PowDeR/Lab Capabilities - Revision history

AChini at 11:58, 20 May 2008

2008-05-20T11:58:03Z

← Older revision		Revision as of 11:58, 20 May 2008
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	{{PowDeR}}		{{PowDeR}}
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AChini at 11:57, 20 May 2008

2008-05-20T11:57:01Z

← Older revision		Revision as of 11:57, 20 May 2008
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			__TOC__

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	==Measurement Systems==		==Measurement Systems==

	*'''On wafer Continuous-Wave Load and Source Pull measurements at 2GHz~~'''~~		===On wafer Continuous-Wave Load and Source Pull measurements at 2GHz===

	Our Lab is equipped with a Load and Source Pull measurements sistem based on a PAF Dragon Switch-Box, an Agilent Vector Network Analyzer and two manual Maury Microwave tuners. Currently we are able to measure On-Wafer Continuous Wave RF performance at 2GHz but the system can easily be extended up to 12GHz. The system is also used for short term Reliability RF Stress test since it is equipped with a Thermal Chuck that allows to test the devices up to 200°C.		Our Lab is equipped with a Load and Source Pull measurements sistem based on a PAF Dragon Switch-Box, an Agilent Vector Network Analyzer and two manual Maury Microwave tuners. Currently we are able to measure On-Wafer Continuous Wave RF performance at 2GHz but the system can easily be extended up to 12GHz. The system is also used for short term Reliability RF Stress test since it is equipped with a Thermal Chuck that allows to test the devices up to 200°C.

	[[Image:powder_loadpull1.jpg\|800px\|center\|]]<br><br>		[[Image:powder_loadpull1.jpg\|800px\|center\|]]<div style="clear:both;"></div>


	*'''Pulsed I-V measurements down to 80ns~~'''~~		===Pulsed I-V measurements down to 80ns===
	Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions allows to quantify the amount of trapping phenomena in the device.		Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions allows to quantify the amount of trapping phenomena in the device.

	*'''Current Deep Level Transient Spectroscopy measurements~~'''~~		===Current Deep Level Transient Spectroscopy measurements===

	==Measurement Instruments==		==Measurement Instruments==

AChini at 11:54, 20 May 2008

2008-05-20T11:54:07Z

Achini at 09:40, 12 May 2008

2008-05-12T09:40:11Z

← Older revision		Revision as of 09:40, 12 May 2008
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	*'''Pulsed I-V measurements down to 80ns'''		*'''Pulsed I-V measurements down to 80ns'''
	Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions ~~allow~~ to quantify the amount of trapping phenomena in the device.		Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions allows to quantify the amount of trapping phenomena in the device.

	*'''Current Deep Level Transient Spectroscopy measurements'''		*'''Current Deep Level Transient Spectroscopy measurements'''

Achini at 08:51, 12 May 2008

2008-05-12T08:51:49Z

← Older revision		Revision as of 08:51, 12 May 2008
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	*'''Pulsed I-V measurements down to 80ns'''		*'''Pulsed I-V measurements down to 80ns'''
	Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics.		Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics. Our lab is equipped with a Pulsed I-V measurement system that allows to measure device characteristics down to pulse widths of 80ns. Comparing the I-V characteristics obtained with fast pulses with those measured under DC conditions allow to quantify the amount of trapping phenomena in the device.

	*'''Current Deep Level Transient Spectroscopy measurements'''		*'''Current Deep Level Transient Spectroscopy measurements'''

Achini at 08:48, 12 May 2008

2008-05-12T08:48:52Z

← Older revision		Revision as of 08:48, 12 May 2008
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	*'''Pulsed I-V measurements down to 80ns'''		*'''Pulsed I-V measurements down to 80ns'''
			Compound semiconductor devices largely outperform silicon ones but their performance, especially in the early stage of their development, can be far from being stable and reliable. HEMT devices suffer from trapping phenomena that slow down the transistor capability to modulate its drain current. During RF power sweep this phenomena yield low output power and poor efficiency but just from a RF power sweep is quite difficult to evaluate the impact of trapping phenomena on device characteristics.

