PowDeR/Projects/FIRB-RF - MIUR FIRB 2005 - Revision history

AChini at 09:42, 20 May 2008

2008-05-20T09:42:07Z

← Older revision		Revision as of 09:42, 20 May 2008
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	*SELEX Sistemi Integrati		*SELEX Sistemi Integrati

	*Descrizione della Ricerca eseguita e dei risultati ottenuti		===Research Activity===

			===Publications===

AChini at 09:40, 20 May 2008

2008-05-20T09:40:17Z

← Older revision		Revision as of 09:40, 20 May 2008
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	<center>Responsabile Scientifico dell'Unità di Ricerca:</center>		<center>Responsabile Scientifico dell'Unità di Ricerca:</center>
	<center>''CHINI Alessandro''</center><br>		<center>''CHINI Alessandro''</center><br>

			__TOC__

	===Project summary and keywords===		===Project summary and keywords===

Achini at 14:08, 19 May 2008

2008-05-19T14:08:03Z

← Older revision		Revision as of 14:08, 19 May 2008
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	===Participants list===		===Participants list===
	~~'''~~Universita' degli Studi di ROMA"Tor Vergata" Dip. INGEGNERIA ELETTRONICA~~'''~~ including:		*Universita' degli Studi di ROMA "Tor Vergata" Dip. INGEGNERIA ELETTRONICA including:
	Politecnico di Torino		Politecnico di Torino

	~~'''~~Universita' degli Studi di MODENA e REGGIO EMILIA Dip. INGEGNERIA DELL'INFORMAZIONE~~'''~~ including:		*Universita' degli Studi di MODENA e REGGIO EMILIA Dip. INGEGNERIA DELL'INFORMAZIONE including:
	Università degli Studi di Padova		Università degli Studi di Padova

	~~'''~~Consiglio Nazionale delle Ricerche (CNR)~~'''~~ including:		*Consiglio Nazionale delle Ricerche (CNR) including:
	Istituto per la Microelettronica e i Microsistemi - sede di Catania		Istituto per la Microelettronica e i Microsistemi - sede di Catania
	Istituto per la Microelettronica e i Microsistemi - sezione di Lecce		Istituto per la Microelettronica e i Microsistemi - sezione di Lecce
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	Istituto di Fotonica e Nanotecnologie - Roma		Istituto di Fotonica e Nanotecnologie - Roma

	~~'''~~Thales Alenia Space Italia S.p.A. Unità Operativa Tecnologie di Microelettronica~~'''~~		*Thales Alenia Space Italia S.p.A. Unità Operativa Tecnologie di Microelettronica

	~~'''~~Universita' degli Studi di PERUGIA Dip. INGEGNERIA ELETTRONICA E DELL'INFORMAZIONE~~'''~~		*Universita' degli Studi di PERUGIA Dip. INGEGNERIA ELETTRONICA E DELL'INFORMAZIONE

	~~'''~~SELEX Sistemi Integrati~~'''~~		*SELEX Sistemi Integrati

			*Descrizione della Ricerca eseguita e dei risultati ottenuti
	~~'''~~Descrizione della Ricerca eseguita e dei risultati ottenuti~~'''~~

Achini at 13:54, 19 May 2008

2008-05-19T13:54:23Z

Achini at 13:52, 19 May 2008

2008-05-19T13:52:39Z

← Older revision		Revision as of 13:52, 19 May 2008
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	WP3.3: Design techniques for realizing active analog subsystems		WP3.3: Design techniques for realizing active analog subsystems

			===Participants list===
			Universita' degli Studi di ROMA"Tor Vergata" Dip. INGEGNERIA ELETTRONICA including:
			Politecnico di Torino

			Universita' degli Studi di MODENA e REGGIO EMILIA Dip. INGEGNERIA DELL'INFORMAZIONE including:
			Università degli Studi di Padova

			Consiglio Nazionale delle Ricerche (CNR) including:
			Istituto per la Microelettronica e i Microsistemi - sede di Catania
			Istituto per la Microelettronica e i Microsistemi - sezione di Lecce
			Istituto Nazionale di Fisica della Materia – Laboratorio Nazionale di Nanotecnologie (NNL)
			Istituto di Fotonica e Nanotecnologie - Roma

			Thales Alenia Space Italia S.p.A. Unità Operativa Tecnologie di Microelettronica

			Universita' degli Studi di PERUGIA Dip. INGEGNERIA ELETTRONICA E DELL'INFORMAZIONE

			SELEX Sistemi Integrati


	'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''		'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''

Achini at 13:51, 19 May 2008

2008-05-19T13:51:43Z

← Older revision		Revision as of 13:51, 19 May 2008
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	Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).		Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).

