https://web.ing.unimo.it/wiki/api.php?action=feedcontributions&user=22051&feedformat=atomWeb - User contributions [en]2024-03-29T07:47:20ZUser contributionsMediaWiki 1.34.2https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=11482Valerio Di Lecce2016-11-07T17:20:59Z<p>22051: </p>
<hr />
<div>[[File:VDL_IEEE_2014_1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
From 2012 to 2016, he was with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 07 Nov. 2016)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2016 –'''''<br />
<br />
'''[J14]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7562348 Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection]", '''''IEEE Electron Device Letters''''', Vol. 37, no. 11, Nov. 2016, pp. 1489-1492.<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[J13]''' S. Vaziri, A.D. Smith, M. Östling, G. Lupina, J. Dabrowski, G. Lippert, W. Mehr, F. Driussi, S. Venica, '''V. Di Lecce''', A. Gnudi, M. König, G. Ruhl, M. Belete, M.C. Lemme, "[http://www.sciencedirect.com/science/article/pii/S0038109815002951 Going ballistic: Graphene hot electron transistors]", '''''Solid State Communications''''', Vol. 224, Dec. 2015, pp. 64-75.<br />
<br />
'''[J12]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110115002221 Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics]", '''''Solid State Electronics''''', Vol. 114, Dec. 2015, pp. 23-29.<br />
<br />
'''[J11]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7147793 Simulations of Graphene Base Transistors With Improved Graphene Interface Model]", '''''IEEE Electron Device Letters''''', Vol. 36, no. 9, Sep. 2015, pp. 969-971.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J10]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J8]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J6]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J5]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J4]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J3] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J2] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[C17]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7175570 Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges]", ''73rd Device Research Conference—'''DRC 2015''''', Columbus OH, (USA), June 2015.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[C16]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948823 Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation]", ''44th European Solid-State Device Research Conference—'''ESSDERC 2014''''', Venice Lido (Italy), Sep. 2014.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=11481Valerio Di Lecce2016-11-07T08:23:01Z<p>22051: </p>
<hr />
<div>[[File:VDL_IEEE_2014_1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
From 2012 to 2016, he was with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 07 Nov. 2016)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2016 –'''''<br />
<br />
'''[J15]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7562348 Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection]", '''''IEEE Electron Device Letters''''', Vol. 37, no. 11, Nov. 2016, pp. 1489-1492.<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[J14]''' S. Vaziri, A.D. Smith, M. Östling, G. Lupina, J. Dabrowski, G. Lippert, W. Mehr, F. Driussi, S. Venica, '''V. Di Lecce''', A. Gnudi, M. König, G. Ruhl, M. Belete, M.C. Lemme, "[http://www.sciencedirect.com/science/article/pii/S0038109815002951 Going ballistic: Graphene hot electron transistors]", '''''Solid State Communications''''', Vol. 224, Dec. 2015, pp. 64-75.<br />
<br />
'''[J13]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110115002221 Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics]", '''''Solid State Electronics''''', Vol. 114, Dec. 2015, pp. 23-29.<br />
<br />
'''[J12]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7147793 Simulations of Graphene Base Transistors With Improved Graphene Interface Model]", '''''IEEE Electron Device Letters''''', Vol. 36, no. 9, Sep. 2015, pp. 969-971.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J11]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[C17]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7175570 Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges]", ''73rd Device Research Conference—'''DRC 2015''''', Columbus OH, (USA), June 2015.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[C16]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948823 Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation]", ''44th European Solid-State Device Research Conference—'''ESSDERC 2014''''', Venice Lido (Italy), Sep. 2014.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=11096Valerio Di Lecce2015-11-20T09:09:07Z<p>22051: </p>
<hr />
<div>[[File:VDL_IEEE_2014_1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 20 Nov. 2015)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[J14]''' S. Vaziri, A.D. Smith, M. Östling, G. Lupina, J. Dabrowski, G. Lippert, W. Mehr, F. Driussi, S. Venica, '''V. Di Lecce''', A. Gnudi, M. König, G. Ruhl, M. Belete, M.C. Lemme, "[http://www.sciencedirect.com/science/article/pii/S0038109815002951 Going ballistic: Graphene hot electron transistors]", '''''Solid State Communications''''', Vol. 224, Dec. 2015, pp. 64-75.<br />
<br />
'''[J13]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110115002221 Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics]", '''''Solid State Electronics''''', Vol. 114, Dec. 2015, pp. 23-29.<br />
<br />
'''[J12]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7147793 Simulations of Graphene Base Transistors With Improved Graphene Interface Model]", '''''IEEE Electron Device Letters''''', Vol. 36, no. 9, Sep. 2015, pp. 969-971.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J11]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[C17]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7175570 Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges]", ''73rd Device Research Conference—'''DRC 2015''''', Columbus OH, (USA), June 2015.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[C16]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948823 Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation]", ''44th European Solid-State Device Research Conference—'''ESSDERC 2014''''', Venice Lido (Italy), Sep. 2014.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=10925Valerio Di Lecce2015-08-27T13:43:38Z<p>22051: </p>
<hr />
<div>[[File:VDL_IEEE_2014_1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 27 Aug 2015)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[J13]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110115002221 Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics]", '''''Solid State Electronics''''', Vol. 114, Dec. 2015, pp. 23-29.<br />
<br />
'''[J12]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7147793 Simulations of Graphene Base Transistors With Improved Graphene Interface Model]", '''''IEEE Electron Device Letters''''', Vol. 36, no. 9, Sep. 2015, pp. 969-971.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J11]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2015 –'''''<br />
<br />
'''[C17]''' '''V. Di Lecce''', A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7175570 Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges]", ''73rd Device Research Conference—'''DRC 2015''''', Columbus OH, (USA), June 2015.<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[C16]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948823 Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation]", ''44th European Solid-State Device Research Conference—'''ESSDERC 2014''''', Venice Lido (Italy), Sep. 2014.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=10433Valerio Di Lecce2014-11-10T16:01:23Z<p>22051: </p>
<hr />
<div>[[File:VDL_IEEE_2014_1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 10 Nov 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J11]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[C16]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948823 Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation]", ''44th European Solid-State Device Research Conference—'''ESSDERC 2014''''', Venice Lido (Italy), Sep. 2014.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=File:VDL_IEEE_2014_1.jpg&diff=10432File:VDL IEEE 2014 1.jpg2014-11-10T15:59:44Z<p>22051: </p>
<hr />
<div></div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=10431Valerio Di Lecce2014-11-10T15:59:10Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 17 Sep 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J11]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[C16]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948823 Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation]", ''44th European Solid-State Device Research Conference—'''ESSDERC 2014''''', Venice Lido (Italy), Sep. 2014.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=10243Valerio Di Lecce2014-09-17T14:18:05Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 17 Sep 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J11]''' C. Pugnaghi, R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://scitation.aip.org/content/aip/journal/jap/116/11/10.1063/1.4895993 Semianalytical quantum model for graphene field-effect transistors]", '''''Journal of Applied Physics''''', Vol. 116, no. 11, Sep. 2014, p. 114505.<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=10169Valerio Di Lecce2014-07-30T13:34:10Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 30 Jul 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J10]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://www.sciencedirect.com/science/article/pii/S0038110114001804 Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback]", '''''Solid-State Electronics''''', Vol. 100, Oct. 2014, pp. 54-60.<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=10144Valerio Di Lecce2014-06-25T14:39:00Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 22 Jan 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6818881 DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation]", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9566Valerio Di Lecce2014-01-24T15:59:13Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 22 Jan 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9565Valerio Di Lecce2014-01-24T15:58:20Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 22 Jan 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9562Valerio Di Lecce2014-01-22T15:24:10Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 22 Jan 2014)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2014 –'''''<br />
