Luca Morassi: Difference between revisions

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List of publications and papers in international conferences:
List of publications in journals:


[J1] Padovani, A.; '''Morassi, L.'''; Raghavan, N.; Larcher, L.; Wenhu Liu; Kin Leong Pey; Bersuker, G.; , "A Physical Model for Post-Breakdown Digital Gate Current Noise," Electron Device Letters, IEEE , vol.31, no.9, pp.1032-1034, Sept. 2010


A. Padovani, '''L. Morassi''', N. Raghavan, L. Larcher, L. Wenhu, K. L. Pey, and G. Bersuker", A Physical Model for Post-Breakdown Digital Gate Current Noise", Electr. Dev. Lett., vol. 31, no. 9, pp.1032-1034, Sep. 2010.
[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode  N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011


'''L. Morassi''', L. Larcher, L. Pantisano, A. Padovani, R. Degreave, M. B. Zahid, and B. J. O'Sullivan, "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing", 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009.
[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; , “Connecting electrical and structural dielectric characteristics,International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011


G. Bersuker, D. Heh, C. D. Young, '''L. Morassi''', A. Padovani, L. Larcher, K. S. Yew, Y. C. Ong, D. S. Ang, K. L. Pey, and W. Taylor, "Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 373-378.
[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012


G. Bersuker, D. Veksler, C. D. Young, H. Park, '''L. Morassi''', A. Padovani, L. Larcher, W. Taylor, P. D. Kirsch, and R. Jammy, "Connecting electrical and structural dielectric characteristics", Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, December 13-16, 2009.
[J5] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.12, pp.3651-3654, Dec. 2012
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'''L. Morassi''', G. Verzellesi, A. Padovani, L. Larcher, P. Pavan, D. Veksler, I. Ok, and G. Bersuker, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 532-535.
List of publications in international conferences:


'''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct 18-20, 2010.
[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; , "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009


'''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok, G. Bersuker, "Interface-Trap Effects in Inversion-Type Enhancement-Mode InGaAs/ZrO2 N-Channel MOSFETs", Accepted for publication Trans. on Electr. Dev..
[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010


[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; , "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009


[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010
[C5] ''' Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Ok, I.; Bersuker, G.; , “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010
[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011
[C7] '''Morassi, L.'''; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011
[C8] '''Morassi, L.'''; Veksler, D.; Bersuker, G.; Verzellesi, G.; , "Generalized High-Low frequency CV technique for interface-trap characterization at III-V/high-k interface," 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), Porquerolles, France, May 30 - Jun 1, 2012
[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012
[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012
[C11] '''Morassi, L.'''; Veksler, D.; Bersuker, G.; Verzellesi, G.; , " Interface-trap characterization at III-V/high-k interface: a fast and generalized method based on High-Low frequency CV," 21st European Workshop on Heterostructure Technology (HETECH), Barcelona, Spain, Nov 5-7, 2012
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Scientific activities:
Scientific activities:


Participation at the conference: IEEE International Reliability Physics Symposium (IRPS 2010); presentation of the work [C4]. 


Participation at the conference: IEEE International Reliability Physics Symposium; oral presentaion of the work:
Participation at the conference: European Workshop on Heterostructure Technology (HETECH 2010); presentation of the work [C5].
 
'''L. Morassi''', G. Verzellesi, A. Padovani, L. Larcher, P. Pavan, D. Veksler, I. Ok, and G. Bersuker, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 532-535.


Participation at the conference: European Workshop on Heterostructure Technology; oral presentaion of the work:
Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].


'''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct 18-20, 2010.
Participation at the conference: 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC): presentation of the works [C8].





Latest revision as of 09:38, 27 November 2012

MyPic.JPG

Ph.D. Student

Course: Electronics and Telecommunications


Brief CV:

Luca Morassi was born in Mirandola (Mo), Italy, on September 15th, 1982.

From July 2008 to February 2009 he was in IMEC (Interuniversity MicroElectronics Centre, Leuven, Belgium) for an internship; during this period he worked on the characterization of High-k-based composed stack for MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) gate oxide. In 2009 he received his academic master degree in Electronic Engineering from University of Modena e Reggio Emilia, Italy - Topic: "Characterization and Simulation of High-k Dielectrics for Innovative Non-Volatile Memories". During 2009 he collaborated with University of Modena and Reggio Emilia with a research activity focused on the electrical characterization of high-k material for Non-Volatile Memory (NVM) devices. Since 2010 he is a PhD student at ICT Electronics & Telecommunications Doctorate School, Modena, Italy with a research activity based on III-V compound semiconductor. His main research field is the characterization of InGaAs-channel MOSFETs and MOSHEMTs (Metal Oxide Semiconductor High Electron Mobilty Transistors) for high power and logic applications.



List of publications in journals:

[J1] Padovani, A.; Morassi, L.; Raghavan, N.; Larcher, L.; Wenhu Liu; Kin Leong Pey; Bersuker, G.; , "A Physical Model for Post-Breakdown Digital Gate Current Noise," Electron Device Letters, IEEE , vol.31, no.9, pp.1032-1034, Sept. 2010

[J2] Morassi, L.; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011

[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; Morassi, L.; Padovani, A.; Larcher, L.; , “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011

[J4] Morassi, L.; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012

[J5] Morassi, L.; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.12, pp.3651-3654, Dec. 2012


List of publications in international conferences:

[C1] Morassi, L.; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; , "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009

[C2] Bersuker, G.; Heh, D.; Young, C.D.; Morassi, L.; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010

[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; Morassi, L.; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; , "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009

[C4] Morassi, L.; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010

[C5] Morassi, L.; Padovani, A.; Verzellesi, G.; Veksler, D.; Ok, I.; Bersuker, G.; , “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010

[C6] Morassi, L.; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

[C7] Morassi, L.; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

[C8] Morassi, L.; Veksler, D.; Bersuker, G.; Verzellesi, G.; , "Generalized High-Low frequency CV technique for interface-trap characterization at III-V/high-k interface," 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), Porquerolles, France, May 30 - Jun 1, 2012

[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; Morassi, L.; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012

[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; Morassi, L.; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012

[C11] Morassi, L.; Veksler, D.; Bersuker, G.; Verzellesi, G.; , " Interface-trap characterization at III-V/high-k interface: a fast and generalized method based on High-Low frequency CV," 21st European Workshop on Heterostructure Technology (HETECH), Barcelona, Spain, Nov 5-7, 2012


Scientific activities:

Participation at the conference: IEEE International Reliability Physics Symposium (IRPS 2010); presentation of the work [C4].

Participation at the conference: European Workshop on Heterostructure Technology (HETECH 2010); presentation of the work [C5].

Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].

Participation at the conference: 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC): presentation of the works [C8].



DISMI - Dipartimento di Scienze e Metodi dell'Ingegneria

Università di Modena e Reggio Emilia

Pad. Tamburini - Via Amendola 2

42122, Reggio Emilia


mail: luca.morassi@unimore.it

Tel: +39-0522522638

Fax: +39-0522522609

Cell: +39-3381468756