Luca Morassi: Difference between revisions
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List of publications | List of publications in journals: | ||
[J1] A. Padovani, '''L. Morassi''', N. Raghavan, L. Larcher, L. Wenhu, K. L. Pey, and G. Bersuker, "A Physical Model for Post-Breakdown Digital Gate Current Noise", IEEE Electron Device Letters, vol. 31, no. 9, pp.1032-1034, Sep. 2010. | |||
[J2] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok, G. Bersuker, "Interface-Trap Effects in Inversion-Type Enhancement-Mode InGaAs/ZrO2 N-Channel MOSFETs", IEEE Transactions on Electron Devices, vol. 58, no. 1, pp.107-114, Jan. 2011. | |||
'''L. Morassi''' | [J3] G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R, Jammy, '''L. Morassi''', A. Padovani, and L. Larcher, “Connecting electrical and structural dielectric characteristics”, International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011. | ||
List of publications in international conferences: | |||
[C1] '''L. Morassi''', L. Larcher, L. Pantisano, A. Padovani, R. Degreave, M. B. Zahid, and B. J. O'Sullivan, "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing", 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009. | |||
'''L. Morassi''' | [C2] G. Bersuker, D. Heh, C. D. Young, '''L. Morassi''', A. Padovani, L. Larcher, K. S. Yew, Y. C. Ong, D. S. Ang, K. L. Pey, and W. Taylor, "Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 373-378. | ||
'''L. Morassi''', A. Padovani, | [C3] G. Bersuker, D. Veksler, C. D. Young, H. Park, '''L. Morassi''', A. Padovani, L. Larcher, W. Taylor, P. D. Kirsch, and R. Jammy, "Connecting electrical and structural dielectric characteristics", Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009. | ||
'''L. Morassi''', A. Padovani, | [C4] '''L. Morassi''', G. Verzellesi, A. Padovani, L. Larcher, P. Pavan, D. Veksler, I. Ok, and G. Bersuker, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 532-535. | ||
G. | [C5] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010. | ||
[C6] '''L. Morassi''', G. Verzellesi, P. Pavan, D. Veksler, I. Ok, H. Zhao, J. C. Lee and G. Bersuker, “Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric”, 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011), Berlin, Germany, May 22-26, 2011, pp. 103-105. | |||
[C7] '''L. Morassi''', G. Verzellesi, P. Pavan, I. Ok, H. Zhao and J. C. Lee, “Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs”, 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011), Berlin, Germany, May 22-26, 2011, pp. 327-329. | |||
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Participation at the conference: IEEE International Reliability Physics Symposium; | Participation at the conference: IEEE International Reliability Physics Symposium (IRPS 2010); presentation of the work [C4]. | ||
Participation at the conference: European Workshop on Heterostructure Technology; | Participation at the conference: European Workshop on Heterostructure Technology (HETECH 2010); presentation of the work [C5]. | ||
Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7]. | |||
Revision as of 10:34, 1 June 2011
Ph.D. Student
Course: Electronics and Telecommunications
Brief CV:
Luca Morassi was born in Mirandola (Mo), Italy, on September 15th, 1982.
From July 2008 to February 2009 he was in IMEC (Interuniversity MicroElectronics Centre, Leuven, Belgium) for an internship; during this period he worked on the characterization of High-k-based composed stack for MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) gate oxide. In 2009 he received his academic master degree in Electronic Engineering from University of Modena e Reggio Emilia, Italy - Topic: "Characterization and Simulation of High-k Dielectrics for Innovative Non-Volatile Memories". During 2009 he collaborated with University of Modena and Reggio Emilia with a research activity focused on the electrical characterization of high-k material for Non-Volatile Memory (NVM) devices. Since 2010 he is a PhD student at ICT Electronics & Telecommunications Doctorate School, Modena, Italy with a research activity based on III-V compound semiconductor. His main research field is the characterization of InGaAs-channel MOSFETs and MOSHEMTs (Metal Oxide Semiconductor High Electron Mobilty Transistors) for high power and logic applications.
List of publications in journals:
[J1] A. Padovani, L. Morassi, N. Raghavan, L. Larcher, L. Wenhu, K. L. Pey, and G. Bersuker, "A Physical Model for Post-Breakdown Digital Gate Current Noise", IEEE Electron Device Letters, vol. 31, no. 9, pp.1032-1034, Sep. 2010.
[J2] L. Morassi, A. Padovani, G. Verzellesi, D. Veksler, I. Ok, G. Bersuker, "Interface-Trap Effects in Inversion-Type Enhancement-Mode InGaAs/ZrO2 N-Channel MOSFETs", IEEE Transactions on Electron Devices, vol. 58, no. 1, pp.107-114, Jan. 2011.
[J3] G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R, Jammy, L. Morassi, A. Padovani, and L. Larcher, “Connecting electrical and structural dielectric characteristics”, International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011.
List of publications in international conferences:
[C1] L. Morassi, L. Larcher, L. Pantisano, A. Padovani, R. Degreave, M. B. Zahid, and B. J. O'Sullivan, "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing", 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009.
[C2] G. Bersuker, D. Heh, C. D. Young, L. Morassi, A. Padovani, L. Larcher, K. S. Yew, Y. C. Ong, D. S. Ang, K. L. Pey, and W. Taylor, "Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 373-378.
[C3] G. Bersuker, D. Veksler, C. D. Young, H. Park, L. Morassi, A. Padovani, L. Larcher, W. Taylor, P. D. Kirsch, and R. Jammy, "Connecting electrical and structural dielectric characteristics", Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009.
[C4] L. Morassi, G. Verzellesi, A. Padovani, L. Larcher, P. Pavan, D. Veksler, I. Ok, and G. Bersuker, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs", IEEE International Reliability Physics Symposium, Anaheim (CA), USA, May 2-6, 2010, pp. 532-535.
[C5] L. Morassi, A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010.
[C6] L. Morassi, G. Verzellesi, P. Pavan, D. Veksler, I. Ok, H. Zhao, J. C. Lee and G. Bersuker, “Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric”, 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011), Berlin, Germany, May 22-26, 2011, pp. 103-105.
[C7] L. Morassi, G. Verzellesi, P. Pavan, I. Ok, H. Zhao and J. C. Lee, “Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs”, 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011), Berlin, Germany, May 22-26, 2011, pp. 327-329.
Scientific activities:
Participation at the conference: IEEE International Reliability Physics Symposium (IRPS 2010); presentation of the work [C4].
Participation at the conference: European Workshop on Heterostructure Technology (HETECH 2010); presentation of the work [C5].
Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].
DISMI - Dipartimento di Scienze e Metodi dell'Ingegneria
Università di Modena e Reggio Emilia
Pad. Tamburini - Via Amendola 2
42122, Reggio Emilia
mail: luca.morassi@unimore.it
Tel: +39-0522522638
Fax: +39-0522522609
Cell: +39-3381468756