<br />
'''[J9]''' R. Grassi, A. Gnudi, '''V. Di Lecce''', E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6689297 Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains]", '''''IEEE Transactions on Electron Devices''''', Vol. 61, no. 2, Feb. 2014, pp. 617-624.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9495Valerio Di Lecce2013-11-22T10:03:29Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 22 Nov 2013)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9494Valerio Di Lecce2013-11-21T15:05:50Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 21 Nov 2013)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6241881 Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs]", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5618358 Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations]", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5424394 Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs]", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5296403 RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements]", ''European Microwave Week—'''EuMIC 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5331525 Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics]", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9493Valerio Di Lecce2013-11-21T09:49:31Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In February 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br><br />
Since October 2012, he is a Post-Doctoral Researcher with E. De Castro Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy.<br><br />
<br><br />
His interests include measurements, characterization, modeling and numerical simulation of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 21 Nov 2013)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J8]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6645424 Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 12, Dec. 2013, pp. 4263-4268.<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=9382Valerio Di Lecce2013-09-27T08:25:02Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 27 Sep 2013)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J7]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "[http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6579655 Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 60, no. 10, Oct. 2013, pp. 3584-3591.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, Jan. 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br />
<br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[C15]''' '''V. Di Lecce''', R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation", ''43th European Solid-State Device Research Conference—'''ESSDERC 2013''''', Bucharest (Romania), Sep. 2013.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8964Valerio Di Lecce2013-01-25T17:05:38Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 25 Jan 2013)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
None.<br />
<br />
'''''– 2013 –'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, January 2013, pp. 15-20.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8963Valerio Di Lecce2013-01-25T17:02:25Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 25 Jan 2013)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
None.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', Vol. 42, no. 1, January 2013, pp. 15-20<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8865Valerio Di Lecce2012-11-13T14:12:03Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 13 Nov 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
None.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', DOI: 10.1007/s11664-012-2268-2<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8864Valerio Di Lecce2012-11-13T14:10:07Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 01 Nov 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
None.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "[http://link.springer.com/article/10.1007%2Fs11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs]", '''''Journal of Electronic Materials''''', DOI: 10.1007/s11664-012-2268-2<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6178780 Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation]", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06171040 Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes]", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "[http://link.springer.com/article/10.1007/s11664-010-1434-7 An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters]", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "[http://www.sciencedirect.com/science/article/pii/S0026271410003999 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress]", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "[http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5238643 Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation]", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8859Valerio Di Lecce2012-11-09T18:04:48Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 01 Nov 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
None.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs", '''''Journal of Electronic Materials''''', DOI: 10.1007/s11664-012-2268-2<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8782Valerio Di Lecce2012-09-18T15:41:06Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 18 Sep 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J7] V. Di Lecce''' and A. Chini, "Analysis of drive-dependent degradation mechanisms of GaN HEMTs with a pseudo-RF measurement setup", ''submitted on '''IET Electronics Letters'''''.<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8645Valerio Di Lecce2012-05-27T10:41:13Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it], [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 27 May 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", '''''IEEE Transactions on Electron Devices''''', Vol. 59, no. 5, May 2012, pp. 1385-1392.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", '''''IET Electronics Letters''''', Vol. 48, no. 6, Mar. 2012, pp. 347-348.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8525Valerio Di Lecce2012-03-09T13:47:41Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it], [mailto:valerio.dilecce82@gmail.com valerio.dilecce82@gmail.com]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In february 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "[http://www.ict.unimore.it/ict_docs/phd_topics/2009/topic2009_dilecce.pdf Characterization and numerical simulations of GaN HEMTs for power and innovative applications]" under the supervision of Prof. Alessandro Chini. During his time as a Ph.D. student he spent one year as visiting scholar at The Ohio State University, Columbus OH, USA, where he gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measurements, characterization, numerical simulation and reliability study of electronic devices.<br><br />
<br><br />
<br />
== Publications (up to 1 March 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''accepted for publication on '''IEEE Transactions on Electronic Devices'''''.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''accepted for publication on '''IET Electronics Letters'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8493Valerio Di Lecce2012-02-28T09:10:35Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D.<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: Electronics and Telecommmunications<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In the year 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for power and innovative applications" under the supervision of Prof. Alessandro Chini.<br><br />
In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measuring, characterization, numerical simulation and reliability study of III-N HEMTs.<br><br />
<br><br />
<br />
<br />
== Publications (up to 28 Feb. 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''accepted for publication on '''IEEE Transactions on Electronic Devices'''''.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''accepted for publication on '''IET Electronics Letters'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8492Valerio Di Lecce2012-02-28T09:10:20Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: Electronics and Telecommmunications<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
In the year 2012 he received the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for power and innovative applications" under the supervision of Prof. Alessandro Chini.<br><br />
In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br> <br />
His interests include measuring, characterization, numerical simulation and reliability study of III-N HEMTs.<br><br />
<br><br />
<br />
<br />
== Publications (up to 28 Feb. 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''accepted for publication on '''IEEE Transactions on Electronic Devices'''''.<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''accepted for publication on '''IET Electronics Letters'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8432Valerio Di Lecce2012-02-19T09:53:25Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: Electronics and Telecommmunications<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for power and innovative applications" under the supervision of Prof. Alessandro Chini. His interests include measuring, characterization, numerical simulation, and design of III-N HEMTs.<br><br />
<br><br />
In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br />
== Publications (up to 19 Feb. 2012)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices''''' <br />
<br />
'''[J5]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[J4] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''accepted for publication on '''IET Electronics Letters'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2012 –'''''<br />
<br />
'''[C14]''' A. Chini, '''V. Di Lecce''', F. Soci, D. Bisi, A. Stocco, M. Meneghini, A. Gasparotto, G. Meneghesso and E. Zanoni, "Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs", ''2012 IEEE International Reliability Physics Symposium—'''IRPS 2012''''', Anaheim CA (USA), Apr. 2012.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8405Valerio Di Lecce2012-01-30T09:21:02Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982.<br><br />
<br><br />
He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively.<br><br />
<br><br />
Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for power and innovative applications" under the supervision of Prof. Alessandro Chini. His interests include measuring, characterization, numerical simulation, and design of III-N HEMTs.<br><br />
