CHINI A., DENBAARS S.P., MISHRA U.K., LONG S., RODWELL M.J.W. (2003). High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. vol. 51, pp. 643-652 ISSN: 0018-9480.
  11. SHOUXUAN XIE, PAIDI V., COFFIE R., KELLER S., HEIKMAN S., MORAN B., CHINI A., DENBAARS S.P., MISHRA U., LONG S., RODWELL M.J.W. (2003). High-linearity class B power amplifiers in GaN HEMT technology. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. vol. 13, pp. 284-286 ISSN: 1531-1309.
  12. CHINI A., BUTTARI D., COFFIE R., LIKUN SHEN, HEIKMAN S., CHAKRABORTY A., KELLER S., MISHRA U.K. (2003). High performance AlGaN/GaN HEMTs with a field plated gate structure. International Semiconductor Device Research Symposium. Dec. 10-12, 2003. (pp. 434-435).
  13. H. XU, C. SANABRIA, CHINI A., S. KELLER, U. K. MISHRA, R. YORK. (2003). Robust C-Band Mmic Low noise Amplifier Using Algan/Gan Hemt Power Devices. 8th Wide-Bandgap III-Nitride Workshop. Sep. 29-Oct. 1, 2003.
  14. R. COFFIE, S. KELLER, L. MCCARTHY, D. BUTTARI, CHINI A., S. HEIKMAN, L. SHEN AND U. K. MISHRA. (2003). Improved p-capped GaN-AlGaN-GaN HEMT for power applications. 5th International Conference on Nitride Semiconductors. 25-30 May 2003.
  15. SHEN L., CHINI A., COFFIE R., BUTTARI D., HEIKMAN S., KELLER S., MISHRA U. (2003). Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT. Device Research Conference. 23-25 June 2003. (pp. 63-64).
  16. UMESH K. MISHRA, S.P. DENBAARS, J.SPECK, S. KELLER, L. SHEN, CHINI A., D. BUTTARI, T.PALACIOS, B. MORAN AND S. HEIKMAN. (2003). COMPARISON OF AlGaN/GaN HEMTs GROWN ON SAPPHIRE AND SILICON CARBIDE. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003).
  17. E. ZANONI, G. MENEGHESSO, VERZELLESI G., R. PIEROBON, F. RAMPAZZO, A. CHINI. (2003). Reliability aspects of GaN microwave devices. European Gallium Arsenide and Other Semiconductors Application Symposium (GAAS). Munich (Germany), Ottobre 2003. (pp. 23-41). Workshop Proceedings, GAAS WS 1 “Reliability of Microwave Devices”.
  18. G. MENEGHESSO, VERZELLESI G., R. PIEROBON, F. RAMPAZZO, A. CHINI, C. CANALI, E. ZANONI. (2003). Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation. WOCSDICE 2003. Furigen (Switzerland), Maggio 2003. (pp. 29-30).
  19. G. MENEGHESSO, VERZELLESI G., R. PIEROBON, F. RAMPAZZO, A. CHINI, E. ZANONI. (2003). Instabilities and degradation in GaN-based devices. 12th European Workshop on Heterostructure Technology (HETECH’03). San Rafael (Spain), Ottobre 2003.
  20. VERZELLESI G., A. F. BASILE, A. CAVALLINI, A. CASTALDINI, C. LANZIERI, C. CANALI. (2003). Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s. IEEE EDMO 2003. Orlando, FL (USA), Novembre 2003. (pp. 24-29).
  21. VERZELLESI G., A. MAZZANTI, C. CANALI, G. MENEGHESSO, A. CHINI, E. ZANONI. (2003). Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs. 2003 GaAs Reliability Workshop. San Diego (California, USA), Ottobre 2003.

