https://web.ing.unimo.it/wiki/api.php?action=feedcontributions&user=32490&feedformat=atomWeb - User contributions [en]2024-03-28T16:43:54ZUser contributionsMediaWiki 1.34.2https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7742Michele ESPOSTO2011-01-14T18:44:40Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''EMC''' || UC Santa Barbara (California, USA) || 22/24 June, 2011 || 31 January, 2011 || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''DRC''' || UC Santa Barbara (California, USA) || 20/23 June, 2011 || 8 March, 2011 || [http://drc.ee.psu.edu/]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || - || -<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || 2 March, 2011 || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || - || - || - || -<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || Savannah (Georgia, USA) || February, 2011 || - || -<br />
|-<br />
| '''ESREF''' || Bordeaux (France) || 3/7 October, 2011 || 14 March, 2011 || [http://esref2011.ims-bordeaux.fr/]<br />
|-<br />
| '''HETECH''' || Lille (France) || October, 2011 || - || -<br />
|-<br />
| '''ICPS''' || - || 2012 || - || -<br />
|-<br />
| '''Lester Eastman Conference''' || - || 2012 || - || -<br />
|-<br />
| '''IWN''' || Sapporo (Japan) || 14/19 October, 2012 || - || -<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom*at*ece.osu.edu, esposto.1*at*osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7710Michele ESPOSTO2010-12-24T03:20:47Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''EMC''' || UC Santa Barbara (California, USA) || 22/24 June, 2011 || 31 January, 2011 || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''DRC''' || UC Santa Barbara (California, USA) || 20/23 June, 2011 || - || [-]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || - || -<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || 2 March, 2011 || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || - || - || - || -<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || Savannah (Georgia, USA) || February, 2011 || - || -<br />
|-<br />
| '''ESREF''' || Bordeaux (France) || 3/7 October, 2011 || 14 March, 2011 || [http://esref2011.ims-bordeaux.fr/]<br />
|-<br />
| '''HETECH''' || Lille (France) || October, 2011 || - || -<br />
|-<br />
| '''ICPS''' || - || 2012 || - || -<br />
|-<br />
| '''Lester Eastman Conference''' || - || 2012 || - || -<br />
|-<br />
| '''IWN''' || Sapporo (Japan) || 14/19 October, 2012 || - || -<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto*at*unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom*at*ece.osu.edu, esposto.1*at*osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7692Michele ESPOSTO2010-12-05T19:03:35Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''EMC''' || UC Santa Barbara (California, USA) || 22/24 June, 2011 || 31 January, 2011 || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''DRC''' || UC Santa Barbara (California, USA) || 20/23 June, 2011 || - || [-]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || - || -<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || - || - || - || -<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || Savannah (Georgia, USA) || February, 2011 || - || -<br />
|-<br />
| '''ESREF''' || - || - || - || -<br />
|-<br />
| '''HETECH''' || Lille (France) || October, 2011 || - || -<br />
|-<br />
| '''ICPS''' || - || 2012 || - || -<br />
|-<br />
| '''Lester Eastman Conference''' || - || 2012 || - || -<br />
|-<br />
| '''IWN''' || Sapporo (Japan) || 14/19 October, 2012 || - || -<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto*at*unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom*at*ece.osu.edu, esposto.1*at*osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7663Michele ESPOSTO2010-11-12T03:45:13Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || - || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || - || -<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || - || - || - || -<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || Savannah (Georgia, USA) || February, 2011 || - || -<br />
|-<br />
| '''ESREF''' || - || - || - || -<br />
|-<br />
| '''HETECH''' || Lille (France) || October, 2011 || - || -<br />
|-<br />
| '''ICPS''' || - || 2012 || - || -<br />
|-<br />
| '''Lester Eastman Conference''' || - || 2012 || - || -<br />
|-<br />
| '''IWN''' || Sapporo (Japan) || 14/19 October, 2012 || - || -<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto*at*unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom*at*ece.osu.edu, esposto.1*at*osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7649Michele ESPOSTO2010-10-23T15:11:52Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || - || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || - || -<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || - || - || - || -<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || Savannah (Georgia, USA) || February, 2011 || - || -<br />
|-<br />
| '''ESREF''' || - || - || - || -<br />
|-<br />
| '''HETECH''' || Lille (France) || October, 2011 || - || -<br />
|-<br />
| '''ICPS''' || - || 2012 || - || -<br />
|-<br />
| '''Lester Eastman Conference''' || - || 2012 || - || -<br />
|-<br />
