Difference between revisions of "Valerio Di Lecce"
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Strada Vignolese 905, I–41125 Modena MO, ITALY | Strada Vignolese 905, I–41125 Modena MO, ITALY | ||
| − | + | Tel: +39 059 2056191 | |
e-mail: valerio.dilecce@unimore.it | e-mail: valerio.dilecce@unimore.it | ||
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== Scientific publications == | == Scientific publications == | ||
Revision as of 18:19, 4 January 2010
Ing. Valerio Di Lecce
PhD Student, 24th Cycle
Department of Information Engineering
University of Modena and Reggio Emilia
Strada Vignolese 905, I–41125 Modena MO, ITALY
Tel: +39 059 2056191
e-mail: valerio.dilecce@unimore.it
Scientific publications
Journals:
A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30 No. 10, Oct. 2009
Conferences and Workshops:
E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", 36th International Symposium on Compound Semiconductors—ISCS 2009, Santa Barbara CA (USA)
M. Esposto, V. Di Lecce, A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference—ESSDERC 2009, Athens (Greece)
A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", European Microwave Week—EuMW 2009, Rome (Italy)
G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductors—ICNS-8 2009, Jeju (South Korea)
V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany)
M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany)
A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Devices Meeting—IEDM 2009, Baltimore MD (USA)
