PowDeR/Lab Capabilities: Difference between revisions
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==Measurement Systems== | ==Measurement Systems== | ||
===On wafer Continuous-Wave Load and Source Pull measurements at 2GHz=== | |||
Our Lab is equipped with a Load and Source Pull measurements sistem based on a PAF Dragon Switch-Box, an Agilent Vector Network Analyzer and two manual Maury Microwave tuners. Currently we are able to measure On-Wafer Continuous Wave RF performance at 2GHz but the system can easily be extended up to 12GHz. The system is also used for short term Reliability RF Stress test since it is equipped with a Thermal Chuck that allows to test the devices up to 200°C. | Our Lab is equipped with a Load and Source Pull measurements sistem based on a PAF Dragon Switch-Box, an Agilent Vector Network Analyzer and two manual Maury Microwave tuners. Currently we are able to measure On-Wafer Continuous Wave RF performance at 2GHz but the system can easily be extended up to 12GHz. The system is also used for short term Reliability RF Stress test since it is equipped with a Thermal Chuck that allows to test the devices up to 200°C. | ||
[[Image:powder_loadpull1.jpg|800px|center|]]< | [[Image:powder_loadpull1.jpg|800px|center|]]<div style="clear:both;"></div> | ||
===Pulsed I-V measurements down to 80ns=== | |||
Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions allows to quantify the amount of trapping phenomena in the device. | |||
===Current Deep Level Transient Spectroscopy measurements=== | |||
==Measurement Instruments== | ==Measurement Instruments== | ||
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[[Image:PowDeR_N5230Alarge.jpg|300px|left|]] | [[Image:PowDeR_N5230Alarge.jpg|300px|left|]] | ||
'''Agilent N5230A PNA-L Network Analyzer, 2-ports, up to 13.5 GHz'''<br> | '''Agilent N5230A PNA-L Network Analyzer, 2-ports, up to 13.5 GHz'''<br> | ||
[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=61114&lc=eng&cc=US&nfr=-536902643.536883638.08 Quick Reference Guide]< | [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=61114&lc=eng&cc=US&nfr=-536902643.536883638.08 Quick Reference Guide]<div style="clear:both;"></div> | ||
[[Image:PowDeR_E4418B-lg.jpg|300px|left|]] | [[Image:PowDeR_E4418B-lg.jpg|300px|left|]] | ||
'''E4418B EPM Series Single-Channel Power Meter'''<br> | '''E4418B EPM Series Single-Channel Power Meter'''<br> | ||
[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032<ype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ] | [http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032<ype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ] | ||
[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029<ype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]< | [http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029<ype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<div style="clear:both;"></div> | ||
[[Image:PowDeR_hp_33250A_800.jpg|300px|left|]] | [[Image:PowDeR_hp_33250A_800.jpg|300px|left|]] | ||
'''Agilent 33250A Function / Arbitrary Waveform Generator, 80 MHz'''<br> | '''Agilent 33250A Function / Arbitrary Waveform Generator, 80 MHz'''<br> | ||
[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237965&lc=eng&cc=US&nfr=-536902257.536881980.07 Quick Reference Guide] [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237975&lc=eng&cc=US&nfr=-536902257.536881980.07 User's Guide]< | [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237965&lc=eng&cc=US&nfr=-536902257.536881980.07 Quick Reference Guide] [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237975&lc=eng&cc=US&nfr=-536902257.536881980.07 User's Guide]<div style="clear:both;"></div> | ||
[[Image:PowDeR_BR_8114A_white.jpg|300px|left|]] | [[Image:PowDeR_BR_8114A_white.jpg|300px|left|]] | ||
'''Agilent 8114A High Power Pulse Generator, 100 V / 2 A'''<br> | '''Agilent 8114A High Power Pulse Generator, 100 V / 2 A'''<br> | ||
[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&cc=US&lc=eng&ckey=410642&nid=-536902258.536881953.07&pid=1000001735%3Aepsg%3Apro 8114A Pulse Generator User Guide]< | [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&cc=US&lc=eng&ckey=410642&nid=-536902258.536881953.07&pid=1000001735%3Aepsg%3Apro 8114A Pulse Generator User Guide]<div style="clear:both;"></div> | ||
Latest revision as of 11:58, 20 May 2008
Home - Projects - Publications - Staff - Lab Capabilities - Thesis
Measurement Systems
On wafer Continuous-Wave Load and Source Pull measurements at 2GHz
Our Lab is equipped with a Load and Source Pull measurements sistem based on a PAF Dragon Switch-Box, an Agilent Vector Network Analyzer and two manual Maury Microwave tuners. Currently we are able to measure On-Wafer Continuous Wave RF performance at 2GHz but the system can easily be extended up to 12GHz. The system is also used for short term Reliability RF Stress test since it is equipped with a Thermal Chuck that allows to test the devices up to 200°C.
Pulsed I-V measurements down to 80ns
Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions allows to quantify the amount of trapping phenomena in the device.
Current Deep Level Transient Spectroscopy measurements
Measurement Instruments
Agilent N5230A PNA-L Network Analyzer, 2-ports, up to 13.5 GHz
E4418B EPM Series Single-Channel Power Meter
E4418B RF Power Meter User's Guide
EPM RF Power Meter Programming Guide
Agilent 33250A Function / Arbitrary Waveform Generator, 80 MHz
Quick Reference Guide User's Guide
Agilent 8114A High Power Pulse Generator, 100 V / 2 A