| '''IWN''' || Sapporo (Japan) || 14/19 October, 2012 || - || -<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7631Michele ESPOSTO2010-10-10T20:39:04Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || ?? || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || 12 February, 2011 || [http://www.eumweek.com/]<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || ?? || ??<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ESREF''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''HETECH''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ICPS''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''Lester Eastman Conference''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''IWN''' || ?? || 2012 || ?? || ??<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7625Michele ESPOSTO2010-10-02T03:15:23Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || ?? || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || ?? || ??<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || ?? || ??<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSDICE''' || Catania (Italy) || 29 May/1 June, 2011 || 25 February, 2011 || [http://wocsdice.imm.cnr.it/]<br />
|-<br />
| '''NAMBE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ESREF''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''HETECH''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ICPS''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''Lester Eastman Conference''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''IWN''' || ?? || 2012 || ?? || ??<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7604Michele ESPOSTO2010-09-24T02:36:08Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, October 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, October 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, September 2010 - IEEE proceeding. <br />
<br />
16) S. Krishnamoorty, D. N. Nath, F. Akyol, P. S. Park, '''M. Esposto''', and S. Rajan, "Polarization assisted GaN/InGaN/GaN tunnel junction", 2010 International Workshop on Nitride Semiconductors - IWN 2010, Tampa, September 2010.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Volume 50, Issues 9-11, Pages 1191-1906 (September-November 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || ?? || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || ?? || ??<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || ?? || ??<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''NAMBE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''WOCSDICE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ESREF''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''HETECH''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ICPS''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''Lester Eastman Conference''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''IWN''' || ?? || 2012 || ?? || ??<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7565Michele ESPOSTO2010-09-12T23:29:37Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, Oct. 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", accepted for oral presentation at the 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, Sep. 2010 - IEEE proceeding. <br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for publication on Elsevier, Microelectronics Reliability, Vol. 50, Special Issue: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || ?? || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || ?? || ??<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || ?? || ??<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''NAMBE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''WOCSDICE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ESREF''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''HETECH''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ICPS''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''Lester Eastman Conference''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''IWN''' || ?? || 2012 || ?? || ??<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7564Michele ESPOSTO2010-09-11T16:17:16Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, Oct. 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", accepted for oral presentation at the 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, Sep. 2010 - IEEE proceeding. <br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for publication on Elsevier, Microelectronics Reliability, Vol. 50, Special Issue: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || ?? || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || ?? || ??<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || ?? || ??<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''ICPS''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''NAMBE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''MRS Spring Meeting''' || San Francisco (California, USA) || 25/29 April, 2011 || 2 November, 2010 || [http://www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341]<br />
|-<br />
| '''WOCSEMMAD''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''WOCSDICE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ESREF''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''HETECH''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''Lester Eastman Conference''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''IWN''' || ?? || 2012 || ?? || ??<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7563Michele ESPOSTO2010-09-11T01:21:47Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, Oct. 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", accepted for oral presentation at the 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, Sep. 2010 - IEEE proceeding. <br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for publication on Elsevier, Microelectronics Reliability, Vol. 50, Special Issue: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010).<br />
<br />
----<br />
{|border="1"<br />
|+ '''Looking Forward...'''<br />
! scope="col" | Conference <br />