2002

  1. A. MAZZANTI, VERZELLESI G., C. CANALI, G. MENEGHESSO, E. ZANONI. (2002). Physics-based explanation of kink dynamics in AlGaAs/GaAs HFET’s. IEEE ELECTRON DEVICE LETTERS. vol. 23(7), pp. 383-385 ISSN: 0741-3106.
  2. A. MAZZANTI, VERZELLESI G., G. SOZZI, R. MENOZZI, C. LANZIERI, C. CANALI. (2002). Physical investigation of trap-related effects in power HFETs and their reliability implications. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. vol. 2(3), pp. 1-7 ISSN: 1530-4388.
  3. G.-F. DALLA BETTA, M. BOSCARDIN, L. BOSISIO, S. DITTONGO, P. GREGORI, I. RACHEVSKAIA, VERZELLESI G., N. ZORZI. (2002). A novel silicon microstrip termination structure with all-p-type multiguard and scribe-line implants. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 49(4), pp. 1712-1716 ISSN: 0018-9499.
  4. LARCHER L., VERZELLESI G., PAVAN P., LUSKY E., BLOOM I., EITAN B. (2002). IMPACT OF PROGRAMMING CHARGE DISTRIBUTION ON THRESHOLD VOLTAGE AND SUBTHRESHOLD SLOPE OF NROM MEMORY CELLS. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 49, pp. 1939-1946 ISSN: 0018-9383.
  5. VERZELLESI G., DALLA BETTA G.-F., BOSCARDIN M., PIGNATEL G.U., BOSISIO L. (2002). Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. A 477(1-3), pp. 220-225 ISSN: 0168-9002.
  6. VERZELLESI G., VANNI P., NAVA F., CANALI C. (2002). Investigation on the charge collection properties of a 4H-SiC Schottky diode detector. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. A 476, pp. 717-721 ISSN: 0168-9002.
  7. A. MAZZANTI, VERZELLESI G., A.F. BASILE, C. CANALI, G. SOZZI, R. MENOZZI. (2002). Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs. European Gallium Arsenide and Other Semiconductors Applications (GAAS 2002). Milano, Settembre 2002. (pp. 389-392).
  8. A. MAZZANTI, VERZELLESI G., C. CANALI, G. SOZZI, R. MENOZZI. (2002). Numerical analysis of hot electron degradation modes in power HFETs. 13th Workshop on Physical Simulation of Semiconductor Devices. Leeds (UK), Marzo 2002.
  9. A.F. BASILE, A. MAZZANTI, E. MANZINI, VERZELLESI G., C. CANALI, R. PIEROBON, C. LANZIERI. (2002). Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs. EDMO 2002. Manchester (UK), Novembre 2002. (pp. 63-68).
  10. M. BOSCARDIN, L. BOSISIO, A. CANDELORI, G.-F. DALLA BETTA, S. DITTONGO, P. GREGORI, A. LITOVCHENKO, C. PIEMONTE, I. RACHEVSKAIA, S, RONCHIN, VERZELLESI G., N. ZORZI. (2002). An improved all-p-type multiguard termination structure for silicon radiation detectors. IEEE Nuclear Science Symposium. Norfolk (Virginia, USA). (pp. 264-268).
  11. VERZELLESI G., G. MENEGHESSO, A. MAZZANTI, C. CANALI, E. ZANONI. (2002). Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations. 13th Workshop on Physical Simulation of Semiconductor Devices. Leeds (UK), Marzo 2002.
  12. VERZELLESI G., R. PIEROBON, F. RAMPAZZO, G. MENEGHESSO, A. CHINI, U.K. MISHRA, C. CANALI, E. ZANONI. (2002). Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s. IEEE Int. Electron Devices Meeting Technical Digest (IEDM02). S. Francisco (California, USA), Dec. 2002. (pp. 689-692).
  13. BUTTARI D., CHINI A., MENEGHESSO G., ZANONI E., CHAVARKAR P., COFFIE R., ZHANG N.Q., HEIKINAN S., SHEN L., XING H., ZHENG C., MISHRA U.K. (2002). Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs. IEEE ELECTRON DEVICE LETTERS. vol. 23, pp. 118-120 ISSN: 0741-3106.
  14. BUTTARI D., CHINI A., MENEGHESSO G., ZANONI E., MORAN B., HEIKMAN S., ZHANG N.Q., SHEN L., COFFIE R., DENBAARS S.P., MISHRA U.K. (2002). Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs. IEEE ELECTRON DEVICE LETTERS. vol. 23, pp. 76-78 ISSN: 0741-3106.
  15. COFFIE R., BUTTARI D., HEIKMAN S., KELLER S., CHINI A., SHEN L., MISHRA U.K. (2002). p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs). IEEE ELECTRON DEVICE LETTERS. vol. 23, pp. 588-590 ISSN: 0741-3106.
  16. N. ARMANI, V. GRILLO, G. SALVIATI, M. MANFREDI, M. PAVESI, CHINI A., G. MENEGHESSO, E. ZANONI. (2002). Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies. JOURNAL OF APPLIED PHYSICS. vol. 92, pp. 2401-2405 ISSN: 0021-8979.
  17. COFFIE R., HEIKMAN S., BUTTARI D., KELLER S., CHINI A., SHEN L., ZHANG N., JIMENEZ A., JENA D., MISHRA U.K. (2002). P-GaN/AlGaN/GaN high electron mobility transistors. Device Research Conference. 24-26 June 2002. (pp. 25-26).
  18. D. BUTTARI, CHINI A., S. HEIKMAN, L. MCCARTHY, A. CHAKRABORTY, S. KELLER, S. P. DENBAARS, U. K. MISHRA. (2002). Dry-Etch gate recessing in AlGaN/GaN HEMTs. Solid State Technology Review. 19-20 Nov. 2002.
  19. R. COFFIE, S. KELLER, L. MCCARTHY, CHINI A., D. BUTTARI, S. HEIKMAN, L. SHEN, U. K. MISHRA. (2002). p-Gan cap layer for dispersion control in AlGaN/GaN HEMTs. Solid State Technology Review. 19-20 Nov. 2002.
  20. S. XIE, V. PAIDI, R. COFFIE, S. KELLER, S. HEIKMAN, CHINI A., U. MISHRA, S. LONG, M. RODWELL. (2002). High Linearity Class B Power Amplifiers in GaN HEMT Technology. IEEE Topical Workshop on Power Amplifiers for Wireless Communications. 9-10 Sep. 2002.