<br><br />
In the year 2011 he was visiting scholar at The Ohio State University, Columbus OH, USA, where he has gained experience in the device fabrication process and acquired processing skills in a fully-staffed cleanroom under the supervision of Prof. Siddharth Rajan.<br><br />
<br />
== Publications (up to 31 Dec. 2011)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''submitted on '''IET Electronics Letters'''''.<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices''''' <br />
<br />
'''[J4]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8379Valerio Di Lecce2011-12-26T10:10:31Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to 31 Dec. 2011)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J6] V. Di Lecce''', S. Krishnamoorthy, M. Esposto, T.-H. Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", ''submitted on '''IET Electronics Letters'''''.<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices''''' <br />
<br />
'''[J4]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8137Valerio Di Lecce2011-08-31T21:23:03Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to 1 Sep. 2011)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices''''' <br />
<br />
'''[J4]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''submitted on '''Microelectronics Reliability'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=8092Valerio Di Lecce2011-06-15T21:45:02Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to 1 Jun. 2011)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted'''''<br />
<br />
'''[J5]''' A. Chini, '''V. Di Lecce''', F. Fantini, G. Meneghesso, and E. Zanoni, "Analysis of GaN HEMTs Failure Mechanisms during DC and large-signal RF Operation", ''submitted on '''IEEE Transactions on Electronic Devices''''' <br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J4]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on '''IEEE Transactions on Device and Material Reliability'''''.<br />
<br />
'''''– 2011 –'''''<br />
<br />
'''[J3] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", '''''Journal of Electronic Materials''''', Vol. 40, no. 4, Apr. 2011, pp. 362-368.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7656Valerio Di Lecce2010-11-05T11:18:52Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to 5 Nov. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J4] V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, G. Meneghesso, E. Zanoni, and A. Chini, "An Investigation of GaN HEMTs Electrical Degradation by Numerical Simulations of dc Characteristics and Scattering Parameters", ''accepted on '''Journal of Electronic Materials'''''.<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on '''IEEE Transactions on Device and Material Reliability'''''.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7652Valerio Di Lecce2010-10-25T08:20:07Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to Oct. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on '''IEEE Transactions on Device and Material Reliability'''''.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''19th European Heterostructure Technology Workshop—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7651Valerio Di Lecce2010-10-25T08:18:24Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to Oct. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on '''IEEE Transactions on Device and Material Reliability'''''.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted at the 19th European Workshop on Heterostructure Technology—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted at the 19th European Workshop on Heterostructure Technology—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7650Valerio Di Lecce2010-10-25T08:18:13Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to Sep. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on '''IEEE Transactions on Device and Material Reliability'''''.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted at the 19th European Workshop on Heterostructure Technology—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted at the 19th European Workshop on Heterostructure Technology—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7608Valerio Di Lecce2010-09-28T09:05:33Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to Sep. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on '''IEEE Transactions on Device and Material Reliability'''''.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", '''''Microelectronics Reliability''''', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", '''''IEEE Electron Device Letters''''', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted at the 19th European Workshop on Heterostructure Technology—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted at the 19th European Workshop on Heterostructure Technology—'''HETECH 2010''''', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—'''ESREF 2010''''', Gaeta (Italy), Oct. 2010.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—'''ESSDERC 2010''''', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—'''IEDM 2009''''', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—'''HETECH 2009''''', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—'''ICNS-8 2009''''', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—'''EuMW 2009''''', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—'''ESSDERC 2009''''', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—'''ISCS 2009''''', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—'''HETECH 2008''''', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7606Valerio Di Lecce2010-09-28T08:54:47Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to Sep. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted on IEEE Transactions on Device and Material Reliability''.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''Microelectronics Reliabilty'', Vol. 50, no. 9-11, Sep.-Nov. 2010, pp. 1523–1527.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023.<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''— Accepted'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010.<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—ESREF 2010'', Gaeta (Italy), Oct. 2010.<br />
<br />
'''''– 2010 –'''''<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—ESSDERC 2010'', Sevilla (Spain), Sep. 2010.<br />
<br />
'''''– 2009 –'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009.<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009.<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009.<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009.<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009.<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009.<br />
<br />
'''''– 2008 –'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HETECH 2008'', Venice (Italy), Nov. 2008.</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7605Valerio Di Lecce2010-09-27T10:57:25Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications (up to Sep. 2010)==<br />
<br />
● '''JOURNALS:'''<br />
<br />
'''''— Submitted/accepted —'''''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted for publication on IEEE Transaction on Device and Material Reliability''<br />
<br />
'''''— 2010 —'''''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''Microelectronics Reliabilty'', Vol. 50, Issues 9-11: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep.-Nov. 2010, pp. 1523–1527<br />
<br />
'''''— 2009 —'''''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br><br><br />
● '''CONFERENCES AND WORKSHOPS:'''<br />
<br />
'''''— Submitted/accepted —'''''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—ESREF 2010'', Gaeta (Italy), Oct. 2010<br />
<br />
'''''— 2010 —'''''<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—ESSDERC 2010'', Sevilla (Spain), Sep. 2010<br />
<br />
'''''— 2009 —'''''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''''— 2008 —'''''<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HETECH 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7578Valerio Di Lecce2010-09-20T09:26:05Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications ==<br />
● '''Journals:'''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted for publication on IEEE Transaction on Device and Material Reliability''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''Microelectronics Reliabilty'', Vol. 50, Issues 9-11: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep.-Nov. 2010, pp. 1523–1527<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
● '''Conferences and Workshops:'''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted for oral presentation at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—ESREF 2010'', Gaeta (Italy), Oct. 2010<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''40th European Solid-State Device Research Conference—ESSDERC 2010'', Sevilla (Spain), Sep. 2010<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7559Valerio Di Lecce2010-09-02T08:20:16Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications ==<br />
● '''Journals:'''<br />
<br />
'''[J3]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, and A. Chini, "The influence of interface states at Schottky junction on the large signal behavior of Copper-gate GaN HEMTs", ''accepted for publication on IEEE Transaction on Device and Material Reliability''<br />
<br />
'''[J2]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted for publication on Elsevier, Microelectronics Reliabilty, Vol. 50, Special Issue: 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010)''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
● '''Conferences and Workshops:'''<br />
<br />
'''[C13]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Study of GaN HEMTs degradation by numerical simulations of scattering parameters", ''accepted for poster presentation at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010<br />
<br />
'''[C12]''' M. Esposto, P. S. Park, D. N. Nath, S. Kryshnamoorthy, F. Akyol, '''V. Di Lecce''', A. Chini, and S. Rajan, "Design of GaN HEMTs for Power Switching Operation", ''accepted for oral presentation at the 19th European Workshop on Heterostructure Technology—HETECH 2010'', Fodele (Crete), Oct. 2010<br />
<br />
