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PowDeR/Publications - Revision history
2024-03-28T22:52:29Z
Revision history for this page on the wiki
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https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5565&oldid=prev
AChini at 13:04, 22 May 2008
2008-05-22T13:04:10Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 13:04, 22 May 2008</td>
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<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">__NOTOC__</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td></tr>
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AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5564&oldid=prev
AChini at 13:03, 22 May 2008
2008-05-22T13:03:50Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 13:03, 22 May 2008</td>
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<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;"></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">__TOC__</del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td></tr>
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AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5563&oldid=prev
AChini at 13:03, 22 May 2008
2008-05-22T13:03:22Z
<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 13:03, 22 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l139" >Line 139:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, R. LUISE, D. BUTTARI, CHINI A., H. YOKOYAMA, T. SUEMITSU, E. ZANONI. (2000). Parasitic effects and long term stability of InP-based HEMTs. 11th European Symposium on Reliability of Electron Devices, Failure Physics and. 2-6 Oct. 2000.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, R. LUISE, D. BUTTARI, CHINI A., H. YOKOYAMA, T. SUEMITSU, E. ZANONI. (2000). Parasitic effects and long term stability of InP-based HEMTs. 11th European Symposium on Reliability of Electron Devices, Failure Physics and. 2-6 Oct. 2000.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#MENEGHESSO G., CHINI A., ZANONI E., MANFREDI M., PAVESI M., BOUDART B., GAQUIERE C. (2000). Diagnosis of trapping phenomena in GaN MESFETs. International Electron Devices Meeting (IEDM). 10-13 Dec. 2000. (pp. 389-392).</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#MENEGHESSO G., CHINI A., ZANONI E., MANFREDI M., PAVESI M., BOUDART B., GAQUIERE C. (2000). Diagnosis of trapping phenomena in GaN MESFETs. International Electron Devices Meeting (IEDM). 10-13 Dec. 2000. (pp. 389-392).</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1999<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1999<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#BELLUTTI P., VERZELLESI G. (1999). Gate oxide reliability improvement related to dry local oxidation of silicon. MICROELECTRONICS RELIABILITY. vol. 39(2), pp. 181-185 ISSN: 0026-2714. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#BELLUTTI P., VERZELLESI G. (1999). Gate oxide reliability improvement related to dry local oxidation of silicon. MICROELECTRONICS RELIABILITY. vol. 39(2), pp. 181-185 ISSN: 0026-2714. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. DA ROLD, N. BACCHETTA, D. BISELLO, A. PACCAGNELLA, G.F. DALLA BETTA, VERZELLESI G., O. MILITARU, R. WHEADON, P.G. FUOCHI, C. BOZZI, R. DELL'ORSO, A. MESSINEO, G. TONELLI, P.G. VERDINI. (1999). Study of breakdown effects in silicon multiguard structures. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 46(4), pp. 1215-1223 ISSN: 0018-9499. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. DA ROLD, N. BACCHETTA, D. BISELLO, A. PACCAGNELLA, G.F. DALLA BETTA, VERZELLESI G., O. MILITARU, R. WHEADON, P.G. FUOCHI, C. BOZZI, R. DELL'ORSO, A. MESSINEO, G. TONELLI, P.G. VERDINI. (1999). Study of breakdown effects in silicon multiguard structures. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. vol. 46(4), pp. 1215-1223 ISSN: 0018-9499. </div></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l150" >Line 150:</td>