2001

  1. BACCHETTA N., BISELLO D., CANDELORI A., DA ROLD M., DESCOVICH M., KAMINSKY A., MESSINEO A., RIZZO F., VERZELLESI G. (2001). Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. A 461/1-3, pp. 204-206 ISSN: 0168-9002.
  2. BORGARINO M., SOZZI G., MAZZANTI A., VERZELLESI G. (2001). Gate-lag effects in AlGaAs/GaAs power HFET's. MICROELECTRONICS RELIABILITY. vol. 41, pp. 1585-1589 ISSN: 0026-2714.
  3. DALLA BETTA G.-F., PIGNATEL G.U., VERZELLESI G., BOSCARDIN M., FAZZI A., BOSISIO L. (2001). Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. A 458/1-2, pp. 275-280 ISSN: 0168-9002.
  4. MENEGHESSO G., CHINI A., VERZELLESI G., CAVALLINI A., CANALI C., ZANONI E. (2001). Trap characterization in buried-gate n-channel 6H-SiC JFET's. IEEE ELECTRON DEVICE LETTERS. vol. 22(9), pp. 432-434 ISSN: 0741-3106.
  5. NAVA F., VANNI F., VERZELLESI G., CASTALDINI A., CAVALLINI A., POLENTA L., NIPOTI R., DONOLATO C. (2001). Charge particle detection properties of epitaxial 4H-SiC Schottky diodes. MATERIALS SCIENCE FORUM. vol. 353-356, pp. 757-762 ISSN: 0255-5476.
  6. TEDIOSI E., BORGARINO M., VERZELLESI G., SOZZI G., MENOZZI R. (2001). Surface effects on turn-off characteristics of AlGaAs/GaAs HFET's. ELECTRONICS LETTERS. vol. 37(11), pp. 719-720 ISSN: 0013-5194.
  7. VERZELLESI G., DALLA BETTA G.-F., PIGNATEL G.U. (2001). Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 48(4), pp. 972-976 ISSN: 0018-9499.
  8. VERZELLESI G., MENEGHESSO G., CAVALLINI A., ZANONI E. (2001). Trap energetic and spatial localization in buried-gate 6H-SiC JFETs's by means of numerical device simulation. IEEE ELECTRON DEVICE LETTERS. vol. 22(12), pp. 579-581 ISSN: 0741-3106.
  9. A. MAZZANTI, VERZELLESI G., C. CANALI, A. CHINI, G. MENEGHESSO, E. ZANONI, C. LANZIERI. (2001). Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs. 11th European Heterostructure Technology Workshop (HETECH 2001). Padova, Ottobre 2001. (pp. 73-74).
  10. A. MAZZANTI, VERZELLESI G., L. VICINI, C. CANALI, A. CHINI, G. MENEGHESSO, E. ZANONI, C. LANZIERI. (2001). Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs. EDMO 2001. Vienna (Austria), Novembre 2001. (pp. 137-142).
  11. E. TEDIOSI, VERZELLESI G., C. CANALI, G. SOZZI, R. MENOZZI, C. LANZIERI. (2001). Surface-related kink effect in AlGaAs/GaAs power HFETs. WOCSDICE 2001. Quartu S. Elena (Cagliari), Maggio 2001. (pp. 139-140).
  12. G. MENEGHESSO, A. CHINI, E. ZANONI, VERZELLESI G., E. TEDIOSI, C. CANALI, A. CAVALLINI, A. CASTALDINI. (2001). Trap-related effects in 6H-SiC buried-gate JFETs. WOCSDICE 2001. Quartu S. Elena (Cagliari), Maggio 2001. (pp. 169-170).
  13. G.-F. DALLA BETTA, M. BOSCARDIN, L. BOSISIO, S. DITTONGO, P. GREGORI, I. RACHEVSKAIA, VERZELLESI G., N. ZORZI. (2001). An all-p-type termination structure for silicon microstrip detectors. IEEE Nuclear Science Symposium. San Diego (California, USA).
  14. R. MENOZZI, G. SOZZI, VERZELLESI G., M. BORGARINO, C. CANALI, C. LANZIERI. (2001). Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs. 11th European Heterostructure Technology Workshop (HETECH 2001). Padova, Ottobre 2001. (pp. 59-62).
  15. R. MENOZZI, G. SOZZI, VERZELLESI G., M. BORGARINO, C. LANZIERI, C. CANALI. (2001). Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design. 2001 GaAs Reliability Workshop. Baltimore (Maryland, USA), Ottobre 2001. (pp. 89-95).
  16. VERZELLESI G., G. MENEGHESSO, A. CAVALLINI, E. ZANONI, C. CANALI. (2001). Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs. 11th European Heterostructure Technology Workshop (HETECH 2001). Padova, Ottobre 2001. (pp. 55-56).
  17. BUTTARI D., CHINI A., MENEGHESSO G., ZANONI E., SAWDAI D., PAVLIDIS D., HSU S.S.H. (2001). Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs. IEEE ELECTRON DEVICE LETTERS. vol. 22, pp. 197-199 ISSN: 0741-3106.
  18. G. MENEGHESSO, CHINI A., E. ZANONI. (2001). Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs. MICROELECTRONICS RELIABILITY. vol. 41, pp. 1579-1584 ISSN: 0026-2714.
  19. CHINI A., F. BRUNI, D. BUTTARI, G. MENEGHESSO, E. ZANONI. (2001). Current Collapse in AlGaN/GaN HEMTs. 25° Workshop on Compound Semiconductor Devices and Integrated Circuits. 27-30 May 2001. (pp. 73-74).
  20. D. BUTTARI, CHINI A., G. MENEGHESSO, E. ZANONI, B. MORAN, S. HEIKMAN, N. Q. ZHANG, L. SHEN, R. COFFIE, U.K. MISHRA. (2001). Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT’s. 11th European Heterostructure Technology Workshop. 28-30 Oct., 2001. (pp. 47-48).
  21. G. MENEGHESSO, CHINI A., A. MASCHIETTO, E. ZANONI, P. MALBERTI, M. CIAPPA. (2001). Electrostatic Discharge and Electrical Overstress on GaN/InGaN Light Emitting Diodes. 23th Electrical Overstress/Electrostatic Discharge Symposium Proc., EOS/ESD 2001. 11-13 Sept., 2001. (pp. 249-254).

