Alessandro Chini

Recapiti:

Dipartimento di Ingegneria dell'Informazione, Università di Modena e Reggio  Emilia
 
Via Vignolese 905, 41125 Modena - ITALY.
Tel.: +39 059 2056164
Fax : +39 059 2056129
email: alessandro.chini@unimore.it
webpage

Alessandro Chini (A.C.) è nato a Rovereto (TN) nel 1975. Si è laureato in Ingegneria Elettronica nel 1999 presso l'Università di Padova ed ha conseguito il titolo di Dottore di Ricerca in Ingegneria Elettronica e delle Telecomunicazioni nel Febbraio 2003 sempre presso l'Università di Padova. A.C. ha svolto il proprio Dottorato di Ricerca in collaborazione con l'Università della California - Santa Barbara presso la quale ha lavorato dal 2002 al 2004 in qualità di Assistant Research Engineer occupandosi della fabbricazione ed ottimizzazione di dispositivi HEMT in Nitruro di Gallio per applicazioni di potenza a radio-frequenza.

Nel 2003 risulta vincitore di un concorso per Ricercatore Universitario, settore disciplinare ING/INF 01-Elettronica bandito dalla Facoltà di Ingegneria dell'Università degli Studi di Modena e Reggio Emilia, presso la quale presta servizio dal Gennaio 2004.

IntranetTest

Intranet Dief Example

Attività Didattica

Power Devices and Circuits

The lesson of the 30th of September is cancelled!!!

