PowDeR/Publications

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Home - Projects - Publications - Staff - Lab Capabilities - Thesis

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2007

1. S. RAJAN, CHINI A., M. H. WONG, J. S. SPECK, U. K. MISHRA. (2007). N-polar GaN/AlGaN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS. vol. 102. August 2007. ISSN: 0021-8979.
2. CHINI A. (2007). GaAs vs GaN HEMT power devices. 16th European Workshop on Heterostructure Technology (HETECH). Frejus, France. September 2 – 5, 2007.
3. CHINI A., G. MENEGHESSO, E. ZANONI. (2007). Electroluminescence and Emission Spectroscopy Including Transient Phenomena in Wide Band-Gap Devices for Future THz Applications. European Microwave Week 2007. Munich, Germany. 8-12 October, 2007.
4. M. FAQIR, CHINI A., G. VERZELLESI, F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, P. KORDOS. (2007). Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
5. M. PERONI, P. ROMANINI, A. PANTELLINI, A. CETRONIO, L. MARIUCCI, A. MINOTTI, G. GHIONE, V. CAMARCHIA, E. LIMITI, A. SERINO, CHINI A. (2007). Design, Fabrication and Characterization of Gamma Gate GaN HEMT for High- Frequency/Wide-Band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
6. S. LAVANGA, C. LANZIERI, M. PERONI, P. ROMANINI, A.CETRONIO, CHINI A., L. MARIUCCI. (2007). Very High Power Field-Plate GaAs PHEMT technology for C and X -band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
7. G.-F. DALLA BETTA, G. BATIGNANI, M. BOSCARDIN, L. BOSISIO, P. GREGORI, L. PANCHERI, C. PIEMONTE, L. RATTI, VERZELLESI G., N. ZORZI. (2007). Monolithic integration of detectors and transistors on high-resistivity silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 579, pp. 658-663 ISSN: 0168-9002.
8. M. FAQIR, VERZELLESI G., F. FANTINI, F. DANESIN, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, A. CAVALLINI, A. CASTALDINI, N. LABAT, A. TOUBOUL, C. DUA. (2007). Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs. MICROELECTRONICS RELIABILITY. vol. 47, pp. 1639-1642 ISSN: 0026-2714.
9. E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384).
10. G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184).
11. M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007.
12. VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).

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2006

1. T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, S.P. DENBAARS, U.K. MISHRA. (2006). Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. pp. 562-565 ISSN: 0018-9383.
2. C. S. SHU, CHINI A., Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA. (2006). p-GaN/AlGaN/GaN Enhancement-Mode HEMTs. 64th Device Research Conference. June 2006. (pp. 163-164).
3. CHINI A., G. VERZELLESI. (2006). Off-State Breakdown Optimization in Field Plated GaAs-pHEMTs by Means of Two-Dimensional Numerical Simulation. 15th International Workshop on Heterostructure Technology HETECH 2006. Manchester. 1-4 October 2006.
4. CHINI A., G. VERZELLESI, G. MENEGHESSO, E. ZANONI. (2006). Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications. European Microwave Week 2006. Manchester. September 2006.
5. CHINI A., G. VERZELLESI, S. LAVANGA, M. PERONI, C. LANZIERI, A. CETRONIO. (2006). Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs. European Microwave Week 2006. Manchester. September 2006.
6. FAQIR M, CHINI A., VERZELLESI G, FANTINI F, RAMPAZZO F, MENEGHESSO G, ZANONI E, BERNAT J, KORDOS P. (2006). Physical Investigation of High-Field Degradation Mechanisms in GaN/AlGaN/GaN HEMTS. ROCS Workshop, 2006. [Reliability of Compound Semiconductors]. Nov. 2006.
7. M. PERONI, P. ROMANINI, C. LANZIERI, A. CETRONIO, M. CALORI, A. PASSASEO, B. POT, L. MARIUCCI, A. DI GASPARE, CHINI A. (2006). Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology. European Microwave Week 2006. Manchester. September 2006.
8. L. BOSISIO, G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, VERZELLESI G., N. ZORZI. (2006). Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 568, pp. 217-223 ISSN: 0168-9002.
9. MENEGHESSO G, RAMPAZZO F, KORDOS P, VERZELLESI G., ZANONI E. (2006). Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 53, pp. 2932-2941 ISSN: 0018-9383.
10. VERZELLESI G., D. BERGAMINI, G.-F. DALLA BETTA, C. PIEMONTE, M. BOSCARDIN, L. BOSISIO, S. BETTARINI, G. BATIGNANI. (2006). N-p-n bipolar-junction-transistor detector with integrated p-n-p biasing transistor-feasibility study, design, and first experimental results. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. vol. 21, pp. 194-200 ISSN: 0268-1242.
11. VERZELLESI G., G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE. (2006). BJT-based detector on high-resistivity silicon with integrated biasing structure. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 567, pp. 285-289 ISSN: 0168-9002.
12. M. FAQIR, A. CHINI, VERZELLESI G., F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, P. KORDOS. (2006). Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs. Reliability of Compound Semiconductor Workshop (ROCS 2006). San Antonio, TX (USA). San Antonio, TX (USA), Nov. 2006.