2000

  1. A. FAZZI, G.U. PIGNATEL, G.F. DALLA BETTA, M. BOSCARDIN, V. VAROLI, VERZELLESI G. (2000). Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 47(3), pp. 829-833 ISSN: 0018-9499.
  2. G.F. DALLA BETTA, VERZELLESI G., M. BOSCARDIN, G.U. PIGNATEL, L. BOSISIO, G. SONCINI. (2000). Gate-length dependence of bulk generation lifetime and surface generation velocity measurement in high-resistivity silicon using gated diodes. IEEE Int. Conf. on Microelectronic Test Structures. Monterey (California, USA), Marzo 2000. (pp. 85-89).
  3. VERZELLESI G., G.F. DALLA BETTA, G.U. PIGNATEL. (2000). Compact modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors. IEEE Nuclear Science Symposium. Lyon (France), Ottobre 2000. ISBN/ISSN: 0-7803-6506-2.
  4. VERZELLESI G., P. VANNI, F. NAVA, E. VITTONE, C. MANFREDOTTI, A. LO GIUDICE, A. CASTALDINI, A. CAVALLINI, L. POLENTA, R. NIPOTI, C. DONOLATO. (2000). Charge particle detection properties of epitaxial 4H-SiC Schottky diodes. 3rd European Conference on Silicon Carbide and Related Materials. Kloster Banz (Germany), Settembre 2000. (pp. 95).
  5. G. MENEGHESSO, R. LUISE, D. BUTTARI, CHINI A., H. YOKOYAMA, T. SUEMITSU, E. ZANONI. (2000). Parasitic effects and long term stability of InP-based HEMTs. MICROELECTRONICS RELIABILITY. vol. 40, pp. 1715-1720 ISSN: 0026-2714.
  6. BUTTARI D., CHINI A., MENEGHESSO G., ZANONI E., SAWDAI D., PAVLIDIS D., HSU S.S.H. (2000). Hole impact ionization coefficient in (100)-oriented In0.53 Ga0.47As based on pnp InAlAs/InGaAs HBTs. Indium Phosphide and Related Materials (IPRS). 14-18 May 2000. (pp. 258-261).
  7. CHINI A., G. MENEGHESSO, E. ZANONI, M. MANFREDI, M.PAVESI, B. BOUDART, C.GAQUIERE. (2000). Deep traps related effects in GaN MESFETs grown on sapphire substrate. 10th European Heterostructure Technology Workshop. 18-19 September 2000. (pp. E2 18-E2 19).
  8. D. BUTTARI, CHINI A., G. MENEGHESSO, E. ZANONI, D. SAWDAI, D.PAVLIDIS, S.S.H. HSU. (2000). Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs. International Conference on Indium Phosphide and Related Materials. 14-18 May 2000. (pp. 258-261).
  9. G. MENEGHESSO, R. LUISE, CHINI A., D. BUTTARI, H. YOKOYAMA, T. SUEMITSU, E. ZANONI. (2000). Characterization and reliability of InP-based HEMTs implemented with different process options. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits. May 29 - June 02, 2000. (pp. XI 3-XI 4).
  10. G. MENEGHESSO, R. LUISE, D. BUTTARI, CHINI A., H. YOKOYAMA, T. SUEMITSU, E. ZANONI. (2000). Parasitic effects and long term stability of InP-based HEMTs. 11th European Symposium on Reliability of Electron Devices, Failure Physics and. 2-6 Oct. 2000.