<td colspan="2" class="diff-lineno">Line 149:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. BRIDA, L. FERRARIO, V. GUARNIERI, F. GIACOMOZZI, B. MARGESIN, M. PARANJAPE, VERZELLESI G., M. ZEN. (1999). Optimization of TMAH etching for MEMS fabrication. 2nd Symposium on Design, Test, and Microfabrication of MEMS/MOEMS, Paris. Marzo-Aprile 1999. (vol. vol. 3680(SPIE Proc. Series), pp. 969-976). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. BRIDA, L. FERRARIO, V. GUARNIERI, F. GIACOMOZZI, B. MARGESIN, M. PARANJAPE, VERZELLESI G., M. ZEN. (1999). Optimization of TMAH etching for MEMS fabrication. 2nd Symposium on Design, Test, and Microfabrication of MEMS/MOEMS, Paris. Marzo-Aprile 1999. (vol. vol. 3680(SPIE Proc. Series), pp. 969-976). </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G.F. DALLA BETTA, M. DA ROLD, G.U. PIGNATEL, A. PACCAGNELLA, L. BOSISIO. (1999). Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion. IEEE Nuclear Science Symposium. Seattle (Washington, USA), Ottobre 1999. ISBN/ISSN: 0-7803-5699-3.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G.F. DALLA BETTA, M. DA ROLD, G.U. PIGNATEL, A. PACCAGNELLA, L. BOSISIO. (1999). Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion. IEEE Nuclear Science Symposium. Seattle (Washington, USA), Ottobre 1999. ISBN/ISSN: 0-7803-5699-3.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1998<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1998<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#DALLA BETTA G.-F., PIGNATEL G.U., VERZELLESI G., BELLUTTI P., BOSCARDIN M., FERRARIO L., ZORZI N., MAGLIONE A. (1998). Design and optimisation of an npn bipolar phototransistor for optical position encoders. MICROELECTRONICS JOURNAL. vol. 29(1-2), pp. 49-58 ISSN: 0959-8324. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#DALLA BETTA G.-F., PIGNATEL G.U., VERZELLESI G., BELLUTTI P., BOSCARDIN M., FERRARIO L., ZORZI N., MAGLIONE A. (1998). Design and optimisation of an npn bipolar phototransistor for optical position encoders. MICROELECTRONICS JOURNAL. vol. 29(1-2), pp. 49-58 ISSN: 0959-8324. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, A. BARTOLINI, VERZELLESI G., A. CAVALLINI, A. CASTALDINI, C. CANALI, E. ZANONI. (1998). Breakdown and low-temperature anomalous effects in 6H SiC JFETs. IEEE International Electron Devices Meeting (IEDM98). S. Francisco (California, USA), Dec. 1998. (pp. 695-698). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, A. BARTOLINI, VERZELLESI G., A. CAVALLINI, A. CASTALDINI, C. CANALI, E. ZANONI. (1998). Breakdown and low-temperature anomalous effects in 6H SiC JFETs. IEEE International Electron Devices Meeting (IEDM98). S. Francisco (California, USA), Dec. 1998. (pp. 695-698). </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1997<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1997<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#L. COLALONGO, VERZELLESI G., D. PASSERI, A. LUI, P. CIAMPOLINI, M. RUDAN. (1997). Modelling of Light-Addressable Potentiometric Sensors. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 44(11), pp. 2083-2091 ISSN: 0018-9383. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#L. COLALONGO, VERZELLESI G., D. PASSERI, A. LUI, P. CIAMPOLINI, M. RUDAN. (1997). Modelling of Light-Addressable Potentiometric Sensors. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 44(11), pp. 2083-2091 ISSN: 0018-9383. </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1996<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1996<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., DAL FABBRO A., PAVAN P., VENDRAME L., ZABOTTO E., ZANINI A., CHANTRE A., ZANONI E. (1996). SPICE modeling of impact ionisation effects in silicon bipolar transistors. IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS. vol. 143(1), pp. 33-40 ISSN: 1350-2409. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., DAL FABBRO A., PAVAN P., VENDRAME L., ZABOTTO E., ZANINI A., CHANTRE A., ZANONI E. (1996). SPICE modeling of impact ionisation effects in silicon bipolar transistors. IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS. vol. 143(1), pp. 33-40 ISSN: 1350-2409. </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1995<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1995<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#J.B. SHEALY, W.-N. JIANG, P.A. PARIKH, VERZELLESI G., U.K. MISHRA. (1995). Junction heterostructures for high performance electronics. SOLID-STATE ELECTRONICS. vol. vol. 38(9), pp. 1607-1610 ISSN: 0038-1101. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#J.B. SHEALY, W.-N. JIANG, P.A. PARIKH, VERZELLESI G., U.K. MISHRA. (1995). Junction heterostructures for high performance electronics. SOLID-STATE ELECTRONICS. vol. vol. 38(9), pp. 1607-1610 ISSN: 0038-1101. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#L. VENDRAME, E. ZABOTTO, A. DAL FABBRO, A. ZANINI, VERZELLESI G., E. ZANONI, A. CHANTRE, P. PAVAN. (1995). Influence of impact-ionization-induced base current reversal on bipolar transistor parameters. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 42(9), pp. 1636-1646 ISSN: 0018-9383.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#L. VENDRAME, E. ZABOTTO, A. DAL FABBRO, A. ZANINI, VERZELLESI G., E. ZANONI, A. CHANTRE, P. PAVAN. (1995). Influence of impact-ionization-induced base current reversal on bipolar transistor parameters. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 42(9), pp. 1636-1646 ISSN: 0018-9383.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1993<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1993<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1993). Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs. IEEE ELECTRON DEVICE LETTERS. vol. 14(2), pp. 69-71 ISSN: 0741-3106. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1993). Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs. IEEE ELECTRON DEVICE LETTERS. vol. 14(2), pp. 69-71 ISSN: 0741-3106. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., BACCARANI G., CANALI C., PAVAN P., VENDRAME L., ZANONI E. (1993). Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 40(12), pp. 2296-2300 ISSN: 0018-9383. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., BACCARANI G., CANALI C., PAVAN P., VENDRAME L., ZANONI E. (1993). Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 40(12), pp. 2296-2300 ISSN: 0018-9383. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., R. TURETTA, P. PAVAN, A. COLLINI, A. CHANTRE, A. MARTY, C. CANALI, E. ZANONI. (1993). Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal. IEEE ELECTRON DEVICE LETTERS. vol. 14(9), pp. 431-434 ISSN: 0741-3106. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., R. TURETTA, P. PAVAN, A. COLLINI, A. CHANTRE, A. MARTY, C. CANALI, E. ZANONI. (1993). Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal. IEEE ELECTRON DEVICE LETTERS. vol. 14(9), pp. 431-434 ISSN: 0741-3106. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., P. PAVAN, E. ZANONI, C. CANALI. (1993). Impact-ionization effects in advanced Si bipolar transistors. In: G. BACCARANI. Process and Device Modeling for Microelectronics. (pp. 269-324). : Elsevier Science Publishers B.V. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., P. PAVAN, E. ZANONI, C. CANALI. (1993). Impact-ionization effects in advanced Si bipolar transistors. In: G. BACCARANI. Process and Device Modeling for Microelectronics. (pp. 269-324). : Elsevier Science Publishers B.V. </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>1992<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>1992<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1992). Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 927-930). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1992). Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 927-930). </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., L. VENDRAME, R. TURETTA, P. PAVAN, A. CHANTRE, A. MARTY, M. CAVONE, R. RIVOIR, E. ZANONI. (1992). A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 413-416).</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., L. VENDRAME, R. TURETTA, P. PAVAN, A. CHANTRE, A. MARTY, M. CAVONE, R. RIVOIR, E. ZANONI. (1992). A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 413-416).</div></td></tr>
</table>
AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5562&oldid=prev
AChini at 13:00, 22 May 2008
2008-05-22T13:00:38Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 13:00, 22 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l29" >Line 29:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE. (2006). BJT-based detector on high-resistivity silicon with integrated biasing structure. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 567, pp. 285-289 ISSN: 0168-9002. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. BATIGNANI, S. BETTARINI, M. BOSCARDIN, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE. (2006). BJT-based detector on high-resistivity silicon with integrated biasing structure. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 567, pp. 285-289 ISSN: 0168-9002. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, A. CHINI, VERZELLESI G., F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, P. KORDOS. (2006). Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs. Reliability of Compound Semiconductor Workshop (ROCS 2006). San Antonio, TX (USA). San Antonio, TX (USA), Nov. 2006.