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2005

1. VERZELLESI G., BASILE A.F., CAVALLINI A., CASTALDINI A., CHINI A., CANALI C. (2005). Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 52, pp. 594-602 ISSN: 0018-9383.
2. VERZELLESI G., G. MENEGHESSO, A. CHINI, E. ZANONI, C. CANALI. (2005). DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. MICROELECTRONICS RELIABILITY. vol. 45, pp. 1585-1592 ISSN: 0026-2714.
3. CHINI A., M. PERONI, P. ROMANINI, C. LANZIERI, V. TEPPATI, V. CAMARCHIA, A. PASSASEO, G. VERZELLESI. (2005). Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs. 14th International Workshop on Heterostructure Technology HETECH 2005. 2-5 October 2005.
4. CHINI A., S. RAJAN, M. H. WONG, Y. FU, J. S. SPECK, U. K. MISHRA. (2005). Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs. Device Research Conference (DRC) 2005. 20-22 June 2005.
5. CHINI A., Y. FU, S. RAJAN, J. SPECK, U. K. MISHRA. (2005). An experimental method to identify bulk and surface traps in GaN HEMTs. International Symposium on Compound Semiconductors (ISCS). 18-22 September 2005.
6. G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, G. TAMIAZZO, E. ZANONI, J. BERNAT, P. KORDOS, A.F. BASILE, CHINI A., AND G. VERZELLESI. (2005). HOT ELECTRON STRESS DEGRADATION IN UNPASSIVATED GaN/AlGaN/GaN HEMTs ON SiC. International Reliability Physics Symposium (IRPS 2005).
7. G. VERZELLESI, G. MENEGHESSO, CHINI A., E. ZANONI, C. CANALI. (2005). “DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues”. 16th EUROPEAN SYMPOSIUM RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS. October 2005.
8. S. RAJAN, CHINI A., M. WONG, C. SUH, Y. FU, M. J. GRUNDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). Advanced Transistor Structures based on N-face GaN. International Symposium on Compound Semiconductors. 18-22 September 2005.
9. S. RAJAN, CHINI A., M. WONG, Y. FU, M. GRUDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). N-face AlGaN/GaN modulation-doped field effect transistors. International Conference on Nitride Semiconductors. August 28 - September 2, 2005.
10. G. BERTUCCIO, S. BINETTI, S. CACCIA, R. CASIRAGHI, A. CASTALDINI, A. CAVALLINI, C. LANZIERI, A. LE DONNE, F. NAVA, S. PIZZINI, L. RIGUTTI, VERZELLESI G., E. VITTONE. (2005). Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors. MATERIALS SCIENCE FORUM. vol. 483, pp. 1015-1019 ISSN: 0255-5476.