! scope="col" | Location<br />
! scope="col" | Date<br />
! scope="col" | Deadline<br />
! scope="col" | Website<br />
|-<br />
| '''DRC/EMC''' || UC Santa Barbara (California, USA) || 20/24 June, 2011 || ?? || [http://www.tms.org/Meetings/Specialty/EMC11/home.aspx]<br />
|-<br />
| '''ISCS''' || Berlin (Germany) || 22/26 May, 2011 || 14 January, 2011 || [http://www.csw2011.org/]<br />
|-<br />
| '''ESSDERC''' || Helsinki (Finland) || 12/16 September, 2011 || 11 April, 2011 || [http://www.essderc2011.org/]<br />
|-<br />
| '''EUMW''' || Manchester (UK) || 9/14 October, 2011 || ?? || ??<br />
|-<br />
| '''IEDM''' || Washington D.C. (USA) || 2/9 December, 2011 || ?? || ??<br />
|-<br />
| '''ICNS9''' || Glasgow (UK) || 10/15 July, 2011 || ?? || [http://www.icns9.org/]<br />
|-<br />
| '''WOCSEMMAD''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''WOCSDICE''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''ESREF''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''HETECH''' || ?? || ?? || ?? || ??<br />
|-<br />
| '''Lester Eastman Conference''' || ?? || 2012 || ?? || ??<br />
|-<br />
| '''IWN''' || ?? || 2012 || ?? || ??<br />
|}<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7560Michele ESPOSTO2010-09-08T03:44:47Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
'''2010'''<br />
<br />
12) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", accepted for poster presentation at the 19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
13) '''M. Esposto''', P. S. Park, D. N. Nath, S. Kryshnamoorty, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", accepted for oral presentation at the19th European Workshop on Heterostructure Technology - HETECH 2010, Crete, Oct. 2010.<br />
<br />
14) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2010, Gaeta, Oct. 2010.<br />
<br />
15) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", accepted for oral presentation at the 40th European Solid-State Device Research Conference - ESSDERC 2010, Sevilla, Sep. 2010 - IEEE proceeding. <br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
'''2010'''<br />
<br />
3) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", accepted for publication on IEEE Transactions on Device and Material Reliability.<br />
<br />
4) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", accepted for publication on Elsevier, Microelectronics Reliability, Vol. 50, Special Issue: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010).<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7496Michele ESPOSTO2010-07-16T14:54:49Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|1000px|center]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7495Michele ESPOSTO2010-07-16T14:53:33Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg|500px|left]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7494Michele ESPOSTO2010-07-16T14:52:56Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Pwrswitching.jpg]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=File:Pwrswitching.jpg&diff=7493File:Pwrswitching.jpg2010-07-16T14:51:53Z<p>32490: </p>
<hr />
<div></div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7492Michele ESPOSTO2010-07-16T14:51:14Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
'''GaN-based HEMTs for Power Switching Applications'''<br />
<br />
[[File:Esempio.jpg]]<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7491Michele ESPOSTO2010-07-16T14:49:41Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|180px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=File:My-picture.jpg&diff=7490File:My-picture.jpg2010-07-16T14:49:03Z<p>32490: </p>
<hr />
<div></div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7489Michele ESPOSTO2010-07-16T14:48:03Z<p>32490: </p>
<hr />
<div>[[File:my-picture.jpg|150px|left]]Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7481Michele ESPOSTO2010-07-07T23:40:50Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7282Michele ESPOSTO2010-04-01T14:47:29Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2002 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University (OSU), Columbus - OHIO (U.S.A.), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7281Michele ESPOSTO2010-04-01T14:46:13Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2002 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University (OSU), Columbus - OHIO (U.S.A.), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191 begin_of_the_skype_highlighting (00 39) 059.205.6191 end_of_the_skype_highlighting<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
email: espostom@ece.osu.edu, esposto.1@osu.edu<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7280Michele ESPOSTO2010-04-01T14:45:00Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2002 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University (OSU), Columbus - OHIO (U.S.A.), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
University of Modena and Reggio Emilia<br />
<br />
Strada Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: (00 39) 059.205.6191<br />
<br />
mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479<br />
<br />
fax: (00 39) 059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
Voice: (00 1) 614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7279Michele ESPOSTO2010-04-01T14:42:05Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.<br />
<br />
He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2002 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.<br />
<br />
In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University (OSU), Columbus - OHIO (U.S.A.), as Visiting Scholar.<br />