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, A. CHINI, VERZELLESI G., F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, P. KORDOS. (2006). Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs. Reliability of Compound Semiconductor Workshop (ROCS 2006). San Antonio, TX (USA). San Antonio, TX (USA), Nov. 2006.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>2005<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2005<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., BASILE A.F., CAVALLINI A., CASTALDINI A., CHINI A., CANALI C. (2005). Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 52, pp. 594-602 ISSN: 0018-9383.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., BASILE A.F., CAVALLINI A., CASTALDINI A., CHINI A., CANALI C. (2005). Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 52, pp. 594-602 ISSN: 0018-9383.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. MENEGHESSO, A. CHINI, E. ZANONI, C. CANALI. (2005). DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. MICROELECTRONICS RELIABILITY. vol. 45, pp. 1585-1592 ISSN: 0026-2714. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. MENEGHESSO, A. CHINI, E. ZANONI, C. CANALI. (2005). DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. MICROELECTRONICS RELIABILITY. vol. 45, pp. 1585-1592 ISSN: 0026-2714. </div></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l41" >Line 41:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. RAJAN, CHINI A., M. WONG, Y. FU, M. GRUDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). N-face AlGaN/GaN modulation-doped field effect transistors. International Conference on Nitride Semiconductors. August 28 - September 2, 2005.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. RAJAN, CHINI A., M. WONG, Y. FU, M. GRUDMANN, F. WU, J. S. SPECK, U. K. MISHRA. (2005). N-face AlGaN/GaN modulation-doped field effect transistors. International Conference on Nitride Semiconductors. August 28 - September 2, 2005.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. BERTUCCIO, S. BINETTI, S. CACCIA, R. CASIRAGHI, A. CASTALDINI, A. CAVALLINI, C. LANZIERI, A. LE DONNE, F. NAVA, S. PIZZINI, L. RIGUTTI, VERZELLESI G., E. VITTONE. (2005). Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors. MATERIALS SCIENCE FORUM. vol. 483, pp. 1015-1019 ISSN: 0255-5476.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. BERTUCCIO, S. BINETTI, S. CACCIA, R. CASIRAGHI, A. CASTALDINI, A. CAVALLINI, C. LANZIERI, A. LE DONNE, F. NAVA, S. PIZZINI, L. RIGUTTI, VERZELLESI G., E. VITTONE. (2005). Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors. MATERIALS SCIENCE FORUM. vol. 483, pp. 1015-1019 ISSN: 0255-5476.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>2004<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2004<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., A. CAVALLINI, A.F. BASILE, A. CASTALDINI, C. CANALI. (2004). The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs. IEEE ELECTRON DEVICE LETTERS. vol. 25(8), pp. 517-519 ISSN: 0741-3106. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., A. CAVALLINI, A.F. BASILE, A. CASTALDINI, C. CANALI. (2004). The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs. IEEE ELECTRON DEVICE LETTERS. vol. 25(8), pp. 517-519 ISSN: 0741-3106. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#MENEGHESSO G., VERZELLESI G., PIEROBON R., RAMPAZZO F., CHINI A., MISHRA U.K., CANALI C., ZANONI E. (2004). Surface-related drain current dispersion effects in AlGaN-GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 51, pp. 1554-1561 ISSN: 0018-9383. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#MENEGHESSO G., VERZELLESI G., PIEROBON R., RAMPAZZO F., CHINI A., MISHRA U.K., CANALI C., ZANONI E. (2004). Surface-related drain current dispersion effects in AlGaN-GaN HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 51, pp. 1554-1561 ISSN: 0018-9383. </div></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l63" >Line 63:</td>