	Line 1		'''Line 1'''<br>
	WP1.1: Development of a PHEMT GaAs technology (critical lithography 0.15 μm) for low noise receiver components and relative demonstrators		WP1.1: Development of a PHEMT GaAs technology (critical lithography 0.15 μm) for low noise receiver components and relative demonstrators
	WP1.2: Development of a GaN technology (critical lithography 0.15 μm) for high power components and relative demonstrators		WP1.2: Development of a GaN technology (critical lithography 0.15 μm) for high power components and relative demonstrators
	WP1.3: Development of technologies for the realization of S.I. SiC substrates.		WP1.3: Development of technologies for the realization of S.I. SiC substrates.

	Line 2		'''Line 2'''<br>
	WP2.1: Development of GaAs and GaN MEMS and relative demonstrators		WP2.1: Development of GaAs and GaN MEMS and relative demonstrators
	WP2.2: Development of ceramic material based MEMS and relative demonstrators		WP2.2: Development of ceramic material based MEMS and relative demonstrators
	WP2.3: Design techniques for realizing RF MEMS devices		WP2.3: Design techniques for realizing RF MEMS devices

	Line 3		'''Line 3'''<br>
	WP3.1: Development of characterization and modeling techniques for active devices		WP3.1: Development of characterization and modeling techniques for active devices
	WP3.2: Development of characterization and modeling techniques for RF MEMS devices		WP3.2: Development of characterization and modeling techniques for RF MEMS devices

Achini at 13:51, 19 May 2008

2008-05-19T13:51:05Z

← Older revision		Revision as of 13:51, 19 May 2008
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	The research project, whose length is 36 months, has been divided in the following three research lines:		The research project, whose length is 36 months, has been divided in the following three research lines:

	1. Enabling technologies		# Enabling technologies
	2. RF MEMS		# RF MEMS
	3. Characterization and modeling techniques		# Characterization and modeling techniques

	Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).		Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).

Achini at 13:50, 19 May 2008

2008-05-19T13:50:36Z

← Older revision		Revision as of 13:50, 19 May 2008
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	The proposal has the aim of investigating a certain number of issues, in tight cooperation with the corresponding industrial program, which will allow to develop highly innovative systems comparable to international standards in the field of telecommunication systems, wideband sensors and smart Microsystems. In particular, each group’s specific proficiency will allow to obtain the following goals:		The proposal has the aim of investigating a certain number of issues, in tight cooperation with the corresponding industrial program, which will allow to develop highly innovative systems comparable to international standards in the field of telecommunication systems, wideband sensors and smart Microsystems. In particular, each group’s specific proficiency will allow to obtain the following goals:

	* availability of PHEMT/MHEMT GaAs technology (critical lithography 0.15 μm) for low noise receiver components		* availability of PHEMT/MHEMT GaAs technology (critical lithography 0.15 μm) for low noise receiver components
	* availability of GaN technology (critical lithography 0.15 μm) for high power receiver components		* availability of GaN technology (critical lithography 0.15 μm) for high power receiver components
	* availability Availability of GaN technology (critical lithography 0.15 μm) for high power receiver components		* availability Availability of GaN technology (critical lithography 0.15 μm) for high power receiver components
	* availability of GaAs, GaN/SiC and ceramic materials MEMS technology		* availability of GaAs, GaN/SiC and ceramic materials MEMS technology
	* availability of RF devices characterization and modeling techniques		* availability of RF devices characterization and modeling techniques
	* circuital design techniques for realizing analog and MEMS devices		* circuital design techniques for realizing analog and MEMS devices

	The research project, whose length is 36 months, has been divided in the following three research lines:		The research project, whose length is 36 months, has been divided in the following three research lines:

	1. Enabling technologies		1. Enabling technologies
	2. RF MEMS		2. RF MEMS
	3. Characterization and modeling techniques		3. Characterization and modeling techniques

	Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).		Lines 1 and 2 will develop the fundamental enabling technologies and the relative sub-techniques (GaAs and GaN technology with critical 150nm lithography) and the enabling components (microelectromechanical systems, MEMS) through which it will be possible to obtain totally reconfigurable wideband systems. Line 3, which embraces and integrates the previous two, will investigate characterization and modeling techniques, and also dedicated design techniques to optimally take advantage of such technologies. Each topic has consequently been divided in activities or workpackages (WP).

