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Project summary and keywords
This research activity originates from the idea “Hyper-frequencies for integrated electronic systems: development of qualifying technologies for electronic reconfigurable wideband components strategic program”, referring to the 11.ICT and electronic components strategic program, approved as DM 9.2.2006.
The proposal has the aim of investigating a certain number of issues, in tight cooperation with the corresponding industrial program, which will allow to develop highly innovative systems comparable to international standards in the field of telecommunication systems, wideband sensors and smart Microsystems. In particular, each group’s specific proficiency will allow to obtain the following goals:
- availability of PHEMT/MHEMT GaAs technology (critical lithography 0.15 μm) for low noise receiver components
- availability of GaN technology (critical lithography 0.15 μm) for high power receiver components
- availability Availability of GaN technology (critical lithography 0.15 μm) for high power receiver components
- availability of GaAs, GaN/SiC and ceramic materials MEMS technology
- availability of RF devices characterization and modeling techniques
- circuital design techniques for realizing analog and MEMS devices
The research project, whose length is 36 months, has been divided in the following three research lines:
- Enabling technologies
- RF MEMS
- Characterization and modeling techniques
Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).
Line 1 WP1.1: Development of a PHEMT GaAs technology (critical lithography 0.15 μm) for low noise receiver components and relative demonstrators WP1.2: Development of a GaN technology (critical lithography 0.15 μm) for high power components and relative demonstrators WP1.3: Development of technologies for the realization of S.I. SiC substrates.
Line 2 WP2.1: Development of GaAs and GaN MEMS and relative demonstrators WP2.2: Development of ceramic material based MEMS and relative demonstrators WP2.3: Design techniques for realizing RF MEMS devices
Line 3 WP3.1: Development of characterization and modeling techniques for active devices WP3.2: Development of characterization and modeling techniques for RF MEMS devices WP3.3: Design techniques for realizing active analog subsystems
Descrizione della Ricerca eseguita e dei risultati ottenuti