	*'''Current Deep Level Transient Spectroscopy measurements'''		*'''Current Deep Level Transient Spectroscopy measurements'''

Achini at 14:37, 9 May 2008

2008-05-09T14:37:31Z

← Older revision		Revision as of 14:37, 9 May 2008
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	'''E4418B EPM Series Single-Channel Power Meter'''<br>		'''E4418B EPM Series Single-Channel Power Meter'''<br>
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<br><br><br><br><br><br><br><br>		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<br><br><br><br><br><br><br><br><br><br><br><br>

	[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]		[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]

Achini at 14:37, 9 May 2008

2008-05-09T14:37:08Z

← Older revision		Revision as of 14:37, 9 May 2008
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	[[Image:PowDeR_E4418B-lg.jpg\|300px\|left\|]]		[[Image:PowDeR_E4418B-lg.jpg\|300px\|left\|]]
	'''E4418B EPM Series Single-Channel Power Meter'''		'''E4418B EPM Series Single-Channel Power Meter'''<br>
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<br><br><br><br><br><br><br><br>		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<br><br><br><br><br><br><br><br>

Achini at 14:36, 9 May 2008

2008-05-09T14:36:47Z

← Older revision		Revision as of 14:36, 9 May 2008
Line 21:		Line 21:
	[[Image:PowDeR_E4418B-lg.jpg\|300px\|left\|]]		[[Image:PowDeR_E4418B-lg.jpg\|300px\|left\|]]
	'''E4418B EPM Series Single-Channel Power Meter'''		'''E4418B EPM Series Single-Channel Power Meter'''

	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<br><br><br><br><br><br><br><br>

	[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]		[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]

Achini at 14:36, 9 May 2008

2008-05-09T14:36:11Z

← Older revision		Revision as of 14:36, 9 May 2008
Line 22:		Line 22:
	'''E4418B EPM Series Single-Channel Power Meter'''		'''E4418B EPM Series Single-Channel Power Meter'''

	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL ~~Manual~~]		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]
			[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]

	[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]		[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]

← Older revision		Revision as of 11:54, 20 May 2008
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	[[Image:PowDeR_N5230Alarge.jpg\|300px\|left\|]]		[[Image:PowDeR_N5230Alarge.jpg\|300px\|left\|]]
	'''Agilent N5230A PNA-L Network Analyzer, 2-ports, up to 13.5 GHz'''<br>		'''Agilent N5230A PNA-L Network Analyzer, 2-ports, up to 13.5 GHz'''<br>
	[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=61114&lc=eng&cc=US&nfr=-536902643.536883638.08 Quick Reference Guide]<br><br>~~<br><br><br><br><br><br><br><br><br>~~		[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=61114&lc=eng&cc=US&nfr=-536902643.536883638.08 Quick Reference Guide]<div style="clear:both;"></div>


	[[Image:PowDeR_E4418B-lg.jpg\|300px\|left\|]]		[[Image:PowDeR_E4418B-lg.jpg\|300px\|left\|]]
	'''E4418B EPM Series Single-Channel Power Meter'''<br>		'''E4418B EPM Series Single-Channel Power Meter'''<br>
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000774-1%3Aepsg%3Aman&pubno=E4418-90032&ltype=&ctype=AGILENT_EDITORIAL E4418B RF Power Meter User's Guide ]
	[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<br><~~br><br><br><br><br><br><br><br><br><br><br~~>		[http://www.home.agilent.com/agilent/redirector.jspx?action=obs&nid=-536902901.0.00&lc=eng&cc=US&ckey=1000000773-1%3Aepsg%3Aman&pubno=E4418-90029&ltype=&ctype=AGILENT_EDITORIAL EPM RF Power Meter Programming Guide ]<div style="clear:both;"></div>

	[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]		[[Image:PowDeR_hp_33250A_800.jpg\|300px\|left\|]]
	'''Agilent 33250A Function / Arbitrary Waveform Generator, 80 MHz'''<br>		'''Agilent 33250A Function / Arbitrary Waveform Generator, 80 MHz'''<br>
	[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237965&lc=eng&cc=US&nfr=-536902257.536881980.07 Quick Reference Guide] [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237975&lc=eng&cc=US&nfr=-536902257.536881980.07 User's Guide]<br><~~br><br><br><br><br><br><br~~>		[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237965&lc=eng&cc=US&nfr=-536902257.536881980.07 Quick Reference Guide] [http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&ckey=237975&lc=eng&cc=US&nfr=-536902257.536881980.07 User's Guide]<div style="clear:both;"></div>

	[[Image:PowDeR_BR_8114A_white.jpg\|300px\|left\|]]		[[Image:PowDeR_BR_8114A_white.jpg\|300px\|left\|]]
	'''Agilent 8114A High Power Pulse Generator, 100 V / 2 A'''<br>		'''Agilent 8114A High Power Pulse Generator, 100 V / 2 A'''<br>
	[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&cc=US&lc=eng&ckey=410642&nid=-536902258.536881953.07&pid=1000001735%3Aepsg%3Apro 8114A Pulse Generator User Guide]<br><~~br><br><br><br><br><br><br~~>		[http://www.home.agilent.com/agilent/redirector.jspx?action=ref&cname=AGILENT_EDITORIAL&cc=US&lc=eng&ckey=410642&nid=-536902258.536881953.07&pid=1000001735%3Aepsg%3Apro 8114A Pulse Generator User Guide]<div style="clear:both;"></div>