Difference between revisions of "Luca Morassi"

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[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode  N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011
 
[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode  N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011
  
[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011
+
[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; , ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011
  
 
[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012
 
[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012
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List of publications in international conferences:
 
List of publications in international conferences:
  
[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009
+
[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; , "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009
  
 
[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010
 
[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010
  
[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009
+
[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; , "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009
  
 
[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010
 
[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010
  
[C5] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010
+
[C5] ''' Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Ok, I.; Bersuker, G.; , “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010
  
 
[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011
 
[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

Revision as of 11:45, 28 March 2012

MyPic.JPG

Ph.D. Student

Course: Electronics and Telecommunications


Brief CV:

Luca Morassi was born in Mirandola (Mo), Italy, on September 15th, 1982.

From July 2008 to February 2009 he was in IMEC (Interuniversity MicroElectronics Centre, Leuven, Belgium) for an internship; during this period he worked on the characterization of High-k-based composed stack for MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) gate oxide. In 2009 he received his academic master degree in Electronic Engineering from University of Modena e Reggio Emilia, Italy - Topic: "Characterization and Simulation of High-k Dielectrics for Innovative Non-Volatile Memories". During 2009 he collaborated with University of Modena and Reggio Emilia with a research activity focused on the electrical characterization of high-k material for Non-Volatile Memory (NVM) devices. Since 2010 he is a PhD student at ICT Electronics & Telecommunications Doctorate School, Modena, Italy with a research activity based on III-V compound semiconductor. His main research field is the characterization of InGaAs-channel MOSFETs and MOSHEMTs (Metal Oxide Semiconductor High Electron Mobilty Transistors) for high power and logic applications.



List of publications in journals:

[J1] Padovani, A.; Morassi, L.; Raghavan, N.; Larcher, L.; Wenhu Liu; Kin Leong Pey; Bersuker, G.; , "A Physical Model for Post-Breakdown Digital Gate Current Noise," Electron Device Letters, IEEE , vol.31, no.9, pp.1032-1034, Sept. 2010

[J2] Morassi, L.; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011

[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; , Morassi, L.; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011

[J4] Morassi, L.; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012



List of publications in international conferences:

[C1] Morassi, L.; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; , "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009

[C2] Bersuker, G.; Heh, D.; Young, C.D.; Morassi, L.; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010

[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; Morassi, L.; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; , "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009

[C4] Morassi, L.; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010

[C5] Morassi, L.; Padovani, A.; Verzellesi, G.; Veksler, D.; Ok, I.; Bersuker, G.; , “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010

[C6] Morassi, L.; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

[C7] Morassi, L.; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011



Scientific activities:

Participation at the conference: IEEE International Reliability Physics Symposium (IRPS 2010); presentation of the work [C4].

Participation at the conference: European Workshop on Heterostructure Technology (HETECH 2010); presentation of the work [C5].

Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].



DISMI - Dipartimento di Scienze e Metodi dell'Ingegneria

Università di Modena e Reggio Emilia

Pad. Tamburini - Via Amendola 2

42122, Reggio Emilia


mail: luca.morassi@unimore.it

Tel: +39-0522522638

Fax: +39-0522522609

Cell: +39-3381468756