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2004

1. VERZELLESI G., A. CAVALLINI, A.F. BASILE, A. CASTALDINI, C. CANALI. (2004). The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs. IEEE ELECTRON DEVICE LETTERS. vol. 25(8), pp. 517-519 ISSN: 0741-3106.
2. MENEGHESSO G., VERZELLESI G., PIEROBON R., RAMPAZZO F., CHINI A., MISHRA U.K., CANALI C., ZANONI E. (2004). Surface-related drain current dispersion effects in AlGaN-GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 51, pp. 1554-1561 ISSN: 0018-9383.
3. CHINI A., BUTTARI D., COFFIE R., HEIKMAN S., KELLER S., MISHRA U.K. (2004). 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate. ELECTRONICS LETTERS. vol. 40, pp. 73-74 ISSN: 0013-5194.
4. CHINI A., BUTTARI D., COFFIE R., SHEN L., HEIKMAN S., CHAKRABORTY A., KELLER S., MISHRA U.K. (2004). Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 229-231 ISSN: 0741-3106.
5. CHINI A., WITTICH J., HEIKMAN S., KELLER S., DENBAARS S.P., MISHRA U.K. (2004). Power and linearity characteristics of GaN MISFETs on sapphire substrate. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 55-57 ISSN: 0741-3106.
6. HUILI XING, DORA Y., CHINI A., HEIKMAN S., KELLER S., MISHRA U.K. (2004). High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 161-163 ISSN: 0741-3106.
7. L. SHEN, R. COFFIE, D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, CHINI A., S. KELLER, S.P. DENBAARS, AND U.K. MISHRA. (2004). Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design. JOURNAL OF ELECTRONIC MATERIALS. pp. 422-425 ISSN: 0361-5235.
8. SHEN L., COFFIE R., BUTTARI D., HEIKMAN S., CHAKRABORTY A., CHINI A., KELLER S., DENBAARS S.P., MISHRA U.K. (2004). High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation. IEEE ELECTRON DEVICE LETTERS. vol. 25, pp. 7-9 ISSN: 0741-3106.
9. XU H., SANABRIA C., CHINI A., KELLER S., MISHRA U.K., YORK R.A. (2004). A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. vol. 14, pp. 262-264 ISSN: 1531-1309.
10. CHINI A., D. BUTTARI, R. COFFIE, L. SHEN, T. PALACIOS, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, U. K. MISHRA. (2004). Effect of Gate Recessing on Linearity Characteristics of AlGaN/Gan HEMTs. Device Research Conference. 21-23 June 2004. (pp. 33-34).
11. D. BUTTARI, CHINI A., A. CHAKRABORTY, L. MCCARTHY, H. XING, T. PALACIOS, L. SHEN, S. KELLER, U.K. MISHRA. (2004). Selective Dry Etching of GaN over AlGaN in BCl3/SF6 Mixtures. IEEE Lester Eastman Conference on High Performance Devices. August 4-6, 2004.
12. H. XU, C. SANABRIA, CHINI A., Y., WEI, S. HEIKMAN, S. KELLER, U.K. MISHRA, R.A. YORK. (2004). A New Field Plate GaN HEMT Structure with Improved Power & Noise Performance. IEEE Lester Eastman Conference on High Performance Devices. August 4-6, 2004.
13. L. SHEN, D. BUTTARI, S. HEIKMAN, CHINI A., R. COFFIE, L. MCCARTHY, A. CHAKRABORTY, S. KELLER, S. P. DENBAARS, U. K. MISHRA. (2004). Improved high power thick-GaN-capped AlGaN/GaN HEMTs wothout surface passivation. Device Research Conference. 21-23 June 2004. (pp. 39-40).
14. S. RAJAN, H. XING, A. CHAKRABORTY, CHINI A., M. J. GRUNDMANN, T. PALACIOS, S. P. DENBAARS, D. JENA, U. K. MISHRA. (2004). Tailoring of Trasconductance Profile for Improved Linearity in AlGaN/GaN Polarization-Doped Field Effect Transistors. International Workshop on Nitride Semiconductors. July 19 - 23, 2004.
15. S. XIE, V. PAIDI, S. HEIKMAN, CHINI A., U. MISHRA, S. LONG, M. J. W. RODWELL. (2004). High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode. IEEE Lester Eastman Conference on High Performance Devices. August 4-6, 2004.
16. T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, S. KELLER, S. P. DENBAARS, U. K. MISHRA. (2004). Use of Multichannel Heterostructures to Improve the Access Resistance and ft Linearity in GaN-based HEMTs. Device Research Conference. 21-23 June 2004. (pp. 41-42).
17. A. BASILE, VERZELLESI G., C. CANALI, A. CAVALLINI, A. CASTALDINI, C. LANZIERI. (2004). Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs. 13th European Workshop on Heterostructure Technology (HETECH’04). Koutouloufari (Creta), Oct. 2004.
18. A. SLEIMAN, A. DI CARLO, P. LUGLI, VERZELLESI G., G. MENEGHESSO, E. ZANONI. (2004). Current collapse associated with surface states in GaN-based HEMT’s. Theoretical/experimental investigations. IEEE International Conference on Simulation of Semiconductor Processes and Devices. Munich (Germany), Sept. 2004.
19. E. ZANONI, G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, A. CHINI, VERZELLESI G. (2004). Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs. European Microwave Week, Workshop Proceedings, GAAS WS 2.
20. R. PIEROBON, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, M. MARSO, P. KORDOS, A. BASILE, VERZELLESI G. (2004). Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs. 13th European Workshop on Heterostructure Technology (HETECH’04). Koutouloufari (Crete, Greece), Ottobre 2004.