Difference between revisions of "Michele ESPOSTO"

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Ph.D. candidate
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[[File:my-picture.jpg|150px|left]]Ph.D. candidate
  
 
Course: Electronics and Telecommunications
 
Course: Electronics and Telecommunications

Revision as of 15:48, 16 July 2010

My-picture.jpg

Ph.D. candidate

Course: Electronics and Telecommunications


Brief CV:

Michele Esposto was born in Monte Sant’Angelo (FG), Italy, on June 28th, 1983.

He received a B.S. and M.S. in electrical engineering, both from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2007 respectively. Since 2008 he has been pursuing a Ph.D. degree in electronics and telecommunications engineering in the ICT Doctorate School of the University of Modena and Reggio Emilia, Modena, Italy - Topic: "Fabrication, Characterization, and Reliability of GaN HEMTs (High Electron Mobilty Transistors) for High Power and High Temperature Applications" - advisor Prof. Alessandro Chini.

In 2010 he joined Prof. Rajan's Group, in the ECE Department of the Ohio State University, Columbus - OHIO (USA), as Visiting Scholar.

His main research field is the fabrication and characterization of AlGaN/GaN HEMTs for high power and high temperature applications. Part of his work has been carried out in cooperation with the National Nanotechnology Laboratory (NNL), University of Salento, Lecce, Italy.


List of publications:

International Workshops and Conference Presentations:

2008

1) A. Chini, M. Esposto, G. Verzellesi, S. Lavanga, C. Lanzieri, A. Cetronio, "Characterization and Numerical Simulations of High Power Field-Plated pHEMTs", 3rd European Microwave Integrated Circuit EuMIC - EuMW 2008, Amsterdam, October 2008 - IEEE proceeding.

2) A. Chini, M. Esposto, M. Bonaiuti, G. Verzellesi, F. Zanon, E. Zanoni, G. Meneghesso, "Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement", 17th European Heterostructure Technology Workshop - HETECH 2008, Venice, November 2008.

3) A. Chini, V. Di Lecce, M. Esposto, G. Verzellesi, S. Lavanga, A. Cetronio, C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", European Heterostructure Technology Workshop - 17th HETECH 2008, Venice, November 2008.

2009

4) M. Esposto, V. Di Lecce, S. De Guido, A. Passaseo, M. De Vittorio, A. Chini, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", 39th European Solid-State Device Research Conference - ESSDERC 2009, Athens, September 2009 - IEEE proceeding.

5) E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, V. Di Lecce, M. Esposto, A. Chini, G. Meneghesso, "Reverse Gate Bias Stress Induced Degradation of GaN HEMT", 36th International Symposium on Compound Semiconductor - ISCS 2009, Santa Barbara, September 2009 - Physica Status Solidi (c) proceeding.

6) G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, V. Di Lecce, M. Esposto, and A. Chini, "GaN Hemt Degradation induced by Reverse Gate Bias Stress", 8th International Conference on Nitride Semiconductor - ICNS 2009, Jeju, October 2009.

7) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", 4th European Microwave Integrated Circuits EuMIC - EuMW 2009, Rome, October 2009 - IEEE proceeding.

8) M. Esposto, V. Di Lecce, M. Bonaiuti, F. Fantini, A. Chini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMT", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

9) D. Saguatti, V. Di Lecce, M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, M. Missous, "Design of field-plated InP-based HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

10) V. Di Lecce, M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", 18th European Workshop on Heterostructure Technology - HETECH 2009, Gunzburg/Ulm, November 2009.

11) A. Chini, F. Fantini, V. Di Lecce, M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, E. Zanoni, "Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs", 2009 International Electron Device Meeting - IEDM 2009, Baltimore, December 2009 - IEEE proceeding.


Journal Papers:

2009

1) A. Chini, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements", IEEE Electronics Letter, Vol. 45, Issue 8, April 9, 2009, pp. 426-427.

2) A. Chini, V. Di Lecce, M. Esposto, G. Meneghesso, E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", IEEE Electron Device Letters, Vol. 30, Issue 10, Oct. 2009, pp. 1021 - 1023.


DII - Information Engineering Department

University of Modena and Reggio Emilia

Strada Vignolese 905 - 41125 Modena

email: michele.esposto@unimore.it

voice: (00 39) 059.205.6191

mobile phones: (00 39) 349.28.43.806 - (00 1) 614.961.7479

fax: (00 39) 059.205.6329


Department of Electrical and Computer Engineering

The Ohio State University

357/364 Caldwell Laboratory

2024 Neil Ave, Columbus, OH 43210 (USA)

email: espostom@ece.osu.edu, esposto.1@osu.edu

Voice: (00 1) 614.688.8458