https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&feed=atom&action=historyPowDeR/Projects/FPFET - MIUR PRIN 2005 - Revision history2024-03-29T12:23:31ZRevision history for this page on the wikiMediaWiki 1.34.2https://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5529&oldid=prevAChini at 09:39, 20 May 20082008-05-20T09:39:18Z<p></p>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div><center>''Development of field-plated GaAs-based PHEMTs and GaN-based HEMTs for high power and high efficiency RF applications''</center><br></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div><center>''Development of field-plated GaAs-based PHEMTs and GaN-based HEMTs for high power and high efficiency RF applications''</center><br></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">__TOC__</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">'''</del>Descrizione della Ricerca eseguita e dei risultati ottenuti<del class="diffchange diffchange-inline">'''</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">===</ins>Descrizione della Ricerca eseguita e dei risultati ottenuti<ins class="diffchange diffchange-inline">===</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div> </div></td></tr>
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</table>AChinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5502&oldid=prevAchini at 14:41, 19 May 20082008-05-19T14:41:44Z<p></p>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div><center>''Development of field-plated GaAs-based PHEMTs and GaN-based HEMTs for high power and high efficiency RF applications''</center><br></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div><center>''Development of field-plated GaAs-based PHEMTs and GaN-based HEMTs for high power and high efficiency RF applications''</center><br></div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5501&oldid=prevAchini at 14:38, 19 May 20082008-05-19T14:38:49Z<p></p>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div><center>''Development of field-plated GaAs-based PHEMTs and GaN-based HEMTs for high power and high efficiency RF applications''</center><br></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div><center>''Development of field-plated GaAs-based PHEMTs and GaN-based HEMTs for high power and high efficiency RF applications''</center><br></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5498&oldid=prevAchini at 14:34, 19 May 20082008-05-19T14:34:58Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:34, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l15" >Line 15:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[[Image:Bandiera inglese.jpg|25px]]The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[[Image:Bandiera inglese.jpg|25px]]</div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5497&oldid=prevAchini at 14:34, 19 May 20082008-05-19T14:34:38Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<tr class="diff-title" lang="en">
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:34, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l15" >Line 15:</td>
<td colspan="2" class="diff-lineno">Line 15:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">[[Image:Bandiera inglese.jpg|25px]]</ins>The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5496&oldid=prevAchini at 14:34, 19 May 20082008-05-19T14:34:14Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:34, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l11" >Line 11:</td>
<td colspan="2" class="diff-lineno">Line 11:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[[Image:Bandiera italiana.JPG|<del class="diffchange diffchange-inline">50px</del>]]</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[[Image:Bandiera italiana.JPG|<ins class="diffchange diffchange-inline">25px</ins>]]</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Scopo del programma di ricerca è ottenere dispositivi HEMT con field plate (FP) ottimizzati realizzati con le seguenti due tecnologie: HEMT pseudomorfici ad eterostruttura AlGaAs-InGaAs (GaAs-PHEMT) e HEMT ad eterostruttura AlGaN-GaN (GaN-HEMT). Per quanto riguarda i GaAs-PHEMT, l’obiettivo è aumentare la tensione di breakdown dei dispositivi convenzionali (tipicamente nell’intervallo 12-18 V) verso i 30-50 V, con ciò rendendo possibile il funzionamento sicuro a tensioni superiori a 15 V. Le maggiori tensioni di breakdown, in combinazione con i ridotti fenomeni di dispersione dc-RF, consentiranno di ottenere una potenza di uscita ed una power-added efficiency (PAE) maggiori di quelle dei dispositivi convenzionali senza FP. Densità di potenza di 1.5-2 W/mm sono in particolare attese a frequenze di 2-5 GHz (fmax di 20-30 GHz) grazie all’ottimizzazione del FP. Per quanto riguarda i GaN-HEMT, il FP consentirà di ottenere un funzionamento stabile a 28-48 V minimizzando l’impatto della dispersione dc-RF. Le densità di potenza attese sono in questo caso di 8-16 W/mm (per substrati di SiC) ed ancora il FP sarà ottimizzato per il funzionamento alle frequenze di 2-5 GHz. Ci si aspetta inoltre che l’introduzione del FP influenzi positivamente l’affidabilità degli HEMT.