  11. MENEGHESSO G., CHINI A., ZANONI E., MANFREDI M., PAVESI M., BOUDART B., GAQUIERE C. (2000). Diagnosis of trapping phenomena in GaN MESFETs. International Electron Devices Meeting (IEDM). 10-13 Dec. 2000. (pp. 389-392).

1999

  1. BELLUTTI P., VERZELLESI G. (1999). Gate oxide reliability improvement related to dry local oxidation of silicon. MICROELECTRONICS RELIABILITY. vol. 39(2), pp. 181-185 ISSN: 0026-2714.
  2. M. DA ROLD, N. BACCHETTA, D. BISELLO, A. PACCAGNELLA, G.F. DALLA BETTA, VERZELLESI G., O. MILITARU, R. WHEADON, P.G. FUOCHI, C. BOZZI, R. DELL'ORSO, A. MESSINEO, G. TONELLI, P.G. VERDINI. (1999). Study of breakdown effects in silicon multiguard structures. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 46(4), pp. 1215-1223 ISSN: 0018-9499.
  3. VERZELLESI G., DALLA BETTA G.-F., PIGNATEL G.U., SONCINI G. (1999). Two-dimensional numerical simulation of edge-generated currents in type-inverted, single-sided silicon microstrip detectors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 46(4), pp. 1253-1257 ISSN: 0018-9499.
  4. VERZELLESI G., G.F. DALLA BETTA, L. BOSISIO, M. BOSCARDIN, G.U. PIGNATEL, G. SONCINI. (1999). On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 46(4), pp. 817-820 ISSN: 0018-9383.
  5. A. FAZZI, G.U. PIGNATEL, G.F. DALLA BETTA, M. BOSCARDIN, V. VAROLI, VERZELLESI G. (1999). Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET. IEEE Nuclear Science Symposium. Seattle (Washington, USA), Ottobre 1999. ISBN/ISSN: 0-7803-5699-3.
  6. D. GIUSTI, VERZELLESI G., G.U. PIGNATEL. (1999). Thermo-mechanical analysis of microstructures for chemoresistive gas sensors. 5th International Workshop on Thermal Investigations of ICs and Microstructures. Roma, Ottobre 1999. (pp. 365-369).
  7. S. BRIDA, L. FERRARIO, F. GIACOMOZZI, D. GIUSTI, V. GUARNIERI, B. MARGESIN, G.U. PIGNATEL, G. SONCINI, A. VASILIEV, VERZELLESI G., M. ZEN. (1999). High field and low temperature behaviour of Lely-grown 6H SiC buried gate JFETs. 2nd Symposium on Design, Test, and Microfabrication of MEMS/MOEMS, Paris. Marzo-Aprile 1999. (vol. SPIE Proc. Series vol. 3680, pp. 964-968).
  8. S. BRIDA, L. FERRARIO, V. GUARNIERI, F. GIACOMOZZI, B. MARGESIN, M. PARANJAPE, VERZELLESI G., M. ZEN. (1999). Optimization of TMAH etching for MEMS fabrication. 2nd Symposium on Design, Test, and Microfabrication of MEMS/MOEMS, Paris. Marzo-Aprile 1999. (vol. vol. 3680(SPIE Proc. Series), pp. 969-976).
  9. VERZELLESI G., G.F. DALLA BETTA, M. DA ROLD, G.U. PIGNATEL, A. PACCAGNELLA, L. BOSISIO. (1999). Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion. IEEE Nuclear Science Symposium. Seattle (Washington, USA), Ottobre 1999. ISBN/ISSN: 0-7803-5699-3.