'''[C11]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, G. Meneghesso, E. Zanoni, F. Fantini, and A. Chini, "Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress", ''accepted for oral presentation at the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis—ESREF 2010'', Gaeta (Italy), Oct. 2010<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''accepted for oral presentation at the 40th European Solid-State Device Research Conference—ESSDERC 2010'', Sevilla (Spain), Sep. 2010<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HETECH 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7510Valerio Di Lecce2010-07-21T12:06:18Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications ==<br />
● '''Journals:'''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
● '''Conferences and Workshops:'''<br />
<br />
'''[C10]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, and A. Chini, "Study of GaN HEMTs Electrical Degradation by Means of Numerical Simulations", ''to be presented at the 40th European Solid-State Device Research Conference—ESSDERC 2010'', Sevilla (Spain), Sep. 2010<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7343Valerio Di Lecce2010-04-30T08:10:18Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br />
<br />
== Publications ==<br />
● '''Journals:'''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
● '''Conferences and Workshops:'''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7342Valerio Di Lecce2010-04-30T08:07:37Z<p>22051: </p>
<hr />
<div>[[File:VDL1.jpg|150px|left]]Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br><br />
<br />
== Publications ==<br />
<br><br />
'''Journals:'''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
<br />
'''Conferences and Workshops:'''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7340Valerio Di Lecce2010-04-30T07:58:29Z<p>22051: </p>
<hr />
<div>Ing. '''Valerio Di Lecce''', Ph.D. Student<br />
<br />
International Doctorate School in [http://www.ict.unimore.it Information and Communication Technologies] <br><br />
Course: ICT (Curriculum: Electronics and Telecommmunications)<br><br><br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: [mailto:valerio.dilecce@unimore.it valerio.dilecce@unimore.it]<br />
<br><br />
<br><br />
Valerio Di Lecce was born in Modena, Italy, in 1982. He received the bachelor and master degree in electronic engineering (both summa cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 2005 and 2008, respectively. Since 2009, he has been working toward the Ph.D. degree in electronics and telecommunications engineering with the Department of Information Engineering, within the University of Modena and Reggio Emilia, Modena, Italy, on the topic "Characterization and numerical simulations of GaN HEMTs for microwave and millimeter-wave power applications".<br><br><br />
<br />
== Publications ==<br />
<br><br />
'''Journals:'''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
<br />
'''Conferences and Workshops:'''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7332Valerio Di Lecce2010-04-29T13:36:32Z<p>22051: </p>
<hr />
<div>Ing. Valerio Di Lecce<br><br />
Ph.D. Student, 24th Cycle<br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: valerio.dilecce@unimore.it<br />
<br><br><br />
<br />
== Publications ==<br />
<br><br />
'''Journals:'''<br />
<br />
'''[J1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
<br />
<br />
'''Conferences and Workshops:'''<br />
<br />
'''[C9]''' A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009<br />
<br />
'''[C8]''' D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C7]''' M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C6]''' '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
<br />
'''[C5]''' G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
<br />
'''[C4]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
<br />
'''[C3]''' M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
<br />
'''[C2]''' E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
<br />
'''[C1]''' A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008</div>22051https://web.ing.unimo.it/wiki/index.php?title=DII/Users_More_Info&diff=7331DII/Users More Info2010-04-29T13:25:16Z<p>22051: </p>
<hr />
<div># CHINI Alessandro<br />
user=Achini<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=045<br />
additional_phone=<br />
additional_email=<br />
<br />
# CORNI Alberto<br />
user=Acorni<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MAZZANTI Andrea<br />
user=Amazzanti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=045<br />
additional_phone=<br />
additional_email=<br />
<br />
# Carani Andrea<br />
user=Andrea.carani<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ANDREOLINI Mauro<br />
user=Andreolini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a20<br />
additional_phone=<br />
additional_email=<br />
<br />
# POLEMI Alessia<br />
user=Apolemi<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# PRATI Andrea<br />
user=Aprati<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.05<br />
additional_phone=<br />
additional_email=<br />
<br />
# Valenti Alessandro<br />
user=Avalenti<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZANASI ALESSANDRO<br />
user=Azanasi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Balugani Pietro<br />
user=Balupi25<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BENEVENTANO Domenico<br />
user=Benevent<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=012<br />
additional_phone=<br />
additional_email=<br />
<br />
# Bonaiuti Matteo<br />
user=Bonaiutim<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BONFATTI Flavio<br />
user=Bonfatti<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=016<br />
additional_phone=<br />
additional_email=<br />
<br />
# BORGARINO Mattia<br />
user=Borgarino<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=019<br />
additional_phone=<br />
additional_email=<br />
<br />
# CALDERARA Simone<br />
user=Calderara<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Aiello Carola<br />
user=Carola.aiello<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# GRANA Costantino<br />
user=Cgrana<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# CANALI Claudia<br />
user=Clcanali<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a10<br />
additional_phone=<br />
additional_email=<br />
<br />
# COLAJANNI Michele<br />
user=Colajan<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=022<br />
additional_phone=<br />
additional_email=<br />
<br />
# Reggiani Chiara<br />
user=Creggiani<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CUCCHIARA Rita<br />
user=Cucchiara<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# Gozzi Daniele<br />
user=Danielegozzi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Bonfatti Daniele<br />
user=Dbonfatt<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Costi Dario<br />
user=Dcosti<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CREA Domenico<br />
user=Dcrea<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DI IASIO Elvira<br />
user=Ediiasio<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=021<br />
additional_phone=<br />
additional_email=<br />
<br />
# Domnori Elton<br />
user=Eltondomnori<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Perini Emanuele<br />
user=Eperini<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# FANTINI Fausto<br />
user=Fantini<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=024<br />
additional_phone=<br />
additional_email=<br />
<br />
# GUERRA Francesco<br />
user=Fguerra<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# MANDREOLI Federica<br />
user=Fmandreoli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a19<br />
additional_phone=<br />
additional_email=<br />
<br />
# FORMENTINI Roberto<br />
user=Formenti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=026<br />
additional_phone=<br />
additional_email=<br />
<br />
# PANCALDI Fabrizio<br />
user=Fpancaldi<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028<br />
additional_phone=<br />
additional_email=<br />
<br />
# CABRI Giacomo<br />
user=Gcabri<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=013<br />
additional_phone=<br />
additional_email=<br />
<br />
# Giustini Giancarlo<br />
user=Ggiustin<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.12<br />
additional_phone=<br />
additional_email=<br />
<br />
# IMMOVILLI Gianni<br />
user=Gimmovil<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=008<br />
additional_phone=<br />
additional_email=<br />
<br />
# Pistoni Giuliano<br />
user=Gpistoni<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi001 Valerio001<br />
user=Ingl0901<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi002 Valerio002<br />
user=Ingl0902<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi003 Valerio003<br />
user=Ingl0903<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi004 Valerio004<br />
user=Ingl0904<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi005 Valerio005<br />
user=Ingl0905<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi006 Valerio006<br />
user=Ingl0906<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi007 Valerio007<br />
user=Ingl0907<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi008 Valerio008<br />
user=Ingl0908<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi009 Valerio009<br />
user=Ingl0909<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi010 Valerio010<br />
user=Ingl0910<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi011 Valerio011<br />
user=Ingl0911<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi012 Valerio012<br />
user=Ingl0912<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi013 Valerio013<br />
user=Ingl0913<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi014 Valerio014<br />
user=Ingl0914<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi015 Valerio015<br />
user=Ingl0915<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi016 Valerio016<br />
user=Ingl0916<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi017 Valerio017<br />
user=Ingl0917<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi018 Valerio018<br />
user=Ingl0918<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi019 Valerio019<br />
user=Ingl0919<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi020 Valerio020<br />
user=Ingl0920<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi021 Valerio021<br />
user=Ingl0921<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi022 Valerio022<br />
user=Ingl0922<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi023 Valerio023<br />
user=Ingl0923<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi024 Valerio024<br />
user=Ingl0924<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi025 Valerio025<br />
user=Ingl0925<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi026 Valerio026<br />
