https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&feed=atom&action=history
Luca Morassi - Revision history
2024-03-28T12:09:41Z
Revision history for this page on the wiki
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https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8879&oldid=prev
83667 at 09:38, 27 November 2012
2012-11-27T09:38:05Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 09:38, 27 November 2012</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div> </div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">[J5] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.12, pp.3651-3654, Dec. 2012</ins></div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012</div></td></tr>
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83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8719&oldid=prev
83667 at 10:32, 23 July 2012
2012-07-23T10:32:25Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 10:32, 23 July 2012</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012</ins></div></td></tr>
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83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8688&oldid=prev
83667 at 08:53, 5 July 2012
2012-07-05T08:53:24Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 08:53, 5 July 2012</td>
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83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8687&oldid=prev
83667 at 08:53, 5 July 2012
2012-07-05T08:53:06Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 08:53, 5 July 2012</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Scientific activities:</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Scientific activities:</div></td></tr>
</table>
83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8686&oldid=prev
83667 at 08:52, 5 July 2012
2012-07-05T08:52:36Z
<p></p>
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 08:52, 5 July 2012</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l45" >Line 45:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;"></ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
</table>
83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8685&oldid=prev
83667 at 08:52, 5 July 2012
2012-07-05T08:52:07Z
<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<col class="diff-marker" />
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 08:52, 5 July 2012</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l42" >Line 42:</td>
<td colspan="2" class="diff-lineno">Line 42:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C7] '''Morassi, L.'''; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C7] '''Morassi, L.'''; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">[C8] '''Morassi, L.'''; Veksler, D.; Bersuker, G.; Verzellesi, G.; , "Generalized High-Low frequency CV technique for interface-trap characterization at III-V/high-k interface," 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), Porquerolles, France, May 30 - Jun 1, 2012</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l53" >Line 53:</td>
<td colspan="2" class="diff-lineno">Line 55:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">Participation at the conference: 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC): presentation of the works [C8].</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>----</div></td></tr>
</table>
83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8558&oldid=prev
83667 at 10:52, 28 March 2012
2012-03-28T10:52:06Z
<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 10:52, 28 March 2012</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l19" >Line 19:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; <ins class="diffchange diffchange-inline">, </ins>“Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td></tr>
</table>
83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8557&oldid=prev
83667 at 10:51, 28 March 2012
2012-03-28T10:51:47Z
<p></p>
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 10:51, 28 March 2012</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l19" >Line 19:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; <del class="diffchange diffchange-inline">, </del>''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td></tr>
</table>
83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8556&oldid=prev
83667 at 10:45, 28 March 2012
2012-03-28T10:45:44Z
<p></p>
<table class="diff diff-contentalign-left" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 10:45, 28 March 2012</td>