<br />
His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191 begin_of_the_skype_highlighting +39.059.205.6191 end_of_the_skype_highlighting begin_of_the_skype_highlighting +39.059.205.6191 end_of_the_skype_highlighting<br />
<br />
mobile phone: +39.349.28.43.806 +1.614.961.7479<br />
<br />
fax: +39.059.205.6329<br />
<br />
----<br />
<br />
Department of Electrical and Computer Engineering<br />
<br />
The Ohio State University<br />
<br />
357/364 Caldwell Laboratory<br />
<br />
2024 Neil Ave, Columbus, OH 43210 (USA)<br />
<br />
Voice: +1.614.688.8458</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=7053Michele ESPOSTO2009-12-21T12:02:06Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - supervisor Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6969Michele ESPOSTO2009-11-04T09:01:07Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - supervisor Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", accepted for lecture presentation at the 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6823Michele ESPOSTO2009-09-29T09:14:09Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for lecture presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", accepted for lecture presentation at the 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6821Michele ESPOSTO2009-09-28T21:32:01Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for lecture presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for lecture presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", accepted for lecture presentation at the 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6811Michele ESPOSTO2009-09-21T08:24:52Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for lecture presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for lecture presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for lecture presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", accepted for lecture presentation at the 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for future publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6810Michele ESPOSTO2009-09-21T08:18:23Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
11) A. Chini, F. Fantini, V. Di Lecce, '''M. Esposto''', A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", accepted for presentation at the 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for future publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6809Michele ESPOSTO2009-09-19T17:19:38Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for future publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6808Michele ESPOSTO2009-09-19T17:18:08Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
'''2008'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
'''2009'''<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
'''2009'''<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for future publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6807Michele ESPOSTO2009-09-17T19:06:55Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
His activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where he spents a non-continuous period of about 10 months. In that clean-room he has acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. He has fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz/10GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
<br />
His work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for future publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
mobile phone: +39.349.28.43.806<br />
<br />
fax: +39.059.205.6329</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6806Michele ESPOSTO2009-09-17T18:53:12Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.<br />
<br />
7) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for future publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
fax: +39.059.205.6129</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6790Michele ESPOSTO2009-09-03T12:58:10Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the International Conference on Nitride Semiconductor, Jeju, October 2009.<br />
<br />
7) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, '''M. Esposto''', A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", International Symposium on Compound Semiconductor 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proc..<br />
<br />
8) '''M. Esposto''', V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.<br />
<br />
9) D. Saguatti, V. Di Lecce, '''M. Esposto''', A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.<br />
<br />
10) V. Di Lecce, '''M. Esposto''', M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", accepted for presentation at the European Workshop on Heterostructure Technology 2009, Gunzburg/Ulm, November 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
2) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, accepted for publication.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
fax: +39.059.205.6129</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6779Michele ESPOSTO2009-07-30T06:24:34Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor, Jeju (Korea), October 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191<br />
<br />
fax: +39.059.205.6129</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6761Michele ESPOSTO2009-07-14T10:29:32Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, '''M. Esposto''', and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", accepted for presentation at the 8th International Conference on Nitride Semiconductor, Jeju (Korea), October 2009.<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6521Michele ESPOSTO2009-06-23T13:32:01Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6519Michele ESPOSTO2009-06-23T13:30:56Z<p>32490: </p>