user=Ingl0926<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi027 Valerio027<br />
user=Ingl0927<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi028 Valerio028<br />
user=Ingl0928<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi029 Valerio029<br />
user=Ingl0929<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi030 Valerio030<br />
user=Ingl0930<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi031 Valerio031<br />
user=Ingl0931<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi032 Valerio032<br />
user=Ingl0932<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi033 Valerio033<br />
user=Ingl0933<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi034 Valerio034<br />
user=Ingl0934<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi035 Valerio035<br />
user=Ingl0935<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi036 Valerio036<br />
user=Ingl0936<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi037 Valerio037<br />
user=Ingl0937<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi038 Valerio038<br />
user=Ingl0938<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi039 Valerio039<br />
user=Ingl0939<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi040 Valerio040<br />
user=Ingl0940<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi041 Valerio041<br />
user=Ingl0941<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi042 Valerio042<br />
user=Ingl0942<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BIAGIOTTI Luigi<br />
user=Lbiagiotti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=017<br />
additional_phone=<br />
additional_email=<br />
<br />
# LEONCINI Mauro<br />
user=Leoncini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=015<br />
additional_phone=<br />
additional_email=<br />
<br />
# LEONARDI Letizia<br />
user=Letizia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=019<br />
additional_phone=<br />
additional_email=<br />
<br />
# LAURORA Livio Stefano<br />
user=Livio<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=02<br />
additional_phone=<br />
additional_email=<br />
<br />
# Lanzoni Luca<br />
user=Llanzoni<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# LARCHER Luca<br />
user=Llarcher<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# ROVATI Luigi<br />
user=Lrovati<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=018<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCETTI Luca<br />
user=Lvincetti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=010<br />
additional_phone=<br />
additional_email=<br />
<br />
# PETTENUZZO Marco<br />
user=Marco.pettenuzzo<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=036<br />
additional_phone=<br />
additional_email=<br />
<br />
# Puviani Mariachiara<br />
user=Mariachiara.puviani<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.16<br />
additional_phone=<br />
additional_email=<br />
<br />
# MASSARINI Antonio<br />
user=Massari<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=020<br />
additional_phone=<br />
additional_email=<br />
<br />
# Barbi Marco<br />
user=Mbarbi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASONI Maurizio<br />
user=Mcasoni<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=021<br />
additional_phone=<br />
additional_email=<br />
<br />
# Di Gioia Matteo<br />
user=Mdigioia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# MERANI Maria Luisa<br />
user=Merani<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=022<br />
additional_phone=<br />
additional_email=<br />
<br />
# MAINI Moreno<br />
user=Mmaini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARCHETTI Mirco<br />
user=Mmarchetti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.08<br />
additional_phone=+39 059 2056143<br />
additional_email=mirco.marchetti @unimore.it<br />
<br />
# MONTANGERO Manuela<br />
user=Mmontangero<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCINI Maurizio<br />
user=Mvincini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=014<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZACCARELLI Monica<br />
user=Mzaccarelli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=17<br />
additional_phone=<br />
additional_email=<br />
<br />
# ORSINI Mirko<br />
user=Orsini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# PICCININI PAOLO<br />
user=P.piccinini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# VALENTE Paolo<br />
user=Paolo.valente<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a20<br />
additional_phone=<br />
additional_email=<br />
<br />
# PAVAN Paolo<br />
user=Pavan<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# PAZZI Luca<br />
user=Pazzi<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# Monari Paola Daniela<br />
user=Pmonari<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=016<br />
additional_phone=<br />
additional_email=<br />
<br />
# Trillo Raquel<br />
user=Raqueltl<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# LANCELLOTTI Riccardo<br />
user=Rlancellotti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# Lenzi Rita<br />
user=Rlenzi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARTOGLIA Riccardo<br />
user=Rmartoglia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a19<br />
additional_phone=<br />
additional_email=<br />
<br />
# Melli Rudy Mirko<br />
user=Rmelli<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# VEZZANI Roberto<br />
user=Rvezzani<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a10<br />
additional_phone=<br />
additional_email=<br />
<br />
# SASSATELLI Simona<br />
user=Sassatelli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.02<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASOLARI Sara<br />
user=Scasolari<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# SCORCIONI STEFANO<br />
user=Scorcio<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BERGAMASCHI Sonia<br />
user=Sonia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# CATTINI Stefano<br />
user=Stcattini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.12<br />
additional_phone=+39 059 2056109<br />
additional_email=<br />
<br />
# TIBERIO Paolo<br />
user=Tiberio<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=017<br />
additional_phone=<br />
additional_email=<br />
<br />
# RONGIONE Valeria<br />
user=V.rongione<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# VERRINI Nadia<br />
user=Verrini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=003<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCENZI Valerio<br />
user=Vincenzi<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=34<br />
additional_phone=<br />
additional_email=<br />
<br />
# VITETTA Giorgio Matteo<br />
user=Vitetta<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=046<br />
additional_phone=<br />
additional_email=<br />
<br />
# Penzo Wilma<br />
user=Wpenzo<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZAMBONELLI Franco<br />
user=Zambonelli<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.04<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZANASI Roberto<br />
user=Zanaro25<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=a17<br />
additional_phone=<br />
additional_email=<br />
<br />
# Albinelli Dario<br />
user=Zinedine<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZOBOLI Maurizio<br />
user=Zoboli<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=009<br />
additional_phone=<br />
additional_email=<br />
<br />
# CALZOLARI DIEGO<br />
user=12529<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PICCININI PAOLO<br />
user=12647<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# ANSALONI LUCA<br />
user=19488<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PALMIERI LORENZO<br />
user=22017<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.05<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARTINELLI LUCA<br />
user=22030<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.03<br />
additional_phone=+39 059 205 6331<br />
additional_email=<br />
<br />
# DI LECCE VALERIO<br />
user=22051<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=016<br />
additional_phone=+39 059 2056191<br />
additional_email=<br />
<br />
# PRADELLI MARCO<br />
user=22104<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.02<br />
additional_phone=+39 059 2056110<br />
additional_email=<br />
<br />
# BARBIERI ALESSANDRO<br />
user=22153<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# BORGHESANI DANIELE<br />
user=22278<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.02<br />
additional_phone=+39 059 2056270<br />
additional_email=<br />
<br />
# RICCIARDI ANTONIO<br />
user=24322<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DOMNORI ELTON<br />
user=29844<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.13<br />
additional_phone=+39 059 2056322<br />
additional_email=<br />
<br />
# SORRENTINO SERENA<br />
user=30977<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.03<br />
additional_phone=<br />
additional_email=<br />
<br />
# DERMIT DAVIDE<br />
user=31838<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.13<br />
additional_phone=<br />
additional_email=<br />
<br />
# LUCCHI PAOLO<br />
user=31879<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.11<br />
additional_phone=<br />
additional_email=<br />
<br />
# AZZONE GIOVANNI<br />
user=32456<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# ESPOSTO MICHELE<br />
user=32490<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.04<br />
additional_phone=<br />
additional_email=<br />
<br />
# MONACO ENRICO<br />
user=32811<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# BERTARELLI FABIO<br />
user=37411<br />
location_building=MO-25<br />
location_floor=00<br />
location_room=014/S.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MESSORI MICHELE<br />
user=40322<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.11<br />
additional_phone=<br />
additional_email=<br />
<br />
# QUITADAMO RAFFAELE<br />
user=49543<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PIFFERI MARCO<br />
user=49544<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZUCCARDI MERLI FILIPPO<br />
user=49545<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASOLARI SARA<br />
user=49546<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# BONAIUTI MATTEO<br />
user=49547<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.14<br />
additional_phone=<br />
additional_email=<br />
<br />
# RONCHETTI ENRICO<br />
user=49548<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DE MOLA FRANCESCO<br />
user=56877<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.14<br />
