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Compound Semiconductors such as Gallium Nitride (GaN), Gallium Arsenide (GaAs) and Indium Phosphide (InP) represent the current and future solution for all the applications where high output RF power is involved. | Compound Semiconductors such as Gallium Nitride (GaN), Gallium Arsenide (GaAs) and Indium Phosphide (InP) represent the current and future solution for all the applications where high output RF power is involved. | ||
== '''Teaching Activity'''== | == '''Teaching Activity'''== | ||
Revision as of 14:44, 9 May 2008
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WORK IN PROGRESS!
Research Activity
The research activity of the PowDeR (Power devices, Detectors and Reliability) Group is focused on the characterization, numerical simulation and development of power devices for RF application, such as GaAs pHEMTs and GaN HEMTs, Si-based detectors and their reliability.
Compound Semiconductors such as Gallium Nitride (GaN), Gallium Arsenide (GaAs) and Indium Phosphide (InP) represent the current and future solution for all the applications where high output RF power is involved.