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Scopo del programma di ricerca è ottenere dispositivi HEMT con field plate (FP) ottimizzati realizzati con le seguenti due tecnologie: HEMT pseudomorfici ad eterostruttura AlGaAs-InGaAs (GaAs-PHEMT) e HEMT ad eterostruttura AlGaN-GaN (GaN-HEMT). Per quanto riguarda i GaAs-PHEMT, l’obiettivo è aumentare la tensione di breakdown dei dispositivi convenzionali (tipicamente nell’intervallo 12-18 V) verso i 30-50 V, con ciò rendendo possibile il funzionamento sicuro a tensioni superiori a 15 V. Le maggiori tensioni di breakdown, in combinazione con i ridotti fenomeni di dispersione dc-RF, consentiranno di ottenere una potenza di uscita ed una power-added efficiency (PAE) maggiori di quelle dei dispositivi convenzionali senza FP. Densità di potenza di 1.5-2 W/mm sono in particolare attese a frequenze di 2-5 GHz (fmax di 20-30 GHz) grazie all’ottimizzazione del FP. Per quanto riguarda i GaN-HEMT, il FP consentirà di ottenere un funzionamento stabile a 28-48 V minimizzando l’impatto della dispersione dc-RF. Le densità di potenza attese sono in questo caso di 8-16 W/mm (per substrati di SiC) ed ancora il FP sarà ottimizzato per il funzionamento alle frequenze di 2-5 GHz. Ci si aspetta inoltre che l’introduzione del FP influenzi positivamente l’affidabilità degli HEMT.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5495&oldid=prevAchini at 14:33, 19 May 20082008-05-19T14:33:54Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:33, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l11" >Line 11:</td>
<td colspan="2" class="diff-lineno">Line 11:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>===Programma di Ricerca===</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div> </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">[[Image:Bandiera italiana.JPG|50px]]</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Scopo del programma di ricerca è ottenere dispositivi HEMT con field plate (FP) ottimizzati realizzati con le seguenti due tecnologie: HEMT pseudomorfici ad eterostruttura AlGaAs-InGaAs (GaAs-PHEMT) e HEMT ad eterostruttura AlGaN-GaN (GaN-HEMT). Per quanto riguarda i GaAs-PHEMT, l’obiettivo è aumentare la tensione di breakdown dei dispositivi convenzionali (tipicamente nell’intervallo 12-18 V) verso i 30-50 V, con ciò rendendo possibile il funzionamento sicuro a tensioni superiori a 15 V. Le maggiori tensioni di breakdown, in combinazione con i ridotti fenomeni di dispersione dc-RF, consentiranno di ottenere una potenza di uscita ed una power-added efficiency (PAE) maggiori di quelle dei dispositivi convenzionali senza FP. Densità di potenza di 1.5-2 W/mm sono in particolare attese a frequenze di 2-5 GHz (fmax di 20-30 GHz) grazie all’ottimizzazione del FP. Per quanto riguarda i GaN-HEMT, il FP consentirà di ottenere un funzionamento stabile a 28-48 V minimizzando l’impatto della dispersione dc-RF. Le densità di potenza attese sono in questo caso di 8-16 W/mm (per substrati di SiC) ed ancora il FP sarà ottimizzato per il funzionamento alle frequenze di 2-5 GHz. Ci si aspetta inoltre che l’introduzione del FP influenzi positivamente l’affidabilità degli HEMT.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Scopo del programma di ricerca è ottenere dispositivi HEMT con field plate (FP) ottimizzati realizzati con le seguenti due tecnologie: HEMT pseudomorfici ad eterostruttura AlGaAs-InGaAs (GaAs-PHEMT) e HEMT ad eterostruttura AlGaN-GaN (GaN-HEMT). Per quanto riguarda i GaAs-PHEMT, l’obiettivo è aumentare la tensione di breakdown dei dispositivi convenzionali (tipicamente nell’intervallo 12-18 V) verso i 30-50 V, con ciò rendendo possibile il funzionamento sicuro a tensioni superiori a 15 V. Le maggiori tensioni di breakdown, in combinazione con i ridotti fenomeni di dispersione dc-RF, consentiranno di ottenere una potenza di uscita ed una power-added efficiency (PAE) maggiori di quelle dei dispositivi convenzionali senza FP. Densità di potenza di 1.5-2 W/mm sono in particolare attese a frequenze di 2-5 GHz (fmax di 20-30 GHz) grazie all’ottimizzazione del FP. Per quanto riguarda i GaN-HEMT, il FP consentirà di ottenere un funzionamento stabile a 28-48 V minimizzando l’impatto della dispersione dc-RF. Le densità di potenza attese sono in questo caso di 8-16 W/mm (per substrati di SiC) ed ancora il FP sarà ottimizzato per il funzionamento alle frequenze di 2-5 GHz. Ci si aspetta inoltre che l’introduzione del FP influenzi positivamente l’affidabilità degli HEMT.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5492&oldid=prevAchini at 14:32, 19 May 20082008-05-19T14:32:23Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:32, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l15" >Line 15:</td>