additional_phone=<br />
additional_email=<br />
<br />
# PO LAURA<br />
user=56884<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.08<br />
additional_phone=+39 059 2056264<br />
additional_email=<br />
<br />
# MARCHETTI MIRCO<br />
user=56885<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# SASSATELLI SIMONA<br />
user=56886<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.02<br />
additional_phone=+39 059 2056309<br />
additional_email=simona.sassatelli @unimo.it<br />
<br />
# CALDERARA SIMONE<br />
user=56887<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# CHIESI FABIO<br />
user=56888<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# FAQIR MUSTAPHA<br />
user=56889<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# CATTINI STEFANO<br />
user=56890<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.12<br />
additional_phone=+39 059 2056109<br />
additional_email=<br />
<br />
# DONDI DENIS<br />
user=56891<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DUCATI FABIO<br />
user=56896<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.10<br />
additional_phone=<br />
additional_email=<br />
<br />
# ORSINI MIRKO<br />
user=56897<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.06<br />
additional_phone=+39 059 2056272<br />
additional_email=<br />
<br />
# CUOGHI STEFANIA<br />
user=62899<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.10<br />
additional_phone=<br />
additional_email=<br />
<br />
# SALA ANTONIO<br />
user=63289<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.05<br />
additional_phone=+39 059 2056272<br />
additional_email=<br />
<br />
# SERGI SIMONE<br />
user=63301<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# PUVIANI MARIACHIARA<br />
user=63339<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.16<br />
additional_phone=<br />
additional_email=<br />
<br />
# NANA MBINKEU RODRIGUE CARLOS<br />
user=63340<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# GUALDI GIOVANNI<br />
user=63341<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.03<br />
additional_phone=<br />
additional_email=<br />
<br />
# VILLANI GIORGIO<br />
user=63352<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.01<br />
additional_phone=+39 059 2056309<br />
additional_email=<br />
<br />
# GROSSI FEDERICA<br />
user=63353<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/P2.02<br />
additional_phone=059 205 6333<br />
additional_email=<br />
<br />
# CORVINO CHRISTIAN ALESSANDRO<br />
user=64168<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# FEDERICO MARIA<br />
user=70063<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# SALADINO DANIELA<br />
user=70090<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.04<br />
additional_phone=+39 059 205 6323<br />
additional_email=<br />
<br />
# GAWINECKI MACIEJ<br />
user=70927<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.15<br />
additional_phone=<br />
additional_email=<br />
<br />
# HAIDER RAZIA<br />
user=76465<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# SANTINELLI PAOLO<br />
user=76466<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.04<br />
additional_phone=+39059205 6270<br />
additional_email=<br />
<br />
# PALANISAMY NITHIYANANTHAM<br />
user=76473<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.11<br />
additional_phone=<br />
additional_email=</div>22051https://web.ing.unimo.it/wiki/index.php?title=DII/Users_More_Info&diff=7322DII/Users More Info2010-04-23T12:06:30Z<p>22051: </p>
<hr />
<div># CHINI Alessandro<br />
user=Achini<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=045<br />
additional_phone=<br />
additional_email=<br />
<br />
# CORNI Alberto<br />
user=Acorni<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MAZZANTI Andrea<br />
user=Amazzanti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=045<br />
additional_phone=<br />
additional_email=<br />
<br />
# Carani Andrea<br />
user=Andrea.carani<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ANDREOLINI Mauro<br />
user=Andreolini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a20<br />
additional_phone=<br />
additional_email=<br />
<br />
# POLEMI Alessia<br />
user=Apolemi<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# PRATI Andrea<br />
user=Aprati<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.05<br />
additional_phone=<br />
additional_email=<br />
<br />
# Valenti Alessandro<br />
user=Avalenti<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZANASI ALESSANDRO<br />
user=Azanasi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Balugani Pietro<br />
user=Balupi25<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BENEVENTANO Domenico<br />
user=Benevent<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=012<br />
additional_phone=<br />
additional_email=<br />
<br />
# Bonaiuti Matteo<br />
user=Bonaiutim<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BONFATTI Flavio<br />
user=Bonfatti<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=016<br />
additional_phone=<br />
additional_email=<br />
<br />
# BORGARINO Mattia<br />
user=Borgarino<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=019<br />
additional_phone=<br />
additional_email=<br />
<br />
# CALDERARA Simone<br />
user=Calderara<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Aiello Carola<br />
user=Carola.aiello<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# GRANA Costantino<br />
user=Cgrana<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# CANALI Claudia<br />
user=Clcanali<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a10<br />
additional_phone=<br />
additional_email=<br />
<br />
# COLAJANNI Michele<br />
user=Colajan<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=022<br />
additional_phone=<br />
additional_email=<br />
<br />
# Reggiani Chiara<br />
user=Creggiani<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CUCCHIARA Rita<br />
user=Cucchiara<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# Gozzi Daniele<br />
user=Danielegozzi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Bonfatti Daniele<br />
user=Dbonfatt<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Costi Dario<br />
user=Dcosti<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CREA Domenico<br />
user=Dcrea<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DI IASIO Elvira<br />
user=Ediiasio<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=021<br />
additional_phone=<br />
additional_email=<br />
<br />
# Domnori Elton<br />
user=Eltondomnori<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Perini Emanuele<br />
user=Eperini<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# FANTINI Fausto<br />
user=Fantini<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=024<br />
additional_phone=<br />
additional_email=<br />
<br />
# GUERRA Francesco<br />
user=Fguerra<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# MANDREOLI Federica<br />
user=Fmandreoli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a19<br />
additional_phone=<br />
additional_email=<br />
<br />
# FORMENTINI Roberto<br />
user=Formenti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=026<br />
additional_phone=<br />
additional_email=<br />
<br />
# PANCALDI Fabrizio<br />
user=Fpancaldi<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028<br />
additional_phone=<br />
additional_email=<br />
<br />
# CABRI Giacomo<br />
user=Gcabri<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=013<br />
additional_phone=<br />
additional_email=<br />
<br />
# Giustini Giancarlo<br />
user=Ggiustin<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.12<br />
additional_phone=<br />
additional_email=<br />
<br />
# IMMOVILLI Gianni<br />
user=Gimmovil<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=008<br />
additional_phone=<br />
additional_email=<br />
<br />
# Pistoni Giuliano<br />
user=Gpistoni<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi001 Valerio001<br />
user=Ingl0901<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi002 Valerio002<br />
user=Ingl0902<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi003 Valerio003<br />
user=Ingl0903<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi004 Valerio004<br />
user=Ingl0904<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi005 Valerio005<br />
user=Ingl0905<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi006 Valerio006<br />
user=Ingl0906<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi007 Valerio007<br />
user=Ingl0907<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi008 Valerio008<br />
user=Ingl0908<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi009 Valerio009<br />
user=Ingl0909<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi010 Valerio010<br />
user=Ingl0910<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi011 Valerio011<br />
user=Ingl0911<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi012 Valerio012<br />
user=Ingl0912<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi013 Valerio013<br />
user=Ingl0913<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi014 Valerio014<br />
user=Ingl0914<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi015 Valerio015<br />
user=Ingl0915<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi016 Valerio016<br />
user=Ingl0916<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi017 Valerio017<br />
user=Ingl0917<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi018 Valerio018<br />
user=Ingl0918<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi019 Valerio019<br />
user=Ingl0919<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi020 Valerio020<br />
user=Ingl0920<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi021 Valerio021<br />
user=Ingl0921<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi022 Valerio022<br />
user=Ingl0922<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi023 Valerio023<br />
user=Ingl0923<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi024 Valerio024<br />
user=Ingl0924<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi025 Valerio025<br />
user=Ingl0925<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi026 Valerio026<br />
user=Ingl0926<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi027 Valerio027<br />
user=Ingl0927<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi028 Valerio028<br />
user=Ingl0928<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi029 Valerio029<br />
user=Ingl0929<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi030 Valerio030<br />
user=Ingl0930<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi031 Valerio031<br />