<hr />
<div>[[File:Esempio.jpg]]<br />
<br />
Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6506Michele ESPOSTO2009-06-22T09:28:06Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", accepted for presentation at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", accepted for presentation at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6488Michele ESPOSTO2009-06-11T07:43:00Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", to be presented at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", to be presented at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6487Michele ESPOSTO2009-06-11T07:41:25Z<p>32490: </p>
<hr />
<div>Ph.D. candidate<br />
<br />
Course: Electronics and Telecommunications<br />
<br />
----<br />
Brief CV:<br />
<br />
Michele Esposto was born in Monte Sant'Angelo (FG), Italy, on June 28th, 1983. <br />
<br />
He received the Bachelor of Science in Electronic Engineering, from the University of Modena and Reggio Emilia in 2005, discussing a thesis entitled "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi. Still from the University of Modena and Reggio Emilia, in 2007 he received the Master of Science in Electronic Engineering, discussing a thesis entitled "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
From January 2008 he is a Ph.D. candidate of the Internation Doctorate School in ICT, University of Modena and Reggio Emilia. <br />
His research field is in Electronic Devices, project: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - Prof. Alessandro Chini.<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices is carried out at the DII Department of Modena, by means of DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", to be presented at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", to be presented at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Information Engineering Department<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6485Michele ESPOSTO2009-06-11T07:12:16Z<p>32490: moved Ing. Michele ESPOSTO to Michele ESPOSTO over redirect</p>
<hr />
<div>Ph.D. Student<br />
<br />
Electronics and Telecommunications<br />
<br />
----<br />
Brief CV (in italian):<br />
<br />
Michele Esposto, nato il 28 giugno 1983, è originario di Monte Sant'Angelo (FG).<br />
<br />
Dopo il diploma di Perito Commerciale ind. Programmatore presso l'ITC "G. Toniolo" di Manfredonia (FG), consegue, presso l'Università degli Studi di Modena e Reggio Emilia, la Laurea di Primo Livello in Ingegneria Elettronica nell'ottobre 2005 con tesi sperimentale "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi, e la Laurea Magistrale nel novembre 2007 con tesi sperimentale "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
Supera l'Esame di Stato per l'Abilitazione all'Esercizio della Professione di Ingegnere (sez.A) nella II sessione 2007 ed è vincitore di borsa di Dottorato di Ricerca XXIII ciclo nella International Doctorate School in ICT presso l'Università degli Studi di Modena e Reggio Emilia.<br />
<br />
Il suo settore di ricerca è quello dei Dispositivi Elettronici, progetto di ricerca: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" sotto la supervisione del Prof. Alessandro Chini.<br />
<br />
Attualmente, per collaborazione nel progetto di ricerca, si occupa del processing di dispositivi HEMT presso la clean-room del National Nanotechnology Laboratory del CNR, in Lecce, e si occupa di misure RF di potenza ed impulsate (Load-Pull e Current-DLTS).<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices has is carried out at the DII Department of Modena, using DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
New innovative processing methods are under investigation and testing.<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", to be presented at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", to be presented at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Dipartimento di Ingegneria dell'Informazione<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Ing._Michele_ESPOSTO&diff=6486Ing. Michele ESPOSTO2009-06-11T07:12:16Z<p>32490: moved Ing. Michele ESPOSTO to Michele ESPOSTO over redirect</p>
<hr />
<div>#REDIRECT [[Michele ESPOSTO]]</div>32490https://web.ing.unimo.it/wiki/index.php?title=User:32490&diff=6484User:324902009-06-11T07:11:51Z<p>32490: Redirected page to Michele ESPOSTO</p>
<hr />
<div>#REDIRECT [[Michele ESPOSTO]]</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6483Michele ESPOSTO2009-06-11T07:10:19Z<p>32490: </p>
<hr />
<div>Ph.D. Student<br />
<br />
Electronics and Telecommunications<br />
<br />
----<br />
Brief CV (in italian):<br />
<br />
Michele Esposto, nato il 28 giugno 1983, è originario di Monte Sant'Angelo (FG).<br />
<br />
Dopo il diploma di Perito Commerciale ind. Programmatore presso l'ITC "G. Toniolo" di Manfredonia (FG), consegue, presso l'Università degli Studi di Modena e Reggio Emilia, la Laurea di Primo Livello in Ingegneria Elettronica nell'ottobre 2005 con tesi sperimentale "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi, e la Laurea Magistrale nel novembre 2007 con tesi sperimentale "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
Supera l'Esame di Stato per l'Abilitazione all'Esercizio della Professione di Ingegnere (sez.A) nella II sessione 2007 ed è vincitore di borsa di Dottorato di Ricerca XXIII ciclo nella International Doctorate School in ICT presso l'Università degli Studi di Modena e Reggio Emilia.<br />