<td colspan="2" class="diff-lineno">Line 61:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, A. CHINI, VERZELLESI G. (2004). Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs. European Microwave Week, Workshop Proceedings, GAAS WS 2. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, G. MENEGHESSO, R. PIEROBON, F. RAMPAZZO, A. CHINI, VERZELLESI G. (2004). Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs. European Microwave Week, Workshop Proceedings, GAAS WS 2. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#R. PIEROBON, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, M. MARSO, P. KORDOS, A. BASILE, VERZELLESI G. (2004). Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs. 13th European Workshop on Heterostructure Technology (HETECH’04). Koutouloufari (Crete, Greece), Ottobre 2004.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#R. PIEROBON, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, J. BERNAT, M. MARSO, P. KORDOS, A. BASILE, VERZELLESI G. (2004). Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs. 13th European Workshop on Heterostructure Technology (HETECH’04). Koutouloufari (Crete, Greece), Ottobre 2004.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>2003<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2003<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#A. CAVALLINI, VERZELLESI G., A.F. BASILE, C. CANALI, A. CASTALDINI, E. ZANONI. (2003). Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS. vol. 94(8), pp. 5279-5301 ISSN: 0021-8979. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#A. CAVALLINI, VERZELLESI G., A.F. BASILE, C. CANALI, A. CASTALDINI, E. ZANONI. (2003). Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS. vol. 94(8), pp. 5279-5301 ISSN: 0021-8979. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#F. NAVA, E. VITTONE, P. VANNI, VERZELLESI G., P.G. FUOCHI, C. LANZIERI, M. GLASER. (2003). Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma rays. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 505, pp. 645-655 ISSN: 0168-9002. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#F. NAVA, E. VITTONE, P. VANNI, VERZELLESI G., P.G. FUOCHI, C. LANZIERI, M. GLASER. (2003). Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma rays. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 505, pp. 645-655 ISSN: 0168-9002. </div></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l86" >Line 86:</td>
<td colspan="2" class="diff-lineno">Line 83:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., A. F. BASILE, A. CAVALLINI, A. CASTALDINI, C. LANZIERI, C. CANALI. (2003). Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s. IEEE EDMO 2003. Orlando, FL (USA), Novembre 2003. (pp. 24-29). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., A. F. BASILE, A. CAVALLINI, A. CASTALDINI, C. LANZIERI, C. CANALI. (2003). Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s. IEEE EDMO 2003. Orlando, FL (USA), Novembre 2003. (pp. 24-29). </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., A. MAZZANTI, C. CANALI, G. MENEGHESSO, A. CHINI, E. ZANONI. (2003). Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs. 2003 GaAs Reliability Workshop. San Diego (California, USA), Ottobre 2003.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., A. MAZZANTI, C. CANALI, G. MENEGHESSO, A. CHINI, E. ZANONI. (2003). Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs. 2003 GaAs Reliability Workshop. San Diego (California, USA), Ottobre 2003.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>2002<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2002<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#A. MAZZANTI, VERZELLESI G., C. CANALI, G. MENEGHESSO, E. ZANONI. (2002). Physics-based explanation of kink dynamics in AlGaAs/GaAs HFET’s. IEEE ELECTRON DEVICE LETTERS. vol. 23(7), pp. 383-385 ISSN: 0741-3106. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#A. MAZZANTI, VERZELLESI G., C. CANALI, G. MENEGHESSO, E. ZANONI. (2002). Physics-based explanation of kink dynamics in AlGaAs/GaAs HFET’s. IEEE ELECTRON DEVICE LETTERS. vol. 23(7), pp. 383-385 ISSN: 0741-3106. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#A. MAZZANTI, VERZELLESI G., G. SOZZI, R. MENOZZI, C. LANZIERI, C. CANALI. (2002). Physical investigation of trap-related effects in power HFETs and their reliability implications. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. vol. 2(3), pp. 1-7 ISSN: 1530-4388. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#A. MAZZANTI, VERZELLESI G., G. SOZZI, R. MENOZZI, C. LANZIERI, C. CANALI. (2002). Physical investigation of trap-related effects in power HFETs and their reliability implications. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. vol. 2(3), pp. 1-7 ISSN: 1530-4388. </div></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l108" >Line 108:</td>