Achini at 13:49, 19 May 2008

2008-05-19T13:49:52Z

@@ Line 8: / Line 8: @@
 <center>Responsabile Scientifico dell'Unità di Ricerca:</center>
 <center>''CHINI Alessandro''</center><br>
 '''Descrizione della Ricerca eseguita e dei risultati ottenuti'''

Achini: New page: {{PowDeR}}
'''MIUR FIRB 2005 (2007/2010)'''

''Tecnologie abilitanti, caratterizzazione e modellistica''<...

2008-05-19T13:47:49Z

New page: {{PowDeR}} <center>'''MIUR FIRB 2005 (2007/2010)'''</center> <center>''Tecnologie abilitanti, caratterizzazione e modellistica''<...

New page

{{PowDeR}}

 <center>'''MIUR FIRB 2005 (2007/2010)'''</center> 
 <center>''Tecnologie abilitanti, caratterizzazione e modellistica''</center>
<center>''per componenti elettronici integrati riconfigurabili a banda larga per alta frequenza.''</center> 
<center>Coordinatore Scientifico del programma di ricerca:</center>
<center>''LIMITI Ernesto''</center> 
<center>Responsabile Scientifico dell'Unità di Ricerca:</center>
<center>''CHINI Alessandro''</center> 

'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''

← Older revision		Revision as of 13:54, 19 May 2008
Line 46:		Line 46:

	===Participants list===		===Participants list===
	Universita' degli Studi di ROMA"Tor Vergata" Dip. INGEGNERIA ELETTRONICA including:		'''Universita' degli Studi di ROMA"Tor Vergata" Dip. INGEGNERIA ELETTRONICA''' including:
	Politecnico di Torino		Politecnico di Torino

	Universita' degli Studi di MODENA e REGGIO EMILIA Dip. INGEGNERIA DELL'INFORMAZIONE including:		'''Universita' degli Studi di MODENA e REGGIO EMILIA Dip. INGEGNERIA DELL'INFORMAZIONE''' including:
	Università degli Studi di Padova		Università degli Studi di Padova

	Consiglio Nazionale delle Ricerche (CNR) including:		'''Consiglio Nazionale delle Ricerche (CNR)''' including:
	Istituto per la Microelettronica e i Microsistemi - sede di Catania		Istituto per la Microelettronica e i Microsistemi - sede di Catania
	Istituto per la Microelettronica e i Microsistemi - sezione di Lecce		Istituto per la Microelettronica e i Microsistemi - sezione di Lecce
	Istituto Nazionale di Fisica della Materia – Laboratorio Nazionale di Nanotecnologie (NNL)		Istituto Nazionale di Fisica della Materia – Laboratorio Nazionale di Nanotecnologie (NNL)
	Istituto di Fotonica e Nanotecnologie - Roma		Istituto di Fotonica e Nanotecnologie - Roma

	Thales Alenia Space Italia S.p.A. Unità Operativa Tecnologie di Microelettronica		'''Thales Alenia Space Italia S.p.A. Unità Operativa Tecnologie di Microelettronica'''

	Universita' degli Studi di PERUGIA Dip. INGEGNERIA ELETTRONICA E DELL'INFORMAZIONE		'''Universita' degli Studi di PERUGIA Dip. INGEGNERIA ELETTRONICA E DELL'INFORMAZIONE'''

	SELEX Sistemi Integrati		'''SELEX Sistemi Integrati'''


	'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''		'''Descrizione della Ricerca eseguita e dei risultati ottenuti'''

PowDeR/Projects/FIRB-RF - MIUR FIRB 2005 - Revision history

AChini at 09:42, 20 May 2008

AChini at 09:40, 20 May 2008

Achini at 14:08, 19 May 2008

Achini at 13:54, 19 May 2008

Achini at 13:52, 19 May 2008

Achini at 13:51, 19 May 2008

Achini at 13:51, 19 May 2008

Achini at 13:50, 19 May 2008

Achini at 13:49, 19 May 2008

Achini: New page: {{PowDeR}} '''MIUR FIRB 2005 (2007/2010)''' ''Tecnologie abilitanti, caratterizzazione e modellistica''<...

Achini: New page: {{PowDeR}}
'''MIUR FIRB 2005 (2007/2010)'''

''Tecnologie abilitanti, caratterizzazione e modellistica''<...