Davide Saguatti

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Ph.D. student
Electronics and Telecommunications

Address: Via Vignolese 905, 41125 Modena - ITALY
Phone: +39 059 2056383
Fax: +39 059 2056129
Email: davide.saguatti@unimore.it
Office: OptoLab, DII (ground floor)

Brief CV

Davide Saguatti was born in Modena, Italy in 1985. He received his B.S. in electrical engineering in 2007 working on digital modeling of acoustic musical instruments, and his M.S. in electrical engineering in 2009 working on numerical simulations of current assisted photonic demodulators, both “somma cum laude” from the University of Modena and Reggio Emilia, Modena, Italy.

Since 2010 he has been pursuing his Ph.D. in Electronics and Telecommunications from the ICT School of the University of Modena and Reggio Emilia, working on numerical simulations and analysis of InP HEMTs, photonics demodulators, light-emitting devices and radiation detectors.

In 2010 and 2011, for 9 months totally, he joined Prof. M. Missous’ research group within the Microelectronic and Nanostructures Group of the School of EE&E at the University of Manchester, Manchester, UK, as a Honorary Visitor.

Davide is co-founder and vice-president of RSens srl, the first joint spin-off between the University of Modena and Reggio Emilia and the University of Trento, which designs and produces innovative electronic sensors for Radon gas detection. Davide has been member of IEEE since 2008.

Research Activity

Scientific activity concerns/has concerned:

  1. Physical modeling of acoustic instruments (BS thesis)
  2. Numerical simulations and design of current-assisted photonic demodulators (CAPDs) for a TOF-based 3D CMOS image sensor (MS thesis)
  3. Numerical simulations, design and characterization of InP-based HEMTs and MOS-HEMTs for high-frequency, high-efficiency RF applications
  4. Numerical simulations and analysis of efficiency issues in GaN light-emitting diodes (LEDs)
  5. Numerical simulations and analysis of organic light-emitting transistors (OLETs) and field-effect transistors (OFET) for lighting and sensing applications
  6. Design and fabrication of innovative radiation sensors

Current Assisted Photonic Demodulators

Within the project [1], 0.18 um CMOS-based CAPDs has been designed and optimized to be employed as sensors for a TOF 3D imaging system. Thanks to the intrinsic demodulation capability of these detectors, simple sine wave-TOF can be implemented, obtaining information about distance from the phase difference measured between sent and received light beam. With the aid of several numerical simulations, two potential fabrication technologies have been evaluated and the optimal device geometry has been identified, with a deep understanding of the tradeoffs which control DC and AC device behaviours. Noise performance has been measured on the fabricated device, while numerical simulations are going to be carried out to deeply study such aspect.

InP-based HEMTs and MOS-HEMTs

GaN Light Emitting Diodes

Radiation sensors

Research Projects

  1. MIUR-PRIN (2007), “Time-of-Flight Range Image Sensor (TRIS)”, 2008-2010
  2. Fondazione Cassa di Risparmio di Modena, "Field-Plated InGaAs-InAlAs High Electron Mobility Transistors for Emerging High-Frequency Applications”, 2008-2011
  3. SPINNER 2013, “RSens” project (innovative entrepreneurial projects with high knowledge content), 2009-2010




Conferences and Workshops



[c7] M. Mohamad Isa, D. Saguatti, G. Verzellesi, A. Chini, K. W. Ian, M. Missous, “Fabrication of Novel High Frequency and High Breakdown InAlAs-InGaAs pHEMTs”, Proc. of the 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM 2010), Smolenice, Slovakia, October 2010.

[c6] D. Saguatti, K. W. Ian, M. Mohamad Isa, M. Missous, “Design and Fabrication of InGaAs-InAlAs Pseudo-MIS HEMTs”, Proc. of the 19th European Workshop on Heterostructure Technology (HeTech 2010), Fodele - Crete, Greece, October 2010.

[c5] M. Mohamad Isa, K. W. Ian, D. Saguatti, M. Missous, “Novel High Breakdown InGaAs-InAlAs pHEMT for Low Noise and High Power Applications”, UK Semiconductors 2010 conference, Sheffield, UK, July 2010.

[c4] D. Saguatti, M. Mohamad Isa, K. W. Ian, M. Missous, “InAlAs-InGaAs pHEMT TCAD Simulation and Optimization”, UK Semiconductors 2010 conference, Sheffield, UK, July 2010.

[c3] D. Saguatti, A. Chini, G. Verzellesi, M. Mohamad Isa, K. W. Ian, M. Missous, “TCAD Optimization of Field-Plated InAlAs-InGaAs HEMTs”, Proc. of the Indium Phosphide and Related Materials conference (IPRM 2010), Takamatsu, Japan, June 2010.

[c2] L. Rovati, G. Verzellesi, G.-F. Dalla Betta, M. Bonaiuti, L. Bidinelli, D. Saguatti, V. Tyzhnevyi, N. Zorzi, S. Bettarini, “A 2.4-GHz Wireless Alpha Ray Sensor for Remote Monitoring and Spectroscopy”, Proc. of the International Instrumentation and Measurement Technology Conference (I2MTC 2010), Austin, USA, May 2010.


[c1] D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, “Design of field-plated InP-based HEMTs”, Proc. of the 18th European Workshop on Heterostructure Technology (HeTech ’09), Günzburg/Ulm, Germany, November 2009.