user=Ingl0931<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi032 Valerio032<br />
user=Ingl0932<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi033 Valerio033<br />
user=Ingl0933<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi034 Valerio034<br />
user=Ingl0934<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi035 Valerio035<br />
user=Ingl0935<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi036 Valerio036<br />
user=Ingl0936<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi037 Valerio037<br />
user=Ingl0937<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi038 Valerio038<br />
user=Ingl0938<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi039 Valerio039<br />
user=Ingl0939<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi040 Valerio040<br />
user=Ingl0940<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi041 Valerio041<br />
user=Ingl0941<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi042 Valerio042<br />
user=Ingl0942<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BIAGIOTTI Luigi<br />
user=Lbiagiotti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=017<br />
additional_phone=<br />
additional_email=<br />
<br />
# LEONCINI Mauro<br />
user=Leoncini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=015<br />
additional_phone=<br />
additional_email=<br />
<br />
# LEONARDI Letizia<br />
user=Letizia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=019<br />
additional_phone=<br />
additional_email=<br />
<br />
# LAURORA Livio Stefano<br />
user=Livio<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=02<br />
additional_phone=<br />
additional_email=<br />
<br />
# Lanzoni Luca<br />
user=Llanzoni<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# LARCHER Luca<br />
user=Llarcher<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# ROVATI Luigi<br />
user=Lrovati<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=018<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCETTI Luca<br />
user=Lvincetti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=010<br />
additional_phone=<br />
additional_email=<br />
<br />
# PETTENUZZO Marco<br />
user=Marco.pettenuzzo<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=036<br />
additional_phone=<br />
additional_email=<br />
<br />
# Puviani Mariachiara<br />
user=Mariachiara.puviani<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.16<br />
additional_phone=<br />
additional_email=<br />
<br />
# MASSARINI Antonio<br />
user=Massari<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=020<br />
additional_phone=<br />
additional_email=<br />
<br />
# Barbi Marco<br />
user=Mbarbi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASONI Maurizio<br />
user=Mcasoni<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=021<br />
additional_phone=<br />
additional_email=<br />
<br />
# Di Gioia Matteo<br />
user=Mdigioia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# MERANI Maria Luisa<br />
user=Merani<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=022<br />
additional_phone=<br />
additional_email=<br />
<br />
# MAINI Moreno<br />
user=Mmaini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARCHETTI Mirco<br />
user=Mmarchetti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.08<br />
additional_phone=+39 059 2056143<br />
additional_email=mirco.marchetti @unimore.it<br />
<br />
# MONTANGERO Manuela<br />
user=Mmontangero<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCINI Maurizio<br />
user=Mvincini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=014<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZACCARELLI Monica<br />
user=Mzaccarelli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=17<br />
additional_phone=<br />
additional_email=<br />
<br />
# ORSINI Mirko<br />
user=Orsini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# PICCININI PAOLO<br />
user=P.piccinini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# VALENTE Paolo<br />
user=Paolo.valente<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a20<br />
additional_phone=<br />
additional_email=<br />
<br />
# PAVAN Paolo<br />
user=Pavan<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# PAZZI Luca<br />
user=Pazzi<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# Monari Paola Daniela<br />
user=Pmonari<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=016<br />
additional_phone=<br />
additional_email=<br />
<br />
# Trillo Raquel<br />
user=Raqueltl<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# LANCELLOTTI Riccardo<br />
user=Rlancellotti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# Lenzi Rita<br />
user=Rlenzi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARTOGLIA Riccardo<br />
user=Rmartoglia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a19<br />
additional_phone=<br />
additional_email=<br />
<br />
# Melli Rudy Mirko<br />
user=Rmelli<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# VEZZANI Roberto<br />
user=Rvezzani<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a10<br />
additional_phone=<br />
additional_email=<br />
<br />
# SASSATELLI Simona<br />
user=Sassatelli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.02<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASOLARI Sara<br />
user=Scasolari<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# SCORCIONI STEFANO<br />
user=Scorcio<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BERGAMASCHI Sonia<br />
user=Sonia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# CATTINI Stefano<br />
user=Stcattini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.12<br />
additional_phone=+39 059 2056109<br />
additional_email=<br />
<br />
# TIBERIO Paolo<br />
user=Tiberio<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=017<br />
additional_phone=<br />
additional_email=<br />
<br />
# RONGIONE Valeria<br />
user=V.rongione<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# VERRINI Nadia<br />
user=Verrini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=003<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCENZI Valerio<br />
user=Vincenzi<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=34<br />
additional_phone=<br />
additional_email=<br />
<br />
# VITETTA Giorgio Matteo<br />
user=Vitetta<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=046<br />
additional_phone=<br />
additional_email=<br />
<br />
# Penzo Wilma<br />
user=Wpenzo<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZAMBONELLI Franco<br />
user=Zambonelli<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.04<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZANASI Roberto<br />
user=Zanaro25<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=a17<br />
additional_phone=<br />
additional_email=<br />
<br />
# Albinelli Dario<br />
user=Zinedine<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZOBOLI Maurizio<br />
user=Zoboli<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=009<br />
additional_phone=<br />
additional_email=<br />
<br />
# CALZOLARI DIEGO<br />
user=12529<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PICCININI PAOLO<br />
user=12647<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# ANSALONI LUCA<br />
user=19488<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PALMIERI LORENZO<br />
user=22017<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.05<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARTINELLI LUCA<br />
user=22030<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.03<br />
additional_phone=+39 059 205 6331<br />
additional_email=<br />
<br />
# DI LECCE VALERIO<br />
user=22051<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=016<br />
additional_phone=+39-059-2056191<br />
additional_email=<br />
<br />
# PRADELLI MARCO<br />
user=22104<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.02<br />
additional_phone=+39 059 2056110<br />
additional_email=<br />
<br />
# BARBIERI ALESSANDRO<br />
user=22153<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# BORGHESANI DANIELE<br />
user=22278<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.02<br />
additional_phone=+39 059 2056270<br />
additional_email=<br />
<br />
# RICCIARDI ANTONIO<br />
user=24322<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DOMNORI ELTON<br />
user=29844<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.13<br />
additional_phone=+39 059 2056322<br />
additional_email=<br />
<br />
# SORRENTINO SERENA<br />
user=30977<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.03<br />
additional_phone=<br />
additional_email=<br />
<br />
# DERMIT DAVIDE<br />
user=31838<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.13<br />
additional_phone=<br />
additional_email=<br />
<br />
# LUCCHI PAOLO<br />
user=31879<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.11<br />
additional_phone=<br />
additional_email=<br />
<br />
# AZZONE GIOVANNI<br />
user=32456<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# ESPOSTO MICHELE<br />
user=32490<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.04<br />
additional_phone=<br />
additional_email=<br />
<br />
# MONACO ENRICO<br />
user=32811<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# BERTARELLI FABIO<br />
user=37411<br />
location_building=MO-25<br />
location_floor=00<br />
location_room=014/S.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MESSORI MICHELE<br />
user=40322<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.11<br />
additional_phone=<br />
additional_email=<br />
<br />
# QUITADAMO RAFFAELE<br />
user=49543<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PIFFERI MARCO<br />
user=49544<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZUCCARDI MERLI FILIPPO<br />
user=49545<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASOLARI SARA<br />
user=49546<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# BONAIUTI MATTEO<br />
user=49547<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.14<br />
additional_phone=<br />
additional_email=<br />
<br />
# RONCHETTI ENRICO<br />
user=49548<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DE MOLA FRANCESCO<br />
user=56877<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.14<br />
additional_phone=<br />
additional_email=<br />
<br />
# PO LAURA<br />
user=56884<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.08<br />
additional_phone=+39 059 2056264<br />
additional_email=<br />
<br />
# MARCHETTI MIRCO<br />
user=56885<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# SASSATELLI SIMONA<br />
user=56886<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.02<br />
