Difference between revisions of "Michele ESPOSTO"

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3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.
 
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.
  
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..
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4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..
  
 
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..
 
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..
  
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor, Jeju (Korea), October 2009.
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6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the International Conference on Nitride Semiconductor, Jeju, October 2009.
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7) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", International Symposium on Compound Semiconductor 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proc..
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8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.
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9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.
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10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.
  
  
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1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.
 
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.
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2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for publication.
  
 
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Revision as of 13:58, 3 September 2009

Ph.D. candidate

Course: Electronics and Telecommunications


Brief CV:

Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983.

He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.

From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.


Research activity:

My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances. For the next future I will work on the processing optimization and standardization.

My work is supported by the MiUR under the FIRB 2007-2010: "Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications". Coord. Scientifico: prof. LIMITI Ernesto, Resp. Scientifico: prof. CHINI Alessandro.


List of publications:

International Workshops and Conference Presentations:

1) A. Chini, M. Esposto, G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc..

2) A. Chini, M. Esposto, M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.

3) A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.

4) M. Esposto, V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..

5) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..

6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the International Conference on Nitride Semiconductor, Jeju, October 2009.

7) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", International Symposium on Compound Semiconductor 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proc..

8) M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.

9) D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.

10) V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.


Journal Papers:

1) A. Chini, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.

2) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for publication.


DII - Information Engineering Department

Via Vignolese 905 - 41125 Modena

email: michele.esposto@unimore.it

voice: +39.059.205.6191

fax: +39.059.205.6129