<td colspan="2" class="diff-lineno">Line 104:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#R. COFFIE, S. KELLER, L. MCCARTHY, CHINI A., D. BUTTARI, S. HEIKMAN, L. SHEN, U. K. MISHRA. (2002). p-Gan cap layer for dispersion control in AlGaN/GaN HEMTs. Solid State Technology Review. 19-20 Nov. 2002.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#R. COFFIE, S. KELLER, L. MCCARTHY, CHINI A., D. BUTTARI, S. HEIKMAN, L. SHEN, U. K. MISHRA. (2002). p-Gan cap layer for dispersion control in AlGaN/GaN HEMTs. Solid State Technology Review. 19-20 Nov. 2002.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. XIE, V. PAIDI, R. COFFIE, S. KELLER, S. HEIKMAN, CHINI A., U. MISHRA, S. LONG, M. RODWELL. (2002). High Linearity Class B Power Amplifiers in GaN HEMT Technology. IEEE Topical Workshop on Power Amplifiers for Wireless Communications. 9-10 Sep. 2002.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. XIE, V. PAIDI, R. COFFIE, S. KELLER, S. HEIKMAN, CHINI A., U. MISHRA, S. LONG, M. RODWELL. (2002). High Linearity Class B Power Amplifiers in GaN HEMT Technology. IEEE Topical Workshop on Power Amplifiers for Wireless Communications. 9-10 Sep. 2002.</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>2001<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2001<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#BACCHETTA N., BISELLO D., CANDELORI A., DA ROLD M., DESCOVICH M., KAMINSKY A., MESSINEO A., RIZZO F., VERZELLESI G. (2001). Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. A 461/1-3, pp. 204-206 ISSN: 0168-9002. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#BACCHETTA N., BISELLO D., CANDELORI A., DA ROLD M., DESCOVICH M., KAMINSKY A., MESSINEO A., RIZZO F., VERZELLESI G. (2001). Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. A 461/1-3, pp. 204-206 ISSN: 0168-9002. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#BORGARINO M., SOZZI G., MAZZANTI A., VERZELLESI G. (2001). Gate-lag effects in AlGaAs/GaAs power HFET's. MICROELECTRONICS RELIABILITY. vol. 41, pp. 1585-1589 ISSN: 0026-2714. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#BORGARINO M., SOZZI G., MAZZANTI A., VERZELLESI G. (2001). Gate-lag effects in AlGaAs/GaAs power HFET's. MICROELECTRONICS RELIABILITY. vol. 41, pp. 1585-1589 ISSN: 0026-2714. </div></td></tr>
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AChini
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AChini at 12:59, 22 May 2008
2008-05-22T12:59:15Z
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<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">__TOC__</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </div></td></tr>
</table>
AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5560&oldid=prev
AChini at 12:58, 22 May 2008
2008-05-22T12:58:51Z
<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 12:58, 22 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l13" >Line 13:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384). </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184). </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">----</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">==</ins>2006<ins class="diffchange diffchange-inline">==</ins></div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2006<del class="diffchange diffchange-inline">'''<br></del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, S.P. DENBAARS, U.K. MISHRA. (2006). Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. pp. 562-565 ISSN: 0018-9383.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#T. PALACIOS, CHINI A., D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, S.P. DENBAARS, U.K. MISHRA. (2006). Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. pp. 562-565 ISSN: 0018-9383.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#C. S. SHU, CHINI A., Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA. (2006). p-GaN/AlGaN/GaN Enhancement-Mode HEMTs. 64th Device Research Conference. June 2006. (pp. 163-164).</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#C. S. SHU, CHINI A., Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA. (2006). p-GaN/AlGaN/GaN Enhancement-Mode HEMTs. 64th Device Research Conference. June 2006. (pp. 163-164).</div></td></tr>
</table>
AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5559&oldid=prev
AChini at 12:58, 22 May 2008
2008-05-22T12:58:25Z
<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<col class="diff-marker" />
<col class="diff-content" />
<tr class="diff-title" lang="en">
