Difference between revisions of "Mattia Borgarino"

From Web
Jump to navigation Jump to search
(Created page with 'Mattia Borgarino was born in Parma Italy, in 1968. He received the Laurea degree in electronics Engineering in 1993 and the Ph.D. degree in Information Technology from the Uni…')
 
Line 1: Line 1:
 
Mattia Borgarino was born in  Parma Italy, in 1968. He received  the Laurea degree in electronics  
 
Mattia Borgarino was born in  Parma Italy, in 1968. He received  the Laurea degree in electronics  
 
Engineering in 1993 and the Ph.D. degree in Information Technology from the University of Parma,                            Italy, in 1999 working on the reliability physics of compound semiconductor transistors for
 
Engineering in 1993 and the Ph.D. degree in Information Technology from the University of Parma,                            Italy, in 1999 working on the reliability physics of compound semiconductor transistors for
microwave applications.
+
microwave applications.\\
 
From 1999 to 2000, he was with the LAAS-CNRS, Toulouse, France, as a Postdoctoral Fellow in
 
From 1999 to 2000, he was with the LAAS-CNRS, Toulouse, France, as a Postdoctoral Fellow in
 
the frame of the European Project Training and Mobility of Researcher (TMR) « SiGe Heterodevices for  
 
the frame of the European Project Training and Mobility of Researcher (TMR) « SiGe Heterodevices for  

Revision as of 11:47, 2 July 2009

Mattia Borgarino was born in Parma Italy, in 1968. He received the Laurea degree in electronics Engineering in 1993 and the Ph.D. degree in Information Technology from the University of Parma, Italy, in 1999 working on the reliability physics of compound semiconductor transistors for microwave applications.\\ From 1999 to 2000, he was with the LAAS-CNRS, Toulouse, France, as a Postdoctoral Fellow in the frame of the European Project Training and Mobility of Researcher (TMR) « SiGe Heterodevices for Millimeter-Wave Applications » In 2000, he joined the University of Modena and Reggio Emilia, Modena, Italy, where he is now Associate Professor. His current main research interests cover the design of Si-based RFIC’s.