Laboratorio di Elettronica

Elettronica Applicata

Pubblicazioni su rivista

1. V. DI LECCE, M. ESPOSTO, M. BONAIUTI, G. MENEGHESSO, E. ZANONI, F. FANTINI, A. CHINI, “Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress”, Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).
2. A. CHINI, "Interview", IET Electronics Letters, Vol. 46, No. 8, pp. 544-544, Apr. 2010.
3. A. CHINI, L. ROVATI, “Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker”, IET Electronics Letters, Vol. 46, No. 8, pp. 587-589, Apr. 2010.
4. A. CHINI, F. SOCI, “Boost-converter-based solar harvester for low power applications”, IET Electronics Letters, Vol. 46, No. 4, pp. 296-298, Feb. 2010.
5. G. MENEGHESSO, M. MENEGHINI, A. TAZZOLI, N. RONCHI, A. STOCCO, A. CHINI, E. ZANONI, “Reliability issues of Gallium Nitride High Electron Mobility Transistors”, International Journal of Microwave and Wireless Technologies, Vol. 2, No. 01, pp 39-50, Feb 2010.
6. A. CHINI, V. DI LECCE, V. DI LECCE, G. MENEGHESSO, E. ZANONI, “Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation”, IEEE Electron Device Letters, Vol. 30, No. 10, pp. 1021-1023, Oct. 2009.
7. A. CHINI, M. ESPOSTO, G. MENEGHESSO, E. ZANONI, “Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements”, IET Electronics Letters, Vol. 45, No. 8, pp. 426-427, Apr. 2009.
8. M. FAQIR, G. VERZELLESI, A. CHINI, F. FANTINI, F. DANESIN, G. MENEGHESSO, E. ZANONI, C. DUA, “Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility Transistors”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, vol. 8, pp. 240-247, 2008.
9. S. RAJAN, A. CHINI, M. H. WONG, J. S. SPECK, U. K. MISHRA, “N-polar GaN/AlGaN/GaN high electron mobility transistors”, JOURNAL OF APPLIED PHYSICS, vol. 102, 2007.
10. T. PALACIOS, A. CHINI, D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, S.P. DENBAARS, U.K. MISHRA, "Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs", IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 562-565, 2006.
11. G. VERZELLESI, G. MENEGHESSO, A. CHINI, E. ZANONI, C. CANALI, “DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues”, MICROELECTRONICS RELIABILITY, Vol. 45, pp. 1585-1592, 2005.
12. G. VERZELLESI, BASILE A.F., A. CAVALLINI, A. CASTALDINI, A. CHINI, C. CANALI, "Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 52, pp. 594-602, 2005.
13. A. CHINI, D. BUTTARI, R. COFFIE, S. HEIKMAN, S. KELLER, U. K. MISHRA, "12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate", ELECTRONICS LETTERS, vol. 40, pp. 73-74, 2004.
14. A. CHINI, D. BUTTARI, R. COFFIE, L. SHEN, S. HEIKMAN, A. CHAKRABORTY, S. KELLER, U. K. MISHRA, "Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs", IEEE ELECTRON DEVICE LETTERS, vol. 25, pp. 229-231, 2004.
15. A. CHINI, J. WITTICH, S. HEIKMAN, S. KELLER, S. P. DENBAARS, U. K. MISHRA, "Power and linearity characteristics of GaN MISFETs on sapphire substrate", IEEE ELECTRON DEVICE LETTERS, vol. 25, pp. 55-57, 2004.
16. HUILI XING, Y. DORA, A. CHINI, S. HEIKMAN, S. KELLER, U. K. MISHRA, "High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates", IEEE ELECTRON DEVICE LETTERS, vol. 25, pp. 161-163, 2004.
17. L. SHEN, R. COFFIE, D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, A. CHINI, S. KELLER, S.P. DENBAARS, AND U.K. MISHRA, "Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design", JOURNAL OF ELECTRONIC MATERIALS, pp. 422-425, 2004.
18. G. MENEGHESSO, G. VERZELLESI, R. PIEROBON, F. RAMPAZZO, A. CHINI, U. K. MISHRA, C. CANALI, E. ZANONI, "Surface-related drain current dispersion effects in AlGaN-GaN HEMTs", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 51, pp. 1554-1561, 2004.
19. L. SHEN, R. COFFIE, D. BUTTARI, S. HEIKMAN, A. CHAKRABORTY, A. CHINI, S. KELLER, S. P. DENBAARS, U. K. MISHRA, "High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation", IEEE ELECTRON DEVICE LETTERS, vol. 25, pp. 7-9, 2004.
20. H. XU, C. SANABRIA, A. CHINI, S. KELLER, U. K. MISHRA, R. A. YORK, "A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier", IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 14, pp. 262-264, 2004.
21. A. CHINI, R. COFFIE, G. MENEGHESSO, E. ZANONI, D. BUTTARI, S. HEIKMAN, S. KELLER, U. K. MISHRA, "2.1 A/mm current density AlGaN/GaN HEMT", ELECTRONICS LETTERS, vol. 39, pp. 625-626, 2003.
22. R. COFFIE, L. SHEN, G. PARISH, A. CHINI, D. BUTTARI, S. HEIKMAN, S. KELLER, U. K. MISHRA, "Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz", ELECTRONICS LETTERS, vol. 39, pp. 1419-1420, 2003.
23. D. BUTTARI, A. CHINI, T. PALACIOS, R. COFFIE, L. SHEN, H. XING, S. HEIKMAN, L. MCCARTHY, A. CHAKRABORTY, S. KELLER, U. K. MISHRA, "Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures", APPLIED PHYSICS LETTERS, vol. 83, pp. 4779-4781, 2003.
24. G. MENEGHESSO, A. CHINI, M. MARETTO, E. ZANONI, "Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 50, pp. 324-332, 2003.
25. V. PAIDI, SHOUXUAN XIE, R. COFFIE, B. MORAN, S. HEIKMAN, S. KELLER, A. CHINI, S. P. DENBAARS, U. K. MISHRA, S. LONG, M. J. W. RODWELL, "High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 51, pp. 643-652, 2003.
26. SHOUXUAN XIE, V. PAIDI, R. COFFIE, S. KELLER, S. HEIKMAN, B. MORAN, A. CHINI, S. P. DENBAARS, U. K. MISHRA, S. LONG, M. J. W. RODWELL, "High-linearity class B power amplifiers in GaN HEMT technology", IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 13, pp. 284-286, 2003.
27. D. BUTTARI, A. CHINI, G. MENEGHESSO, E. ZANONI, P. CHAVARKAR, R. COFFIE, N. Q. ZHANG, S. HEIKMAN, L. SHEN, H. XING, C. ZHENG, U. K. MISHRA, "Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs", IEEE ELECTRON DEVICE LETTERS, vol. 23, pp. 118-120, 2002.
28. D. BUTTARI, A. CHINI, G. MENEGHESSO, E. ZANONI, B. MORAN, S. HEIKMAN, N. Q. ZHANG, L. SHEN, R. COFFIE, S. P. DENBAARS, U. K. MISHRA, "Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs", IEEE ELECTRON DEVICE LETTERS, vol. 23, pp. 76-78, 2002.
29. R. COFFIE, D. BUTTARI, S. HEIKMAN, S. KELLER, A. CHINI, L. SHEN, U. K. MISHRA, "p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)", IEEE ELECTRON DEVICE LETTERS, vol. 23, pp. 588-590, 2002.
30. N. ARMANI, V. GRILLO, G. SALVIATI, M. MANFREDI, M. PAVESI, A. CHINI, G. MENEGHESSO, E. ZANONI, "Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies", JOURNAL OF APPLIED PHYSICS, vol. 92, pp. 2401-2405, 2002.
31. D. BUTTARI, A. CHINI, G. MENEGHESSO, E. ZANONI, D. SAWDAI, D. PAVLIDIS, S. S. H. HSU, "Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs", IEEE ELECTRON DEVICE LETTERS, vol. 22, pp. 197-199, 2001.
32. G. MENEGHESSO, A. CHINI, E. ZANONI, "Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs", MICROELECTRONICS RELIABILITY. vol. 41, pp. 1579-1584, 2001.
33. G. MENEGHESSO, A. CHINI, G. VERZELLESI, A. CAVALLINI, C. CANALI, E. ZANONI, "Trap characterization in buried-gate n-channel 6H-SiC JFETs", IEEE ELECTRON DEVICE LETTERS, vol. 22, pp. 432-434, 2001.
34. G. MENEGHESSO, R. LUISE, D. BUTTARI, A. CHINI, H. YOKOYAMA, T. SUEMITSU, E. ZANONI, "Parasitic effects and long term stability of InP-based HEMTs", MICROELECTRONICS RELIABILITY, vol. 40, pp. 1715-1720, 2000.