<br />
Il suo settore di ricerca è quello dei Dispositivi Elettronici, progetto di ricerca: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" sotto la supervisione del Prof. Alessandro Chini.<br />
<br />
Attualmente, per collaborazione nel progetto di ricerca, si occupa del processing di dispositivi HEMT presso la clean-room del National Nanotechnology Laboratory del CNR, in Lecce, e si occupa di misure RF di potenza ed impulsate (Load-Pull e Current-DLTS).<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices has is carried out at the DII Department of Modena, using DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
New innovative processing methods are under investigation and testing.<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", to be presented at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", to be presented at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
<br />
<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Dipartimento di Ingegneria dell'Informazione<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6482Michele ESPOSTO2009-06-11T07:09:41Z<p>32490: </p>
<hr />
<div>Ph.D. Student<br />
<br />
Electronics and Telecommunications<br />
<br />
----<br />
Brief CV (in italian):<br />
<br />
Michele Esposto, nato il 28 giugno 1983, è originario di Monte Sant'Angelo (FG).<br />
<br />
Dopo il diploma di Perito Commerciale ind. Programmatore presso l'ITC "G. Toniolo" di Manfredonia (FG), consegue, presso l'Università degli Studi di Modena e Reggio Emilia, la Laurea di Primo Livello in Ingegneria Elettronica nell'ottobre 2005 con tesi sperimentale "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi, e la Laurea Magistrale nel novembre 2007 con tesi sperimentale "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
Supera l'Esame di Stato per l'Abilitazione all'Esercizio della Professione di Ingegnere (sez.A) nella II sessione 2007 ed è vincitore di borsa di Dottorato di Ricerca XXIII ciclo nella International Doctorate School in ICT presso l'Università degli Studi di Modena e Reggio Emilia.<br />
<br />
Il suo settore di ricerca è quello dei Dispositivi Elettronici, progetto di ricerca: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" sotto la supervisione del Prof. Alessandro Chini.<br />
<br />
Attualmente, per collaborazione nel progetto di ricerca, si occupa del processing di dispositivi HEMT presso la clean-room del National Nanotechnology Laboratory del CNR, in Lecce, e si occupa di misure RF di potenza ed impulsate (Load-Pull e Current-DLTS).<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity is focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication is carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 6 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices has is carried out at the DII Department of Modena, using DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
New innovative processing methods are under investigation and testing.<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshops and Conference Presentations:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008 - IEEE proc.. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. Di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
4) '''M. Esposto''', V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", to be presented at the 39th European Solid-State Device Research Conference, Athens, September 2009 - IEEE proc..<br />
<br />
5) A. Chini, V. Di Lecce, '''M. Esposto''', G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", to be presented at the European Microwave Week 2009, Rome, October 2009 - IEEE proc..<br />
Journal Papers:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
<br />
----<br />
<br />
DII - Dipartimento di Ingegneria dell'Informazione<br />
<br />
Via Vignolese 905 - 41125 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6360Michele ESPOSTO2009-04-21T10:14:42Z<p>32490: </p>
<hr />
<div>Ph.D. Student<br />
<br />
Electronics and Telecommunications<br />
<br />
----<br />
Brief CV (in italian):<br />
<br />
Michele Esposto, nato il 28 giugno 1983, è originario di Monte Sant'Angelo (FG).<br />
<br />
Dopo il diploma di Perito Commerciale ind. Programmatore presso l'ITC "G. Toniolo" di Manfredonia (FG), consegue, presso l'Università degli Studi di Modena e Reggio Emilia, la Laurea di Primo Livello in Ingegneria Elettronica nell'ottobre 2005 con tesi sperimentale "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi, e la Laurea Magistrale nel novembre 2007 con tesi sperimentale "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
<br />
Supera l'Esame di Stato per l'Abilitazione all'Esercizio della Professione di Ingegnere (sez.A) nella II sessione 2007 ed è vincitore di borsa di Dottorato di Ricerca XXIII ciclo nella International Doctorate School in ICT presso l'Università degli Studi di Modena e Reggio Emilia.<br />
<br />
Il suo settore di ricerca è quello dei Dispositivi Elettronici, progetto di ricerca: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" sotto la supervisione del Prof. Alessandro Chini.<br />
<br />
Attualmente, per collaborazione nel progetto di ricerca, si occupa del processing di dispositivi HEMT presso la clean-room del National Nanotechnology Laboratory del CNR, in Lecce, e si occupa di misure RF di potenza ed impulsate (Load-Pull e Current-DLTS).<br />
<br />
----<br />
<br />
Research activity: <br />
<br />
My activity has been focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication has been carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 4 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices has been carried out at the DII Department of Modena, using DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