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 12:58, 22 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l1" >Line 1:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>{{PowDeR}}</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>{{PowDeR}}</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">=</del>==2007<del class="diffchange diffchange-inline">=</del>==</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>==2007==</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).</div></td></tr>
</table>
AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5558&oldid=prev
AChini at 12:58, 22 May 2008
2008-05-22T12:58:04Z
<p></p>
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 12:58, 22 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l1" >Line 1:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>{{PowDeR}}</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>{{PowDeR}}</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>2007<del class="diffchange diffchange-inline">'''<br></del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">===</ins>2007<ins class="diffchange diffchange-inline">===</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).</div></td></tr>
</table>
AChini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5372&oldid=prev
Achini at 14:14, 8 May 2008
2008-05-08T14:14:21Z
<p></p>
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:14, 8 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l1" >Line 1:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''2007'''<br></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''2007'''<br></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. RAJAN, CHINI A., M. H. WONG, J. S. SPECK, U. K. MISHRA. (2007). N-polar GaN/AlGaN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS. vol. 102. August 2007. ISSN: 0021-8979.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. RAJAN, CHINI A., M. H. WONG, J. S. SPECK, U. K. MISHRA. (2007). N-polar GaN/AlGaN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS. vol. 102. August 2007. ISSN: 0021-8979.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#CHINI A. (2007). GaAs vs GaN HEMT power devices. 16th European Workshop on Heterostructure Technology (HETECH). Frejus, France. September 2 – 5, 2007.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#CHINI A. (2007). GaAs vs GaN HEMT power devices. 16th European Workshop on Heterostructure Technology (HETECH). Frejus, France. September 2 – 5, 2007.</div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384). </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184). </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">#M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007. </del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">#VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).</del></div></td><td colspan="2"> </td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''2006'''<br></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''2006'''<br></div></td></tr>
</table>
Achini
https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Publications&diff=5351&oldid=prev
Achini at 08:33, 6 May 2008
2008-05-06T08:33:13Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 08:33, 6 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l153" >Line 153:</td>
<td colspan="2" class="diff-lineno">Line 153:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. BRIDA, L. FERRARIO, V. GUARNIERI, F. GIACOMOZZI, B. MARGESIN, M. PARANJAPE, VERZELLESI G., M. ZEN. (1999). Optimization of TMAH etching for MEMS fabrication. 2nd Symposium on Design, Test, and Microfabrication of MEMS/MOEMS, Paris. Marzo-Aprile 1999. (vol. vol. 3680(SPIE Proc. Series), pp. 969-976). </div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#S. BRIDA, L. FERRARIO, V. GUARNIERI, F. GIACOMOZZI, B. MARGESIN, M. PARANJAPE, VERZELLESI G., M. ZEN. (1999). Optimization of TMAH etching for MEMS fabrication. 2nd Symposium on Design, Test, and Microfabrication of MEMS/MOEMS, Paris. Marzo-Aprile 1999. (vol. vol. 3680(SPIE Proc. Series), pp. 969-976). </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G.F. DALLA BETTA, M. DA ROLD, G.U. PIGNATEL, A. PACCAGNELLA, L. BOSISIO. (1999). Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion. IEEE Nuclear Science Symposium. Seattle (Washington, USA), Ottobre 1999. ISBN/ISSN: 0-7803-5699-3.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>#VERZELLESI G., G.F. DALLA BETTA, M. DA ROLD, G.U. PIGNATEL, A. PACCAGNELLA, L. BOSISIO. (1999). Self-limitation of edge-generated currents in single-sided microstrip detectors after type inversion. IEEE Nuclear Science Symposium. Seattle (Washington, USA), Ottobre 1999. ISBN/ISSN: 0-7803-5699-3.