Difference between revisions of "Valerio Di Lecce"

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'''Journals:'''
 
'''Journals:'''
  
A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023
+
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023
  
  
 
'''Conferences and Workshops:'''
 
'''Conferences and Workshops:'''
  
A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008
+
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009
  
• E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009
+
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009
  
M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009
+
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009
  
• A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009
+
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009
  
G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009
+
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009
  
'''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009
+
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009
  
M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009
+
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009
  
• D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009
+
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009
  
A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009
+
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008

Revision as of 14:36, 29 April 2010

Ing. Valerio Di Lecce
Ph.D. Student, 24th Cycle

Department of Information Engineering
University of Modena and Reggio Emilia
Strada Vignolese 905, I–41125 Modena MO, ITALY

Phone: +39 059 2056191
e-mail: valerio.dilecce@unimore.it

Publications


Journals:

[J1] A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30 no. 10, Oct. 2009, pp. 1021–1023


Conferences and Workshops:

[C9] A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Devices Meeting—IEDM 2009, Baltimore MD (USA), Dec. 2009

[C8] D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany), Nov. 2009

[C7] M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany), Nov. 2009

[C6] V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Heterostructure Technology Workshop—HeTech 2009, Günzburg/Ulm (Germany), Nov. 2009

[C5] G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductors—ICNS-8 2009, Jeju (South Korea), Oct. 2009

[C4] A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", European Microwave Week—EuMW 2009, Rome (Italy), Sep. 2009

[C3] M. Esposto, V. Di Lecce, A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference—ESSDERC 2009, Athens (Greece), Sep. 2009

[C2] E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", 36th International Symposium on Compound Semiconductors—ISCS 2009, Santa Barbara CA (USA), Sep. 2009

[C1] A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", 17th European Heterostructure Technology Workshop—HeTech 2008, Venice (Italy), Nov. 2008