</tr><tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l19" >Line 19:</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; <ins class="diffchange diffchange-inline">, </ins>''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>List of publications in international conferences:</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>List of publications in international conferences:</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; <ins class="diffchange diffchange-inline">, </ins>"Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; <ins class="diffchange diffchange-inline">, </ins>"Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C5] '''L. <del class="diffchange diffchange-inline">Morassi</del>''', A. <del class="diffchange diffchange-inline">Padovani</del>, G. <del class="diffchange diffchange-inline">Verzellesi</del>, D. <del class="diffchange diffchange-inline">Veksler</del>, I. <del class="diffchange diffchange-inline">Ok and </del>G. <del class="diffchange diffchange-inline">Bersuker</del>, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010</div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C5] ''' <ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Verzellesi</ins>, G.<ins class="diffchange diffchange-inline">; Veksler</ins>, D.<ins class="diffchange diffchange-inline">; Ok</ins>, I.<ins class="diffchange diffchange-inline">; Bersuker, </ins>G.<ins class="diffchange diffchange-inline">; </ins>, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011</div></td></tr>
</table>
83667
https://web.ing.unimo.it/wiki/index.php?title=Luca_Morassi&diff=8555&oldid=prev
83667 at 10:42, 28 March 2012
2012-03-28T10:42:11Z
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<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">← Older revision</td>
<td colspan="2" style="background-color: #fff; color: #222; text-align: center;">Revision as of 10:42, 28 March 2012</td>
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<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>List of publications in journals:</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>List of publications in journals:</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[J1] A. <del class="diffchange diffchange-inline">Padovani, </del>'''L. <del class="diffchange diffchange-inline">Morassi</del>''', N. <del class="diffchange diffchange-inline">Raghavan, L. </del>Larcher, L. Wenhu<del class="diffchange diffchange-inline">, K. L. </del>Pey, <del class="diffchange diffchange-inline">and </del>G. <del class="diffchange diffchange-inline">Bersuker</del>, "A Physical Model for Post-Breakdown Digital Gate Current Noise"<del class="diffchange diffchange-inline">, IEEE </del>Electron Device Letters, vol. 31, no. 9, pp.1032-1034, <del class="diffchange diffchange-inline">Sep</del>. 2010<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[J1] <ins class="diffchange diffchange-inline">Padovani, </ins>A.<ins class="diffchange diffchange-inline">; </ins>'''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Raghavan</ins>, N.<ins class="diffchange diffchange-inline">; </ins>Larcher, L.<ins class="diffchange diffchange-inline">; </ins>Wenhu <ins class="diffchange diffchange-inline">Liu; Kin Leong </ins>Pey<ins class="diffchange diffchange-inline">; Bersuker</ins>, G.<ins class="diffchange diffchange-inline">; </ins>, "A Physical Model for Post-Breakdown Digital Gate Current Noise<ins class="diffchange diffchange-inline">,</ins>" Electron Device Letters<ins class="diffchange diffchange-inline">, IEEE </ins>, vol.31, no.9, pp.1032-1034, <ins class="diffchange diffchange-inline">Sept</ins>. 2010</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''L. <del class="diffchange diffchange-inline">Morassi</del>''', A. <del class="diffchange diffchange-inline">Padovani</del>, G. <del class="diffchange diffchange-inline">Verzellesi</del>, D. <del class="diffchange diffchange-inline">Veksler, I. </del>Ok, G. <del class="diffchange diffchange-inline">Bersuker</del>, "Interface-Trap Effects in Inversion-Type Enhancement-Mode <del class="diffchange diffchange-inline">InGaAs/ZrO2 </del>N-Channel MOSFETs", IEEE Transactions on <del class="diffchange diffchange-inline">Electron Devices</del>, vol. 58, no. 1, pp.107-114, Jan. 2011<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[J2] '''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Verzellesi</ins>, G.<ins class="diffchange diffchange-inline">; Veksler</ins>, D.<ins class="diffchange diffchange-inline">; Injo </ins>Ok<ins class="diffchange diffchange-inline">; Bersuker</ins>, G.