Luca Morassi - Revision history

83667 at 09:38, 27 November 2012

2012-11-27T09:38:05Z

← Older revision		Revision as of 09:38, 27 November 2012
Line 23:		Line 23:
	[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012		[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012

			[J5] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.12, pp.3651-3654, Dec. 2012
	----		----

Line 48:		Line 48:
	[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012		[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012

			[C11] '''Morassi, L.'''; Veksler, D.; Bersuker, G.; Verzellesi, G.; , " Interface-trap characterization at III-V/high-k interface: a fast and generalized method based on High-Low frequency CV," 21st European Workshop on Heterostructure Technology (HETECH), Barcelona, Spain, Nov 5-7, 2012
	----		----

83667 at 10:32, 23 July 2012

2012-07-23T10:32:25Z

← Older revision		Revision as of 10:32, 23 July 2012
Line 45:		Line 45:

	[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012		[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012

			[C10] Kim, T.-W.; Hill, R. J. W.; Young, C. D.; Veksler, D.; '''Morassi, L.'''; Oktybrshky, S.; Oh, J.; Kang, C.Y.; Kim, D.-H; del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.; , "InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax," VLSI Technology (VLSIT), 2012 Symposium on , vol., no., pp.179-180, 12-14 June 2012

83667 at 08:53, 5 July 2012

2012-07-05T08:53:24Z

← Older revision		Revision as of 08:53, 5 July 2012
Line 48:		Line 48:

	----		----


	Scientific activities:		Scientific activities:
Line 59:		Line 58:

	Participation at the conference: 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC): presentation of the works [C8].		Participation at the conference: 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC): presentation of the works [C8].


	----		----

83667 at 08:53, 5 July 2012

2012-07-05T08:53:06Z

← Older revision		Revision as of 08:53, 5 July 2012
Line 45:		Line 45:

	[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012		[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012


	----		----


	Scientific activities:		Scientific activities:

83667 at 08:52, 5 July 2012

2012-07-05T08:52:36Z

← Older revision		Revision as of 08:52, 5 July 2012
Line 45:		Line 45:

	[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012		[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012

	----		----

83667 at 08:52, 5 July 2012

2012-07-05T08:52:07Z

← Older revision		Revision as of 08:52, 5 July 2012
Line 42:		Line 42:
	[C7] '''Morassi, L.'''; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011		[C7] '''Morassi, L.'''; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

			[C8] '''Morassi, L.'''; Veksler, D.; Bersuker, G.; Verzellesi, G.; , "Generalized High-Low frequency CV technique for interface-trap characterization at III-V/high-k interface," 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), Porquerolles, France, May 30 - Jun 1, 2012

			[C9] Mohamad Isa, M.; Saguatti, D.; Chini, A.; '''Morassi, L.'''; Verzellesi, G.; Missous, M.;, "Field-Plated InGaAs-InAlAs pHEMTs with 18-V off-state breakdown voltage and 35-GHz fmax," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, May 28-30, 2012
	----		----

Line 53:		Line 55:
	Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].		Participation at the conference: 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011): presentation of the works [C6] and [C7].

			Participation at the conference: 11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC): presentation of the works [C8].

	----		----

83667 at 10:52, 28 March 2012

2012-03-28T10:52:06Z

← Older revision		Revision as of 10:52, 28 March 2012
Line 19:		Line 19:
	[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011		[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011

	[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011		[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; , “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011

	[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012		[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012

83667 at 10:51, 28 March 2012

2012-03-28T10:51:47Z

← Older revision		Revision as of 10:51, 28 March 2012
Line 19:		Line 19:
	[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011		[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011

	[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; , ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011		[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011

	[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012		[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012

83667 at 10:45, 28 March 2012

2012-03-28T10:45:44Z

← Older revision		Revision as of 10:45, 28 March 2012
Line 19:		Line 19:
	[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011		[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011

	[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011		[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; , ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011

	[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012		[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012
Line 28:		Line 28:
	List of publications in international conferences:		List of publications in international conferences:

	[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009		[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; , "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009

	[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010		[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010

	[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009		[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; , "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009

	[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010		[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010

	[C5] '''L. ~~Morassi~~''', A. ~~Padovani~~, G. ~~Verzellesi~~, D. ~~Veksler~~, I. ~~Ok and~~ G. ~~Bersuker~~, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010		[C5] ''' Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Ok, I.; Bersuker, G.; , “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010

	[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011		[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

83667 at 10:42, 28 March 2012

2012-03-28T10:42:11Z

← Older revision		Revision as of 10:42, 28 March 2012
Line 15:		Line 15:
	List of publications in journals:		List of publications in journals:

	[J1] A. ~~Padovani,~~ '''L. ~~Morassi~~''', N. ~~Raghavan, L.~~ Larcher, L. Wenhu~~, K. L.~~ Pey, ~~and~~ G. ~~Bersuker~~, "A Physical Model for Post-Breakdown Digital Gate Current Noise"~~, IEEE~~ Electron Device Letters, vol. 31, no. 9, pp.1032-1034, ~~Sep~~. 2010.		[J1] Padovani, A.; '''Morassi, L.'''; Raghavan, N.; Larcher, L.; Wenhu Liu; Kin Leong Pey; Bersuker, G.; , "A Physical Model for Post-Breakdown Digital Gate Current Noise," Electron Device Letters, IEEE , vol.31, no.9, pp.1032-1034, Sept. 2010

	[J2] '''L. ~~Morassi~~''', A. ~~Padovani~~, G. ~~Verzellesi~~, D. ~~Veksler, I.~~ Ok, G. ~~Bersuker~~, "Interface-Trap Effects in Inversion-Type Enhancement-Mode ~~InGaAs/ZrO2~~ N-Channel MOSFETs", IEEE Transactions on ~~Electron Devices~~, vol. 58, no. 1, pp.107-114, Jan. 2011.		[J2] '''Morassi, L.'''; Padovani, A.; Verzellesi, G.; Veksler, D.; Injo Ok; Bersuker, G.; , "Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs," Electron Devices, IEEE Transactions on , vol.58, no.1, pp.107-114, Jan. 2011

	[J3] G. ~~Bersuker~~, D. ~~Veksler~~, C. D. ~~Young~~, H. ~~Park~~, W. ~~Taylor~~, P. ~~Kirsch~~, R~~, Jammy,~~ '''L. ~~Morassi~~''', A. ~~Padovani~~, ~~and~~ L. ~~Larcher,~~ “Connecting electrical and structural dielectric ~~characteristics”~~, International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011.		[J3] Bersuker, G.; Veksler, D.; Young, C.D.; Park, H.; Taylor, W.; Kirsch, P.; Jammy, R.; ''' Morassi, L.'''; Padovani, A.; Larcher, L.; “Connecting electrical and structural dielectric characteristics,” International Journal of High Speed Electronics and Systems (IJHSES), vol. 20(1), pp. 65-79, 2011

	[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012		[J4] '''Morassi, L.'''; Verzellesi, G.; Zhao, H.; Lee, J. C.; Veksler, D.; Bersuker, G.; , "Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs," Electron Devices, IEEE Transactions on , vol.59, no.4, pp.1068-1075, April 2012
Line 28:		Line 28:
	List of publications in international conferences:		List of publications in international conferences:

	[C1] '''L. ~~Morassi~~''', L. ~~Larcher~~, L. ~~Pantisano~~, A. ~~Padovani~~, R. ~~Degreave~~, M. B. ~~Zahid~~, ~~and~~ B. J. ~~O'Sullivan,~~ "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing", 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009.		[C1] '''Morassi, L.'''; Larcher, L.; Pantisano, L.; Padovani, A.; Degreave, R.; Zahid, M. B.; O'Sullivan, B. J.; "Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing," 41th International Conference on Solid State Devices and Materials (SSDM2009), Sendai, Japan, 2009