</div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">----</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">'''1998'''<br></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#DALLA BETTA G.-F., PIGNATEL G.U., VERZELLESI G., BELLUTTI P., BOSCARDIN M., FERRARIO L., ZORZI N., MAGLIONE A. (1998). Design and optimisation of an npn bipolar phototransistor for optical position encoders. MICROELECTRONICS JOURNAL. vol. 29(1-2), pp. 49-58 ISSN: 0959-8324. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#G. MENEGHESSO, A. BARTOLINI, VERZELLESI G., A. CAVALLINI, A. CASTALDINI, C. CANALI, E. ZANONI. (1998). Breakdown and low-temperature anomalous effects in 6H SiC JFETs. IEEE International Electron Devices Meeting (IEDM98). S. Francisco (California, USA), Dec. 1998. (pp. 695-698). </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">----</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">'''1997'''<br></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#L. COLALONGO, VERZELLESI G., D. PASSERI, A. LUI, P. CIAMPOLINI, M. RUDAN. (1997). Modelling of Light-Addressable Potentiometric Sensors. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 44(11), pp. 2083-2091 ISSN: 0018-9383. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">----</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">'''1996'''<br></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#VERZELLESI G., DAL FABBRO A., PAVAN P., VENDRAME L., ZABOTTO E., ZANINI A., CHANTRE A., ZANONI E. (1996). SPICE modeling of impact ionisation effects in silicon bipolar transistors. IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS. vol. 143(1), pp. 33-40 ISSN: 1350-2409. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">----</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">'''1995'''<br></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#J.B. SHEALY, W.-N. JIANG, P.A. PARIKH, VERZELLESI G., U.K. MISHRA. (1995). Junction heterostructures for high performance electronics. SOLID-STATE ELECTRONICS. vol. vol. 38(9), pp. 1607-1610 ISSN: 0038-1101. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#L. VENDRAME, E. ZABOTTO, A. DAL FABBRO, A. ZANINI, VERZELLESI G., E. ZANONI, A. CHANTRE, P. PAVAN. (1995). Influence of impact-ionization-induced base current reversal on bipolar transistor parameters. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 42(9), pp. 1636-1646 ISSN: 0018-9383.</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">----</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">'''1993'''<br></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1993). Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs. IEEE ELECTRON DEVICE LETTERS. vol. 14(2), pp. 69-71 ISSN: 0741-3106. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#VERZELLESI G., BACCARANI G., CANALI C., PAVAN P., VENDRAME L., ZANONI E. (1993). Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor. IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. 40(12), pp. 2296-2300 ISSN: 0018-9383. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#VERZELLESI G., R. TURETTA, P. PAVAN, A. COLLINI, A. CHANTRE, A. MARTY, C. CANALI, E. ZANONI. (1993). Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal. IEEE ELECTRON DEVICE LETTERS. vol. 14(9), pp. 431-434 ISSN: 0741-3106. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#VERZELLESI G., P. PAVAN, E. ZANONI, C. CANALI. (1993). Impact-ionization effects in advanced Si bipolar transistors. In: G. BACCARANI. Process and Device Modeling for Microelectronics. (pp. 269-324). : Elsevier Science Publishers B.V. </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">----</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">'''1992'''<br></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#E. ZANONI, E.F. CRABBE, J.M.C. STORK, P. PAVAN, VERZELLESI G., L. VENDRAME, C. CANALI. (1992). Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 927-930). </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">#VERZELLESI G., L. VENDRAME, R. TURETTA, P. PAVAN, A. CHANTRE, A. MARTY, M. CAVONE, R. RIVOIR, E. ZANONI. (1992). A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors. IEEE International Electron Devices Meeting (IEDM92). S. Francisco (California, USA), Dec. 1992. (pp. 413-416).</ins></div></td></tr>
</table>
Achini