Difference between revisions of "Valerio Di Lecce"

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International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br>
 
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br>
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br>
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Course: Electronics and Telecommmunications<br><br>
  
 
Department of Information Engineering <br>
 
Department of Information Engineering <br>
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In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br>
 
In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br>
  
== Publications (up to 31 Dec. 2011)==
+
== Publications (up to 19 Feb. 2012)==
  
 
● '''JOURNALS:'''
 
● '''JOURNALS:'''
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'''''— Submitted'''''
 
'''''— Submitted'''''
  
'''[J6] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''submitted on '''IET Electronics Letters'''''.
+
'''[J6]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices'''''  
  
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices'''''  
+
'''[J5]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.
  
'''[J4]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.
+
'''''– 2012 –'''''
 +
 
 +
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''accepted for publication on '''IET Electronics Letters'''''.
  
 
'''''– 2011 –'''''
 
'''''– 2011 –'''''
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<br><br>
 
<br><br>
 
● '''CONFERENCES AND WORKSHOPS:'''
 
● '''CONFERENCES AND WORKSHOPS:'''
 +
 +
'''''– 2012 –'''''
 +
 +
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.
  
 
'''''– 2010 –'''''
 
'''''– 2010 –'''''

Revision as of 10:53, 19 February 2012

Ing. Valerio Di Lecce, Ph.D. Student

International Doctorate School in Information and Communication Technologies
Course: Electronics and Telecommmunications

Department of Information Engineering
University of Modena and Reggio Emilia
Strada Vignolese 905, I–41125 Modena MO, ITALY

Phone: +39 059 2056191
e-mail: valerio.dilecce@unimore.it

Valerio Di Lecce was born in Modena, Italy, in 1982.

He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.

Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for power and innovative applications" under the supervision of Prof. Alessandro Chini. His interests include measuring, characterization, numerical simulation, and design of III-N HEMTs.

In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.

Publications (up to 19 Feb. 2012)

JOURNALS:

— Submitted

[J6] A. Chini, V. Di Lecce, F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", submitted on IEEE Transactions on Electronic Devices

[J5] M. Esposto, V. Di Lecce, M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", submitted on Microelectronics Reliability.

– 2012 –

[J4] V. Di Lecce, S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", accepted for publication on IET Electronics Letters.

– 2011 –

[J3] V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", Journal of Electronic Materials, Vol. 40, no. 4, Apr. 2011, pp. 362-368.

– 2010 –

[J2] V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", Microelectronics Reliability, Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.

– 2009 –

[J1] A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.

CONFERENCES AND WORKSHOPS:

– 2012 –

[C14] A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", 2012 IEEE International Reliability Physics Symposium—IRPS 2012, Anaheim CA (USA), Apr. 2012.

– 2010 –

[C13] V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", 19th European Heterostructure Technology Workshop—HETECH 2010, Fodele (Crete), Oct. 2010.

[C12] M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, V. Di Lecce, A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", 19th European Heterostructure Technology Workshop—HETECH 2010, Fodele (Crete), Oct. 2010.

[C11] V. Di Lecce, M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—ESREF 2010, Gaeta (Italy), Oct. 2010.

[C10] V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", 40th European Solid-State Device Research Conference—ESSDERC 2010, Sevilla (Spain), Sep. 2010.

– 2009 –

[C9] A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Devices Meeting—IEDM 2009, Baltimore MD (USA), Dec. 2009.

[C8] D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, 18th European Heterostructure Technology Workshop—HETECH 2009, Günzburg/Ulm (Germany), Nov. 2009.

[C7] M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", 18th European Heterostructure Technology Workshop—HETECH 2009, Günzburg/Ulm (Germany), Nov. 2009.

[C6] V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Heterostructure Technology Workshop—HETECH 2009, Günzburg/Ulm (Germany), Nov. 2009.

[C5] G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductors—ICNS-8 2009, Jeju (South Korea), Oct. 2009.

[C4] A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", European Microwave Week—EuMW 2009, Rome (Italy), Sep. 2009.

[C3] M. Esposto, V. Di Lecce, A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference—ESSDERC 2009, Athens (Greece), Sep. 2009.

[C2] E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", 36th International Symposium on Compound Semiconductors—ISCS 2009, Santa Barbara CA (USA), Sep. 2009.

– 2008 –

[C1] A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", 17th European Heterostructure Technology Workshop—HETECH 2008, Venice (Italy), Nov. 2008.