Valerio Di Lecce
Ing. Valerio Di Lecce
Ph.D. Student, 24th Cycle
Department of Information Engineering
University of Modena and Reggio Emilia
Strada Vignolese 905, I–41125 Modena MO, ITALY
Phone: +39 059 2056191
e-mail: valerio.dilecce@unimore.it
Publications
Journals:
[J1] A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30 no. 10, Oct. 2009, pp. 1021–1023
Conferences and Workshops:
[C9] A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Devices Meeting—IEDM 2009, Baltimore MD (USA), Dec. 2009
[C8] D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany), Nov. 2009
[C7] M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany), Nov. 2009
[C6] V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany), Nov. 2009
[C5] G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductors—ICNS-8 2009, Jeju (South Korea), Oct. 2009
[C4] A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", European Microwave Week—EuMW 2009, Rome (Italy), Sep. 2009
[C3] M. Esposto, V. Di Lecce, A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference—ESSDERC 2009, Athens (Greece), Sep. 2009
[C2] E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", 36th International Symposium on Compound Semiconductors—ISCS 2009, Santa Barbara CA (USA), Sep. 2009
[C1] A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", 17th European Heterostructure Technology Workshop—HeTech 2008, Venice (Italy), Nov. 2008