	[C2] G. ~~Bersuker~~, D. ~~Heh~~, C. D. ~~Young,~~ '''L. ~~Morassi~~''', A. ~~Padovani~~, L. ~~Larcher~~, K. S. ~~Yew~~, Y. C. ~~Ong~~, D. S. ~~Ang~~, K. L. ~~Pey~~, ~~and~~ W. ~~Taylor~~, "Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer"~~, IEEE International~~ Reliability Physics Symposium~~, Anaheim~~ (CA), ~~USA~~, ~~May 2-6~~, ~~2010~~, pp. 373-378.		[C2] Bersuker, G.; Heh, D.; Young, C.D.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Yew, K.S.; Ong, Y.C.; Ang, D.S.; Pey, K.L.; Taylor, W.; , "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.373-378, 2-6 May 2010

	[C3] G. ~~Bersuker~~, D. ~~Veksler~~, C. D. ~~Young~~, H. ~~Park,~~ '''L. ~~Morassi~~''', A. ~~Padovani~~, L. ~~Larcher~~, W. ~~Taylor~~, P. D. ~~Kirsch~~, ~~and~~ R. ~~Jammy,~~ "Connecting electrical and structural dielectric characteristics", Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009.		[C3] Bersuker, G.; Veksler, D.; Young, C. D.; Park, H.; '''Morassi, L.'''; Padovani, A.; Larcher, L.; Taylor, W.; Kirsch, P. D.; Jammy, R.; "Connecting electrical and structural dielectric characteristics," Advanced Workshop on 'Frontiers in Electronics' (WOFE 2009), Puerto Rico, Dec. 13-16, 2009

	[C4] '''L. ~~Morassi~~''', G. ~~Verzellesi~~, A. ~~Padovani~~, L. ~~Larcher~~, P. ~~Pavan~~, D. ~~Veksler, I.~~ Ok, ~~and~~ G. ~~Bersuker~~, "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs"~~, IEEE International~~ Reliability Physics Symposium~~, Anaheim~~ (CA), ~~USA~~, ~~May 2-6~~, ~~2010~~, pp. 532-535.		[C4] '''Morassi, L.'''; Verzellesi, G.; Padovani, A.; Larcher, L.; Pavan, P.; Veksler, D.; Injo Ok; Bersuker, G.; , "Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs," Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.532-535, 2-6 May 2010

	[C5] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010.		[C5] '''L. Morassi''', A. Padovani, G. Verzellesi, D. Veksler, I. Ok and G. Bersuker, “Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics”, 19th European Workshop on Heterostructure Technology (HETEC2010), Crete, Greece, Oct. 18-20, 2010

	[C6] '''L. ~~Morassi~~''', G. ~~Verzellesi~~, P. ~~Pavan~~, D. ~~Veksler~~, I. ~~Ok, H.~~ Zhao, J. C. ~~Lee and~~ G. ~~Bersuker~~, ~~“Experimental~~/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate ~~dielectric”~~, 23rd International Conference on Indium Phosphide and Related Materials ~~(IPRM2011)~~, ~~Berlin~~, ~~Germany~~, ~~May~~ 22-26, 2011~~, pp. 103-105.~~		[C6] '''Morassi, L.'''; Verzellesi, G.; Pavan, P.; Veksler, D.; Ok, I.; Han Zhao; Lee, J.C.; Bersuker, G.; , "Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011

	[C7] '''L. ~~Morassi~~''', G. ~~Verzellesi~~, L. ~~Larcher, I. Ok~~, ~~H. Zhao and~~ J. C. ~~Lee~~, ~~“Errors~~ affecting split-CV mobility measurements in InGaAs MOS-~~HEMTs”~~, 23rd International Conference on Indium Phosphide and Related Materials ~~(IPRM2011)~~, ~~Berlin~~, ~~Germany~~, ~~May~~ 22-26, 2011~~, pp. 327-329.~~		[C7] '''Morassi, L.'''; Verzellesi, G.; Larcher, L.; Han Zhao; Lee, J.C.; , "Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs," Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials , vol., no., pp.1-3, 22-26 May 2011