1998

  1. DALLA BETTA G.-F., PIGNATEL G.U., VERZELLESI G., BELLUTTI P., BOSCARDIN M., FERRARIO L., ZORZI N., MAGLIONE A. (1998). Design and optimisation of an npn bipolar phototransistor for optical position encoders. MICROELECTRONICS JOURNAL. vol. 29(1-2), pp. 49-58 ISSN: 0959-8324.
  2. G. MENEGHESSO, A. BARTOLINI, VERZELLESI G., A. CAVALLINI, A. CASTALDINI, C. CANALI, E. ZANONI. (1998). Breakdown and low-temperature anomalous effects in 6H SiC JFETs. IEEE International Electron Devices Meeting (IEDM98). S. Francisco (California, USA), Dec. 1998. (pp. 695-698).

1997

  1. L. COLALONGO, VERZELLESI G., D. PASSERI, A. LUI, P. CIAMPOLINI, M. RUDAN. (1997). Modelling of Light-Addressable Potentiometric Sensors. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 44(11), pp. 2083-2091 ISSN: 0018-9383.

1996

  1. VERZELLESI G., DAL FABBRO A., PAVAN P., VENDRAME L., ZABOTTO E., ZANINI A., CHANTRE A., ZANONI E. (1996). SPICE modeling of impact ionisation effects in silicon bipolar transistors. IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS. vol. 143(1), pp. 33-40 ISSN: 1350-2409.

1995

  1. J.B. SHEALY, W.-N. JIANG, P.A. PARIKH, VERZELLESI G., U.K. MISHRA. (1995). Junction heterostructures for high performance electronics. SOLID-STATE ELECTRONICS. vol. vol. 38(9), pp. 1607-1610 ISSN: 0038-1101.
  2. L. VENDRAME, E. ZABOTTO, A. DAL FABBRO, A. ZANINI, VERZELLESI G., E. ZANONI, A. CHANTRE, P. PAVAN. (1995). Influence of impact-ionization-induced base current reversal on bipolar transistor parameters. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 42(9), pp. 1636-1646 ISSN: 0018-9383.

1993

  1. E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1993). Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs. IEEE ELECTRON DEVICE LETTERS. vol. 14(2), pp. 69-71 ISSN: 0741-3106.
  2. VERZELLESI G., BACCARANI G., CANALI C., PAVAN P., VENDRAME L., ZANONI E. (1993). Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 40(12), pp. 2296-2300 ISSN: 0018-9383.
  3. VERZELLESI G., R. TURETTA, P. PAVAN, A. COLLINI, A. CHANTRE, A. MARTY, C. CANALI, E. ZANONI. (1993). Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal. IEEE ELECTRON DEVICE LETTERS. vol. 14(9), pp. 431-434 ISSN: 0741-3106.
  4. VERZELLESI G., P. PAVAN, E. ZANONI, C. CANALI. (1993). Impact-ionization effects in advanced Si bipolar transistors. In: G. BACCARANI. Process and Device Modeling for Microelectronics. (pp. 269-324). : Elsevier Science Publishers B.V.

1992

  1. E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1992). Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 927-930).
  2. VERZELLESI G., L. VENDRAME, R. TURETTA, P. PAVAN, A. CHANTRE, A. MARTY, M. CAVONE, R. RIVOIR, E. ZANONI. (1992). A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 413-416).