<td colspan="2" class="diff-lineno">Line 15:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline"><font color="#151B8D"></del>The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.<del class="diffchange diffchange-inline"></font></del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''</div></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5491&oldid=prevAchini at 14:31, 19 May 20082008-05-19T14:31:59Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<col class="diff-marker" />
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<tr class="diff-title" lang="en">
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:31, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l15" >Line 15:</td>
<td colspan="2" class="diff-lineno">Line 15:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><font color="#<del class="diffchange diffchange-inline">151B54</del>">The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><font color="#<ins class="diffchange diffchange-inline">151B8D</ins>">The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</font></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</font></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
</table>Achinihttps://web.ing.unimo.it/wiki/index.php?title=PowDeR/Projects/FPFET_-_MIUR_PRIN_2005&diff=5490&oldid=prevAchini at 14:31, 19 May 20082008-05-19T14:31:26Z<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 14:31, 19 May 2008</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l15" >Line 15:</td>
<td colspan="2" class="diff-lineno">Line 15:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>La ricerca verrà condotta in stretta collaborazione con le altre unità del progetto, che contribuiranno al progetto e alla caratterizzazione degli HEMT con FP e utilizzeranno le tecnologie sviluppate per progettare dimostratori di amplificatori di potenza (PA). La fabbricazione dei dispositivi sarà portata a termine da Alenia Marconi Systems (AMS) che supporta esternamente questo progetto agendo da partner tecnologico nello sviluppo degli HEMT in GaAs e GaN.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><font color="#<del class="diffchange diffchange-inline">736AFF</del>">The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><font color="#<ins class="diffchange diffchange-inline">151B54</ins>">The aim of the research program of this research unit is to achieve optimized field-plated (FP) HEMTs of the following two technologies: AlGaAs-InGaAs Pseudomorphic HEMTs (GaAs PHEMTs) and AlGaN-GaN HEMTs (GaN HEMTs). Regarding GaAs PHEMTs, the goal is to improve the breakdown voltage of standard devices (in the 12-18 V range) to the 30-50 V range, thus allowing for safe device operation at voltages higher than 15 V. Higher breakdown voltages in conjunction with the minimization of dc-to-RF dispersion will allow for improved output power and power-added efficiency (PAE). Output power densities in the 1.5-2 W/mm range are in particular expected to be obtained with FP PHEMTs (output power densities are in the 0.7-0.9 W/mm range for state-of-the-art, non-FP devices). The FP structure will reduce device power gain due to added parasitic capacitance, however the goal is to achieve devices suited for operation in the 2-5 GHz range (i.e. with fmax>20-30 GHz), by optimizing the FP parameters. Concerning GaN HEMTs, the FP will help to achieve stable operation in the 28-48 V range by minimizing the impact of RF current-collapse phenomena. Expected power densities are in the 8-16 W/mm range (on SiC substrates), and again the FP will be optimized in order to achieve device operation in the 2-5 GHz range. The introduction of FP structure is also expected to positively affect the reliability of GaN devices. </div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</font></div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The research will be carried out in close cooperation with the other research units, that will contribute to the design and characterization of field-plated HEMTs and will exploit the developed HEMT technologies for designing power-amplifier demonstrators. Fabrication of FP HEMTs will be carried out by Alenia Marconi Systems (AMS), that supports externally this project by acting as technological partner for GaAs and GaN device development.</font></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
</table>Achini