<ins class="diffchange diffchange-inline">; </ins>, "Interface-Trap Effects in Inversion-Type Enhancement-Mode <ins class="diffchange diffchange-inline"> </ins>N-Channel MOSFETs<ins class="diffchange diffchange-inline">,</ins>" <ins class="diffchange diffchange-inline">Electron Devices</ins>, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[J3] G. <del class="diffchange diffchange-inline">Bersuker</del>, D. <del class="diffchange diffchange-inline">Veksler</del>, C. D. <del class="diffchange diffchange-inline">Young</del>, H. <del class="diffchange diffchange-inline">Park</del>, W. <del class="diffchange diffchange-inline">Taylor</del>, P. <del class="diffchange diffchange-inline">Kirsch</del>, R<del class="diffchange diffchange-inline">, Jammy, </del>'''L. <del class="diffchange diffchange-inline">Morassi</del>''', A. <del class="diffchange diffchange-inline">Padovani</del>, <del class="diffchange diffchange-inline">and </del>L. <del class="diffchange diffchange-inline">Larcher, </del>“Connecting electrical and structural dielectric <del class="diffchange diffchange-inline">characteristics”</del>, International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[J3] <ins class="diffchange diffchange-inline">Bersuker, </ins>G.<ins class="diffchange diffchange-inline">; Veksler</ins>, D.<ins class="diffchange diffchange-inline">; Young</ins>, C.D.<ins class="diffchange diffchange-inline">; Park</ins>, H.<ins class="diffchange diffchange-inline">; Taylor</ins>, W.<ins class="diffchange diffchange-inline">; Kirsch</ins>, P.<ins class="diffchange diffchange-inline">; Jammy</ins>, R<ins class="diffchange diffchange-inline">.; </ins>''' <ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Larcher</ins>, L.<ins class="diffchange diffchange-inline">; </ins>“Connecting electrical and structural dielectric <ins class="diffchange diffchange-inline">characteristics</ins>,<ins class="diffchange diffchange-inline">” </ins>International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012</div></td></tr>
<tr><td colspan="2" class="diff-lineno" id="mw-diff-left-l28" >Line 28:</td>
<td colspan="2" class="diff-lineno">Line 28:</td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>List of publications in international conferences:</div></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>List of publications in international conferences:</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C1] '''L. <del class="diffchange diffchange-inline">Morassi</del>''', L. <del class="diffchange diffchange-inline">Larcher</del>, L. <del class="diffchange diffchange-inline">Pantisano</del>, A. <del class="diffchange diffchange-inline">Padovani</del>, R. <del class="diffchange diffchange-inline">Degreave</del>, M. B. <del class="diffchange diffchange-inline">Zahid</del>, <del class="diffchange diffchange-inline">and </del>B. J. <del class="diffchange diffchange-inline">O'Sullivan, </del>"Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing"<del class="diffchange diffchange-inline">, </del>41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C1] '''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Larcher</ins>, L.<ins class="diffchange diffchange-inline">; Pantisano</ins>, L.<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Degreave</ins>, R.<ins class="diffchange diffchange-inline">; Zahid</ins>, M. B.<ins class="diffchange diffchange-inline">; O'Sullivan</ins>, B. J.<ins class="diffchange diffchange-inline">; </ins>"Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing<ins class="diffchange diffchange-inline">,</ins>" 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C2] G. <del class="diffchange diffchange-inline">Bersuker</del>, D. <del class="diffchange diffchange-inline">Heh</del>, C. D. <del class="diffchange diffchange-inline">Young, </del>'''L. <del class="diffchange diffchange-inline">Morassi</del>''', A. <del class="diffchange diffchange-inline">Padovani</del>, L. <del class="diffchange diffchange-inline">Larcher</del>, K. S. <del class="diffchange diffchange-inline">Yew</del>, Y. C. <del class="diffchange diffchange-inline">Ong</del>, D. S. <del class="diffchange diffchange-inline">Ang</del>, K. L. <del class="diffchange diffchange-inline">Pey</del>, <del class="diffchange diffchange-inline">and </del>W. <del class="diffchange diffchange-inline">Taylor</del>, "Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer"<del class="diffchange diffchange-inline">, IEEE International </del>Reliability Physics Symposium<del class="diffchange diffchange-inline">, Anaheim </del>(<del class="diffchange diffchange-inline">CA</del>), <del class="diffchange diffchange-inline">USA</del>, <del class="diffchange diffchange-inline">May 2-6</del>, <del class="diffchange diffchange-inline">2010</del>, pp. 373-378<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C2] <ins class="diffchange diffchange-inline">Bersuker, </ins>G.