Difference between revisions of "Michele ESPOSTO"

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Brief CV:
 
Brief CV:
  
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Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983.  
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Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.
  
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He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.
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He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2002 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.
  
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From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia.
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In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University (OSU), Columbus - OHIO (U.S.A.), as Visiting Scholar.
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His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - supervisor Prof. Alessandro Chini.
 
  
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His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.
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Research activity:
 
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His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a  2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.
 
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His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.
 
  
 
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email: michele.esposto@unimore.it
 
email: michele.esposto@unimore.it
  
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voice: +39.059.205.6191
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voice: +39.059.205.6191 begin_of_the_skype_highlighting              +39.059.205.6191      end_of_the_skype_highlighting begin_of_the_skype_highlighting              +39.059.205.6191      end_of_the_skype_highlighting
  
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mobile phone: +39.349.28.43.806
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mobile phone: +39.349.28.43.806 +1.614.961.7479
  
 
fax:  +39.059.205.6329
 
fax:  +39.059.205.6329
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Department of Electrical and Computer Engineering
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The Ohio State University
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357/364 Caldwell Laboratory
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2024 Neil Ave, Columbus, OH 43210 (USA)
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Voice: +1.614.688.8458

Revision as of 16:42, 1 April 2010

Ph.D. candidate

Course: Electronics and Telecommunications

Brief CV:

Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.

He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2002 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.

In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University (OSU), Columbus - OHIO (U.S.A.), as Visiting Scholar.

His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.

List of publications:

International Workshops and Conference Presentations:

2008

1) A. Chini, M. Esposto, G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding.

2) A. Chini, M. Esposto, M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.

3) A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.

2009

4) M. Esposto, V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.

5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.

6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.

7) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.

8) M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

9) D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

10) V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

11) A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.


Journal Papers:

2009

1) A. Chini, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.

2) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.

DII - Information Engineering Department

Via Vignolese 905 - 41125 Modena

email: michele.esposto@unimore.it

voice: +39.059.205.6191 begin_of_the_skype_highlighting              +39.059.205.6191      end_of_the_skype_highlighting begin_of_the_skype_highlighting              +39.059.205.6191      end_of_the_skype_highlighting

mobile phone: +39.349.28.43.806 +1.614.961.7479

fax: +39.059.205.6329

Department of Electrical and Computer Engineering

The Ohio State University

357/364 Caldwell Laboratory

2024 Neil Ave, Columbus, OH 43210 (USA)

Voice: +1.614.688.8458

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