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2007

  1. S. RAJAN, CHINI A., M. H. WONG, J. S. SPECK, U. K. MISHRA. (2007). N-polar GaN/AlGaN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS. vol. 102. August 2007. ISSN: 0021-8979.
  2. CHINI A. (2007). GaAs vs GaN HEMT power devices. 16th European Workshop on Heterostructure Technology (HETECH). Frejus, France. September 2 – 5, 2007.
  3. CHINI A., G. MENEGHESSO, E. ZANONI. (2007). Electroluminescence and Emission Spectroscopy Including Transient Phenomena in Wide Band-Gap Devices for Future THz Applications. European Microwave Week 2007. Munich, Germany. 8-12 October, 2007.
  4. M. FAQIR, CHINI A., G. VERZELLESI, F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, P. KORDOS. (2007). Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
  5. M. PERONI, P. ROMANINI, A. PANTELLINI, A. CETRONIO, L. MARIUCCI, A. MINOTTI, G. GHIONE, V. CAMARCHIA, E. LIMITI, A. SERINO, CHINI A. (2007). Design, Fabrication and Characterization of Gamma Gate GaN HEMT for High- Frequency/Wide-Band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
  6. S. LAVANGA, C. LANZIERI, M. PERONI, P. ROMANINI, A.CETRONIO, CHINI A., L. MARIUCCI. (2007). Very High Power Field-Plate GaAs PHEMT technology for C and X -band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
  7. G.-F. DALLA BETTA, G. BATIGNANI, M. BOSCARDIN, L. BOSISIO, P. GREGORI, L. PANCHERI, C. PIEMONTE, L. RATTI, VERZELLESI G., N. ZORZI. (2007). Monolithic integration of detectors and transistors on high-resistivity silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 579, pp. 658-663 ISSN: 0168-9002.
  8. M. FAQIR, VERZELLESI G., F. FANTINI, F. DANESIN, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, A. CAVALLINI, A. CASTALDINI, N. LABAT, A. TOUBOUL, C. DUA. (2007). Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs. MICROELECTRONICS RELIABILITY. vol. 47, pp. 1639-1642 ISSN: 0026-2714.
  9. E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384).
  10. G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184).
  11. M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007.
  12. VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).

2006

  1. T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, S.P. DENBAARS, U.K. MISHRA. (2006). Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. pp. 562-565 ISSN: 0018-9383.
  2. C. S. SHU, CHINI A., Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA. (2006). p-GaN/AlGaN/GaN Enhancement-Mode HEMTs. 64th Device Research Conference. June 2006. (pp. 163-164).
  3. CHINI A., G. VERZELLESI. (2006). Off-State Breakdown Optimization in Field Plated GaAs-pHEMTs by Means of Two-Dimensional Numerical Simulation. 15th International Workshop on Heterostructure Technology HETECH 2006. Manchester. 1-4 October 2006.
  4. CHINI A., G. VERZELLESI, G. MENEGHESSO, E. ZANONI. (2006). Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications. European Microwave Week 2006. Manchester. September 2006.
  5. CHINI A., G. VERZELLESI, S. LAVANGA, M. PERONI, C. LANZIERI, A. CETRONIO. (2006). Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs. European Microwave Week 2006. Manchester. September 2006.
  6. FAQIR M, CHINI A., VERZELLESI G, FANTINI F, RAMPAZZO F, MENEGHESSO G, ZANONI E, BERNAT J, KORDOS P. (2006). Physical Investigation of High-Field Degradation Mechanisms in GaN/AlGaN/GaN HEMTS. ROCS Workshop, 2006. [Reliability of Compound Semiconductors]. Nov. 2006.
  7. M. PERONI, P. ROMANINI, C. LANZIERI, A. CETRONIO, M. CALORI, A. PASSASEO, B. POT, L. MARIUCCI, A. DI GASPARE, CHINI A. (2006). Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology. European Microwave Week 2006. Manchester. September 2006.
  8. L. BOSISIO, G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, VERZELLESI G., N. ZORZI. (2006). Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 568, pp. 217-223 ISSN: 0168-9002.
  9. MENEGHESSO G, RAMPAZZO F, KORDOS P, VERZELLESI G., ZANONI E. (2006). Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 53, pp. 2932-2941 ISSN: 0018-9383.
  10. VERZELLESI G., D. BERGAMINI, G.-F. DALLA BETTA, C. PIEMONTE, M. BOSCARDIN, L. BOSISIO, S. BETTARINI, G. BATIGNANI. (2006). N-p-n bipolar-junction-transistor detector with integrated p-n-p biasing transistor-feasibility study, design, and first experimental results. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. vol. 21, pp. 194-200 ISSN: 0268-1242.
  11. VERZELLESI G., G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE. (2006). BJT-based detector on high-resistivity silicon with integrated biasing structure. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 567, pp. 285-289 ISSN: 0168-9002.
  12. M. FAQIR, A. CHINI, VERZELLESI G., F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, P. KORDOS. (2006). Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs. Reliability of Compound Semiconductor Workshop (ROCS 2006). San Antonio, TX (USA). San Antonio, TX (USA), Nov. 2006.