New innovative processing methods are under investigation and testing.<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
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List of publications:<br />
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International Workshops and Conference Presentations:<br />
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1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008. <br />
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2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
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3) A. Chini, V. di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
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Journal Papers:<br />
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1) A. Chini, '''M. Esposto''', G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol.45, Issue 8, April 9, 2009, pp. 426-427.<br />
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DII - Dipartimento di Ingegneria dell'Informazione<br />
<br />
Via Vignolese 905 - 41100 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490https://web.ing.unimo.it/wiki/index.php?title=Michele_ESPOSTO&diff=6236Michele ESPOSTO2009-01-29T10:01:17Z<p>32490: </p>
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<div>Ph.D. Student<br />
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Electronics and Telecommunications<br />
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Brief CV (in italian):<br />
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Michele Esposto, nato il 28 giugno 1983, è originario di Monte Sant'Angelo (FG).<br />
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Dopo il diploma di Perito Commerciale ind. Programmatore presso l'ITC "G. Toniolo" di Manfredonia (FG), consegue, presso l'Università degli Studi di Modena e Reggio Emilia, la Laurea di Primo Livello in Ingegneria Elettronica nell'ottobre 2005 con tesi sperimentale "Progetto e sviluppo di un sistema di rivelazione diretta di raggi X privo di scintillatore" - Prof. Luigi Rovati, Prof. Giovanni Verzellesi, e la Laurea Magistrale nel novembre 2007 con tesi sperimentale "Realizzazione di un sistema Current-DLTS per dispositivi HEMT a semiconduttori composti" - Prof. Alessandro Chini.<br />
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Supera l'Esame di Stato per l'Abilitazione all'Esercizio della Professione di Ingegnere (sez.A) nella II sessione 2007 ed è vincitore di borsa di Dottorato di Ricerca XXIII ciclo nella International Doctorate School in ICT presso l'Università degli Studi di Modena e Reggio Emilia.<br />
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Il suo settore di ricerca è quello dei Dispositivi Elettronici, progetto di ricerca: "Characterization and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" sotto la supervisione del Prof. Alessandro Chini.<br />
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Attualmente, per collaborazione nel progetto di ricerca, si occupa del processing di dispositivi HEMT presso la clean-room del National Nanotechnology Laboratory del CNR, in Lecce, e si occupa di misure RF di potenza ed impulsate (Load-Pull e Current-DLTS).<br />
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Research activity: <br />
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My activity has been focused on the fabrication and RF-characterization of AlGaN/GaN High Electron Mobility Transistors for high power and high temperature microwave applications. The fabrication has been carried out at the facilities of the N.N.L. (National Nanotechnology Laboratory) – part of CNR-INFM in Lecce where I spent a non-continuous period of about 4 months. In that clean-room I’ve acquired skills in contact photo-litography, metal deposition, dry and wet etching processes. I’ve fabricated standard HEMT devices on sapphire substrate yielding a 3 W/mm output power density without significant dispersion phenomena. The RF-characterization of the fabricated devices has been carried out at the DII Department of Modena, using DC and pulsed IV measurement, Current-DLTS (Deep Level Transient Spectroscopy) for the current-collapse analysis, and a 2GHz Continuous Wave Load-Pull system for the evaluation of RF power performances.<br />
For the next future I will work on the processing optimization and standardization.<br />
New innovative processing methods are under investigation and testing.<br />
My work is supported by the MiUR under the FIRB 2007-2010: "''Enabling technologies, characterisation and modelling for wideband reconfigurable integrated electronic components for high frequency applications''". Coord. Scientifico: prof. ''LIMITI Ernesto'', Resp. Scientifico: prof. ''CHINI Alessandro''.<br />
<br />
----<br />
<br />
List of publications:<br />
<br />
International Workshop:<br />
<br />
1) A. Chini, '''M. Esposto''', G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", European Microwave Week 2008, Amsterdam, October 2008. <br />
<br />
2) A. Chini, '''M. Esposto''', M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
3) A. Chini, V. di Lecce, '''M. Esposto''', G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop 2008, Venice, November 2008.<br />
<br />
----<br />
<br />
DII - Dipartimento di Ingegneria dell'Informazione<br />
<br />
Via Vignolese 905 - 41100 Modena<br />
<br />
email: michele.esposto@unimore.it<br />
<br />
voice: +39.059.205.6191</div>32490