<ins class="diffchange diffchange-inline">; Heh</ins>, D.<ins class="diffchange diffchange-inline">; Young</ins>, C.D.<ins class="diffchange diffchange-inline">; </ins>'''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Larcher</ins>, L.<ins class="diffchange diffchange-inline">; Yew</ins>, K.S.<ins class="diffchange diffchange-inline">; Ong</ins>, Y.C.<ins class="diffchange diffchange-inline">; Ang</ins>, D.S.<ins class="diffchange diffchange-inline">; Pey</ins>, K.L.<ins class="diffchange diffchange-inline">; Taylor</ins>, W.<ins class="diffchange diffchange-inline">; </ins>, "Mechanism of high-k dielectric-induced breakdown of <ins class="diffchange diffchange-inline">the </ins>interfacial SiO2 layer<ins class="diffchange diffchange-inline">,</ins>" Reliability Physics Symposium (<ins class="diffchange diffchange-inline">IRPS</ins>), <ins class="diffchange diffchange-inline">2010 IEEE International </ins>, <ins class="diffchange diffchange-inline">vol.</ins>, <ins class="diffchange diffchange-inline">no.</ins>, pp.373-378<ins class="diffchange diffchange-inline">, 2-6 May 2010</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C3] G. <del class="diffchange diffchange-inline">Bersuker</del>, D. <del class="diffchange diffchange-inline">Veksler</del>, C. D. <del class="diffchange diffchange-inline">Young</del>, H. <del class="diffchange diffchange-inline">Park, </del>'''L. <del class="diffchange diffchange-inline">Morassi</del>''', A. <del class="diffchange diffchange-inline">Padovani</del>, L. <del class="diffchange diffchange-inline">Larcher</del>, W. <del class="diffchange diffchange-inline">Taylor</del>, P. D. <del class="diffchange diffchange-inline">Kirsch</del>, <del class="diffchange diffchange-inline">and </del>R. <del class="diffchange diffchange-inline">Jammy, </del>"Connecting electrical and structural dielectric characteristics"<del class="diffchange diffchange-inline">, </del>Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C3] <ins class="diffchange diffchange-inline">Bersuker, </ins>G.<ins class="diffchange diffchange-inline">; Veksler</ins>, D.<ins class="diffchange diffchange-inline">; Young</ins>, C. D.<ins class="diffchange diffchange-inline">; Park</ins>, H.<ins class="diffchange diffchange-inline">; </ins>'''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Larcher</ins>, L.<ins class="diffchange diffchange-inline">; Taylor</ins>, W.<ins class="diffchange diffchange-inline">; Kirsch</ins>, P. D.<ins class="diffchange diffchange-inline">; Jammy</ins>, R.<ins class="diffchange diffchange-inline">; </ins>"Connecting electrical and structural dielectric characteristics<ins class="diffchange diffchange-inline">,</ins>" Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C4] '''L. <del class="diffchange diffchange-inline">Morassi</del>''', G. <del class="diffchange diffchange-inline">Verzellesi</del>, A. <del class="diffchange diffchange-inline">Padovani</del>, L. <del class="diffchange diffchange-inline">Larcher</del>, P. <del class="diffchange diffchange-inline">Pavan</del>, D. <del class="diffchange diffchange-inline">Veksler, I. </del>Ok, <del class="diffchange diffchange-inline">and </del>G. <del class="diffchange diffchange-inline">Bersuker</del>, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs"<del class="diffchange diffchange-inline">, IEEE International </del>Reliability Physics Symposium<del class="diffchange diffchange-inline">, Anaheim </del>(<del class="diffchange diffchange-inline">CA</del>), <del class="diffchange diffchange-inline">USA</del>, <del class="diffchange diffchange-inline">May 2-6</del>, <del class="diffchange diffchange-inline">2010</del>, pp. 532-535<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C4] '''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Verzellesi</ins>, G.<ins class="diffchange diffchange-inline">; Padovani</ins>, A.<ins class="diffchange diffchange-inline">; Larcher</ins>, L.<ins class="diffchange diffchange-inline">; Pavan</ins>, P.<ins class="diffchange diffchange-inline">; Veksler</ins>, D.<ins class="diffchange diffchange-inline">; Injo </ins>Ok<ins class="diffchange diffchange-inline">; Bersuker</ins>, G.<ins class="diffchange diffchange-inline">; </ins>, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs<ins class="diffchange diffchange-inline">,</ins>" Reliability Physics Symposium (<ins class="diffchange diffchange-inline">IRPS</ins>), <ins class="diffchange diffchange-inline">2010 IEEE International </ins>, <ins class="diffchange diffchange-inline">vol.