2005

  1. VERZELLESI G., BASILE A.F., CAVALLINI A., CASTALDINI A., CHINI A., CANALI C. (2005). Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 52, pp. 594-602 ISSN: 0018-9383.
  2. VERZELLESI G., G. MENEGHESSO, A. CHINI, E. ZANONI, C. CANALI. (2005). DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. MICROELECTRONICS RELIABILITY. vol. 45, pp. 1585-1592 ISSN: 0026-2714.
  3. CHINI A., M. PERONI, P. ROMANINI, C. LANZIERI, V. TEPPATI, V. CAMARCHIA, A. PASSASEO, G. VERZELLESI. (2005). Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs. 14th International Workshop on Heterostructure Technology HETECH 2005. 2-5 October 2005.
  4. CHINI A., S. RAJAN, M. H. WONG, Y. FU, J. S. SPECK, U. K. MISHRA. (2005). Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs. Device Research Conference (DRC) 2005. 20-22 June 2005.
  5. CHINI A., Y. FU, S. RAJAN, J. SPECK, U. K. MISHRA. (2005). An experimental method to identify bulk and surface traps in GaN HEMTs. International Symposium on Compound Semiconductors (ISCS). 18-22 September 2005.
  6. G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, G. TAMIAZZO, E. ZANONI, J. BERNAT, P. KORDOS, A.F. BASILE, CHINI A., AND G. VERZELLESI. (2005). HOT ELECTRON STRESS DEGRADATION IN UNPASSIVATED GaN/AlGaN/GaN HEMTs ON SiC. International Reliability Physics Symposium (IRPS 2005).
  7. G. VERZELLESI, G. MENEGHESSO, CHINI A., E. ZANONI, C. CANALI. (2005). “DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues”. 16th EUROPEAN SYMPOSIUM RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS. October 2005.
  8. S. RAJAN, CHINI A., M. WONG, C. SUH, Y. FU, M. J. GRUNDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). Advanced Transistor Structures based on N-face GaN. International Symposium on Compound Semiconductors. 18-22 September 2005.
  9. S. RAJAN, CHINI A., M. WONG, Y. FU, M. GRUDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). N-face AlGaN/GaN modulation-doped field effect transistors. International Conference on Nitride Semiconductors. August 28 - September 2, 2005.
  10. G. BERTUCCIO, S. BINETTI, S. CACCIA, R. CASIRAGHI, A. CASTALDINI, A. CAVALLINI, C. LANZIERI, A. LE DONNE, F. NAVA, S. PIZZINI, L. RIGUTTI, VERZELLESI G., E. VITTONE. (2005). Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors. MATERIALS SCIENCE FORUM. vol. 483, pp. 1015-1019 ISSN: 0255-5476.
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