Difference between revisions of "Michele ESPOSTO"

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Ph.D. candidate
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[[File:my-picture.jpg|180px|left]]Ph.D. candidate
  
 
Course: Electronics and Telecommunications
 
Course: Electronics and Telecommunications
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Brief CV:
 
Brief CV:
  
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983.  
+
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.
  
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.
+
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.
  
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia.  
+
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.
+
 
 +
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.
  
 
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Research activity:
+
List of publications:
 +
 
 +
International Workshops and Conference Presentations:
 +
 
 +
'''2008'''
 +
 
 +
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding.
 +
 
 +
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.
 +
 
 +
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.
 +
 
 +
'''2009'''
 +
 
 +
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.
  
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a  2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.
+
5)  E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.
For the next future I will work on the processing optimization and standardization.
 
  
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.
+
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.
  
----
+
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.
 +
 
 +
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.
 +
 
 +
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.
  
List of publications:
+
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.
  
International Workshops and Conference Presentations:
+
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.
  
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc..
+
'''2010'''
  
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.
+
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.
  
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.
+
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.
  
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..
+
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.
  
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..
+
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding.  
  
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor, Jeju (Korea), October 2009.
+
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.
  
  
 
Journal Papers:
 
Journal Papers:
  
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.
+
'''2009'''
 +
 
 +
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.
 +
 
 +
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30,  Issue 10,  Oct. 2009, pp. 1021 - 1023.
 +
 
 +
'''2010'''
 +
 
 +
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.
 +
 
 +
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).
 +
 
 +
----
 +
{|border="1"
 +
|+ '''Looking Forward...'''
 +
! scope="col" | Conference
 +
! scope="col" | Location
 +
! scope="col" | Date
 +
! scope="col" | Deadline
 +
! scope="col" | Website
 +
|-
 +
| '''EMC''' || UC Santa Barbara (California, USA) || 22/24 June, 2011 || 31 January, 2011 || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]
 +
|-
 +
| '''DRC''' || UC Santa Barbara (California, USA) || 20/23 June, 2011 || 8 March, 2011 || [http://drc.ee.psu.edu/]
 +
|-
 +
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]
 +
|-
 +
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]
 +
|-
 +
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]
 +
|-
 +
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || - || -
 +
|-
 +
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || 2 March, 2011 || [http://www.icns9.org/]
 +
|-
 +
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]
 +
|-
 +
| '''NAMBE''' || - || - || - || -
 +
|-
 +
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]
 +
|-
 +
| '''WOCSEMMAD''' || Savannah (Georgia, USA) || February, 2011 || - || -
 +
|-
 +
| '''ESREF''' || Bordeaux (France) || 3/7 October, 2011 || 14 March, 2011 || [http://esref2011.ims-bordeaux.fr/]
 +
|-
 +
| '''HETECH''' || Lille (France) || October, 2011 || - || -
 +
|-
 +
| '''ICPS''' || - || 2012 || - || -
 +
|-
 +
| '''Lester Eastman Conference''' || - || 2012 || - || -
 +
|-
 +
| '''IWN''' || Sapporo (Japan) || 14/19 October, 2012 || - || -
 +
|}
  
 
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DII - Information Engineering Department
+
'''GaN-based HEMTs for Power Switching Applications'''
 +
 
 +
[[File:Pwrswitching.jpg|1000px|center]]
 +
 
 +
 
 +
----
 +
 
 +
Department of Electrical and Computer Engineering
 +
 
 +
The Ohio State University
  
Via Vignolese 905 - 41125 Modena
+
357/364 Caldwell Laboratory
  
email: michele.esposto@unimore.it
+
2024 Neil Ave, Columbus, OH 43210 (USA)
  
voice: +39.059.205.6191
+
email: espostom*at*ece.osu.edu, esposto.1*at*osu.edu
  
fax:   +39.059.205.6129
+
Voice: (00 1) 614.688.8458

Latest revision as of 19:44, 14 January 2011

My-picture.jpg

Ph.D. candidate

Course: Electronics and Telecommunications


Brief CV:

Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.

He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.

In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.

His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.


List of publications:

International Workshops and Conference Presentations:

2008

1) A. Chini, M. Esposto, G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding.

2) A. Chini, M. Esposto, M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.

3) A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.

2009

4) M. Esposto, V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.

5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.

6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.

7) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.

8) M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

9) D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

10) V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

11) A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.

2010

12) V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.

13) M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.

14) V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.

15) V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding.

16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.


Journal Papers:

2009

1) A. Chini, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.

2) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.

2010

3) M. Esposto, V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.

4) V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).


Looking Forward...
Conference Location Date Deadline Website
EMC UC Santa Barbara (California, USA) 22/24 June, 2011 31 January, 2011 [1]
DRC UC Santa Barbara (California, USA) 20/23 June, 2011 8 March, 2011 [2]
ISCS Berlin (Germany) 22/26 May, 2011 14 January, 2011 [3]
ESSDERC Helsinki (Finland) 12/16 September, 2011 11 April, 2011 [4]
EUMW Manchester (UK) 9/14 October, 2011 12 February, 2011 [5]
IEDM Washington D.C. (USA) 2/9 December, 2011 - -
ICNS9 Glasgow (UK) 10/15 July, 2011 2 March, 2011 [6]
WOCSDICE Catania (Italy) 29 May/1 June, 2011 25 February, 2011 [7]
NAMBE - - - -
MRS Spring Meeting San Francisco (California, USA) 25/29 April, 2011 2 November, 2010 [8]
WOCSEMMAD Savannah (Georgia, USA) February, 2011 - -
ESREF Bordeaux (France) 3/7 October, 2011 14 March, 2011 [9]
HETECH Lille (France) October, 2011 - -
ICPS - 2012 - -
Lester Eastman Conference - 2012 - -
IWN Sapporo (Japan) 14/19 October, 2012 - -

GaN-based HEMTs for Power Switching Applications

Pwrswitching.jpg



Department of Electrical and Computer Engineering

The Ohio State University

357/364 Caldwell Laboratory

2024 Neil Ave, Columbus, OH 43210 (USA)

email: espostom*at*ece.osu.edu, esposto.1*at*osu.edu

Voice: (00 1) 614.688.8458