</ins>, <ins class="diffchange diffchange-inline">no.</ins>, pp.532-535<ins class="diffchange diffchange-inline">, 2-6 May 2010</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C5] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010<del class="diffchange diffchange-inline">.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C5] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C6] '''L. <del class="diffchange diffchange-inline">Morassi</del>''', G. <del class="diffchange diffchange-inline">Verzellesi</del>, P. <del class="diffchange diffchange-inline">Pavan</del>, D. <del class="diffchange diffchange-inline">Veksler</del>, I. <del class="diffchange diffchange-inline">Ok, H. </del>Zhao, J. C. <del class="diffchange diffchange-inline">Lee and </del>G. <del class="diffchange diffchange-inline">Bersuker</del>, <del class="diffchange diffchange-inline">“Experimental</del>/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate <del class="diffchange diffchange-inline">dielectric”</del>, 23rd International Conference on Indium Phosphide and Related Materials <del class="diffchange diffchange-inline">(IPRM2011)</del>, <del class="diffchange diffchange-inline">Berlin</del>, <del class="diffchange diffchange-inline">Germany</del>, <del class="diffchange diffchange-inline">May </del>22-26<del class="diffchange diffchange-inline">, </del>2011<del class="diffchange diffchange-inline">, pp. 103-105.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C6] '''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Verzellesi</ins>, G.<ins class="diffchange diffchange-inline">; Pavan</ins>, P.<ins class="diffchange diffchange-inline">; Veksler</ins>, D.<ins class="diffchange diffchange-inline">; Ok</ins>, I.<ins class="diffchange diffchange-inline">; Han </ins>Zhao<ins class="diffchange diffchange-inline">; Lee</ins>, J.C.<ins class="diffchange diffchange-inline">; Bersuker, </ins>G.<ins class="diffchange diffchange-inline">; </ins>, <ins class="diffchange diffchange-inline">"Experimental</ins>/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate <ins class="diffchange diffchange-inline">dielectric</ins>,<ins class="diffchange diffchange-inline">" Compound Semiconductor Week (CSW/IPRM), 2011 and </ins>23rd International Conference on Indium Phosphide and Related Materials , <ins class="diffchange diffchange-inline">vol., no.</ins>, <ins class="diffchange diffchange-inline">pp.1-3</ins>, 22-26 <ins class="diffchange diffchange-inline">May </ins>2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>[C7] '''L. <del class="diffchange diffchange-inline">Morassi</del>''', G. <del class="diffchange diffchange-inline">Verzellesi</del>, L. <del class="diffchange diffchange-inline">Larcher, I. Ok</del>, <del class="diffchange diffchange-inline">H. Zhao and </del>J. C. <del class="diffchange diffchange-inline">Lee</del>, <del class="diffchange diffchange-inline">“Errors </del>affecting split-CV mobility measurements in InGaAs MOS-<del class="diffchange diffchange-inline">HEMTs”</del>, 23rd International Conference on Indium Phosphide and Related Materials <del class="diffchange diffchange-inline">(IPRM2011)</del>, <del class="diffchange diffchange-inline">Berlin</del>, <del class="diffchange diffchange-inline">Germany</del>, <del class="diffchange diffchange-inline">May </del>22-26<del class="diffchange diffchange-inline">, </del>2011<del class="diffchange diffchange-inline">, pp. 327-329.</del></div></td><td class='diff-marker'>+</td><td style="color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>[C7] '''<ins class="diffchange diffchange-inline">Morassi, </ins>L.'''<ins class="diffchange diffchange-inline">; Verzellesi</ins>, G.<ins class="diffchange diffchange-inline">; Larcher</ins>, L.<ins class="diffchange diffchange-inline">; Han Zhao; Lee</ins>, J.C.<ins class="diffchange diffchange-inline">; </ins>, <ins class="diffchange diffchange-inline">"Errors </ins>affecting split-CV mobility measurements in InGaAs MOS-<ins class="diffchange diffchange-inline">HEMTs," Compound Semiconductor Week (CSW/IPRM)</ins>, <ins class="diffchange diffchange-inline">2011 and </ins>23rd International Conference on Indium Phosphide and Related Materials , <ins class="diffchange diffchange-inline">vol., no.</ins>, <ins class="diffchange diffchange-inline">pp.1-3</ins>, 22-26 <ins class="diffchange diffchange-inline">May </ins>2011</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f8f9fa; color: #222; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"></td></tr>
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