MeMiTec/Low Frequency Noise Modeling

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MeMiTec-Low Frequency Noise Modeling.jpg

Bias-dependent low frequency noise models of bipolar transistors are identified from experimental data obtained using an home-made experimental set-up. The models are expressed in terms of analytical expressions without invoking therefore look-up tables. These models have been implemented in the ADS simulator exploiting the flexibility offered by the Symbolically-Defined Device (SDD) available in the ADS computer aided design software.

The low frequency noise model identification and implementation has been applied to GaInP/GaAs Heterojunction Bipolar Transistors (HBT's).

The figure shows that the analytical bias-dependent low frequency noise models implemented in the ADS simulator (red curves) are in very well agreement with the experiemental data (black curves). The characterization as well as the modeling are based on a short-circuit noise currents description of a noisy four-poles.