PowDeR:Publications

---

2007

1. S. RAJAN, CHINI A., M. H. WONG, J. S. SPECK, U. K. MISHRA. (2007). N-polar GaN/AlGaN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS. vol. 102. August 2007. ISSN: 0021-8979.
2. CHINI A. (2007). GaAs vs GaN HEMT power devices. 16th European Workshop on Heterostructure Technology (HETECH). Frejus, France. September 2 – 5, 2007.
3. CHINI A., G. MENEGHESSO, E. ZANONI. (2007). Electroluminescence and Emission Spectroscopy Including Transient Phenomena in Wide Band-Gap Devices for Future THz Applications. European Microwave Week 2007. Munich, Germany. 8-12 October, 2007.
4. M. FAQIR, CHINI A., G. VERZELLESI, F. FANTINI, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, P. KORDOS. (2007). Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
5. M. PERONI, P. ROMANINI, A. PANTELLINI, A. CETRONIO, L. MARIUCCI, A. MINOTTI, G. GHIONE, V. CAMARCHIA, E. LIMITI, A. SERINO, CHINI A. (2007). Design, Fabrication and Characterization of Gamma Gate GaN HEMT for High- Frequency/Wide-Band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
6. S. LAVANGA, C. LANZIERI, M. PERONI, P. ROMANINI, A.CETRONIO, CHINI A., L. MARIUCCI. (2007). Very High Power Field-Plate GaAs PHEMT technology for C and X -band applications. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE). Venice, Italy. May 20-23, 2007.
7. G.-F. DALLA BETTA, G. BATIGNANI, M. BOSCARDIN, L. BOSISIO, P. GREGORI, L. PANCHERI, C. PIEMONTE, L. RATTI, VERZELLESI G., N. ZORZI. (2007). Monolithic integration of detectors and transistors on high-resistivity silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. vol. 579, pp. 658-663 ISSN: 0168-9002.
8. M. FAQIR, VERZELLESI G., F. FANTINI, F. DANESIN, F. RAMPAZZO, G. MENEGHESSO, E. ZANONI, A. CAVALLINI, A. CASTALDINI, N. LABAT, A. TOUBOUL, C. DUA. (2007). Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs. MICROELECTRONICS RELIABILITY. vol. 47, pp. 1639-1642 ISSN: 0026-2714.
9. E. ZANONI, G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON. (2007). A review of failure modes and mechanisms of GaN-based HEMTs. In: IEEE Int. Electron Devices Meeting Technical Digest (IEDM 07). IEEE Int. Electron Devices Meeting (IEDM). Washington D.C. (USA). Dec. 2007. (pp. 381-384).
10. G. MENEGHESSO, VERZELLESI G., F. DANESIN, M. MENEGHINI, F. RAMPAZZO, A. TAZZOLI, F. ZANON, E. ZANONI. (2007). Degradation of GaN HEMT at high drain voltages. In: Proc. of the 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). 11th International Symposium on Microwave and Optical Technology (ISMOT-2007). Monte Porzio Catone (Roma, Italy). Dec. 2007. (pp. 181-184).
11. M. FAQIR, VERZELLESI G., F. FANTINI, A. CAVALLINI, A. CASTALDINI, F. DANESIN, G. MENEGHESSO, E. ZANONI. (2007). Interpretation of buffer-trap effects in AlGaN/GaN HEMTs. 16th European Workshop on Heterostructure Technology (HeTech’07). Frejus, (France). September 2007.
12. VERZELLESI G., G. BATIGNANI, M. BONAIUTI, L. BOSISIO, G.-F. DALLA BETTA, G. GIACOMINI, C. PIEMONTE, L. ROVATI, N. ZORZI. (2007). Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems. In: IEEE Nuclear Science Symposium Conference Record (NSS 2007). IEEE Nuclear Science Symposium. Honolulu (Hawaii, USA). Nov. 2007. (pp. 780-783).