additional_phone=+39 059 2056309<br />
additional_email=simona.sassatelli @unimo.it<br />
<br />
# CALDERARA SIMONE<br />
user=56887<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# CHIESI FABIO<br />
user=56888<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# FAQIR MUSTAPHA<br />
user=56889<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# CATTINI STEFANO<br />
user=56890<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.12<br />
additional_phone=+39 059 2056109<br />
additional_email=<br />
<br />
# DONDI DENIS<br />
user=56891<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DUCATI FABIO<br />
user=56896<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.10<br />
additional_phone=<br />
additional_email=<br />
<br />
# ORSINI MIRKO<br />
user=56897<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.06<br />
additional_phone=+39 059 2056272<br />
additional_email=<br />
<br />
# CUOGHI STEFANIA<br />
user=62899<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.10<br />
additional_phone=<br />
additional_email=<br />
<br />
# SALA ANTONIO<br />
user=63289<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.05<br />
additional_phone=+39 059 2056272<br />
additional_email=<br />
<br />
# SERGI SIMONE<br />
user=63301<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# PUVIANI MARIACHIARA<br />
user=63339<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.16<br />
additional_phone=<br />
additional_email=<br />
<br />
# NANA MBINKEU RODRIGUE CARLOS<br />
user=63340<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# GUALDI GIOVANNI<br />
user=63341<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.03<br />
additional_phone=<br />
additional_email=<br />
<br />
# VILLANI GIORGIO<br />
user=63352<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.01<br />
additional_phone=+39 059 2056309<br />
additional_email=<br />
<br />
# GROSSI FEDERICA<br />
user=63353<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/P2.02<br />
additional_phone=059 205 6333<br />
additional_email=<br />
<br />
# CORVINO CHRISTIAN ALESSANDRO<br />
user=64168<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# FEDERICO MARIA<br />
user=70063<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# SALADINO DANIELA<br />
user=70090<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.04<br />
additional_phone=+39 059 205 6323<br />
additional_email=<br />
<br />
# GAWINECKI MACIEJ<br />
user=70927<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.15<br />
additional_phone=<br />
additional_email=<br />
<br />
# HAIDER RAZIA<br />
user=76465<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# SANTINELLI PAOLO<br />
user=76466<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.04<br />
additional_phone=+39059205 6270<br />
additional_email=<br />
<br />
# PALANISAMY NITHIYANANTHAM<br />
user=76473<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.11<br />
additional_phone=<br />
additional_email=</div>22051https://web.ing.unimo.it/wiki/index.php?title=DII/Users_More_Info&diff=7321DII/Users More Info2010-04-23T12:03:28Z<p>22051: </p>
<hr />
<div># CHINI Alessandro<br />
user=Achini<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=045<br />
additional_phone=<br />
additional_email=<br />
<br />
# CORNI Alberto<br />
user=Acorni<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MAZZANTI Andrea<br />
user=Amazzanti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=045<br />
additional_phone=<br />
additional_email=<br />
<br />
# Carani Andrea<br />
user=Andrea.carani<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ANDREOLINI Mauro<br />
user=Andreolini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a20<br />
additional_phone=<br />
additional_email=<br />
<br />
# POLEMI Alessia<br />
user=Apolemi<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# PRATI Andrea<br />
user=Aprati<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.05<br />
additional_phone=<br />
additional_email=<br />
<br />
# Valenti Alessandro<br />
user=Avalenti<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZANASI ALESSANDRO<br />
user=Azanasi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Balugani Pietro<br />
user=Balupi25<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BENEVENTANO Domenico<br />
user=Benevent<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=012<br />
additional_phone=<br />
additional_email=<br />
<br />
# Bonaiuti Matteo<br />
user=Bonaiutim<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BONFATTI Flavio<br />
user=Bonfatti<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=016<br />
additional_phone=<br />
additional_email=<br />
<br />
# BORGARINO Mattia<br />
user=Borgarino<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=019<br />
additional_phone=<br />
additional_email=<br />
<br />
# CALDERARA Simone<br />
user=Calderara<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Aiello Carola<br />
user=Carola.aiello<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# GRANA Costantino<br />
user=Cgrana<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# CANALI Claudia<br />
user=Clcanali<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a10<br />
additional_phone=<br />
additional_email=<br />
<br />
# COLAJANNI Michele<br />
user=Colajan<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=022<br />
additional_phone=<br />
additional_email=<br />
<br />
# Reggiani Chiara<br />
user=Creggiani<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CUCCHIARA Rita<br />
user=Cucchiara<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# Gozzi Daniele<br />
user=Danielegozzi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Bonfatti Daniele<br />
user=Dbonfatt<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Costi Dario<br />
user=Dcosti<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CREA Domenico<br />
user=Dcrea<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DI IASIO Elvira<br />
user=Ediiasio<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=021<br />
additional_phone=<br />
additional_email=<br />
<br />
# Domnori Elton<br />
user=Eltondomnori<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Perini Emanuele<br />
user=Eperini<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# FANTINI Fausto<br />
user=Fantini<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=024<br />
additional_phone=<br />
additional_email=<br />
<br />
# GUERRA Francesco<br />
user=Fguerra<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# MANDREOLI Federica<br />
user=Fmandreoli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a19<br />
additional_phone=<br />
additional_email=<br />
<br />
# FORMENTINI Roberto<br />
user=Formenti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=026<br />
additional_phone=<br />
additional_email=<br />
<br />
# PANCALDI Fabrizio<br />
user=Fpancaldi<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028<br />
additional_phone=<br />
additional_email=<br />
<br />
# CABRI Giacomo<br />
user=Gcabri<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=013<br />
additional_phone=<br />
additional_email=<br />
<br />
# Giustini Giancarlo<br />
user=Ggiustin<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.12<br />
additional_phone=<br />
additional_email=<br />
<br />
# IMMOVILLI Gianni<br />
user=Gimmovil<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=008<br />
additional_phone=<br />
additional_email=<br />
<br />
# Pistoni Giuliano<br />
user=Gpistoni<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi001 Valerio001<br />
user=Ingl0901<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi002 Valerio002<br />
user=Ingl0902<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi003 Valerio003<br />
user=Ingl0903<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi004 Valerio004<br />
user=Ingl0904<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi005 Valerio005<br />
user=Ingl0905<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi006 Valerio006<br />
user=Ingl0906<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi007 Valerio007<br />
user=Ingl0907<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi008 Valerio008<br />
user=Ingl0908<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi009 Valerio009<br />
user=Ingl0909<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi010 Valerio010<br />
user=Ingl0910<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi011 Valerio011<br />
user=Ingl0911<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi012 Valerio012<br />
user=Ingl0912<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi013 Valerio013<br />
user=Ingl0913<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi014 Valerio014<br />
user=Ingl0914<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi015 Valerio015<br />
user=Ingl0915<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi016 Valerio016<br />
user=Ingl0916<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi017 Valerio017<br />
user=Ingl0917<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi018 Valerio018<br />
user=Ingl0918<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi019 Valerio019<br />
user=Ingl0919<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi020 Valerio020<br />
user=Ingl0920<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi021 Valerio021<br />
user=Ingl0921<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi022 Valerio022<br />
user=Ingl0922<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi023 Valerio023<br />
user=Ingl0923<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi024 Valerio024<br />
user=Ingl0924<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi025 Valerio025<br />
user=Ingl0925<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi026 Valerio026<br />
user=Ingl0926<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi027 Valerio027<br />
user=Ingl0927<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi028 Valerio028<br />
user=Ingl0928<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi029 Valerio029<br />
user=Ingl0929<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi030 Valerio030<br />
user=Ingl0930<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi031 Valerio031<br />
user=Ingl0931<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi032 Valerio032<br />
user=Ingl0932<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi033 Valerio033<br />
user=Ingl0933<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi034 Valerio034<br />
user=Ingl0934<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi035 Valerio035<br />
user=Ingl0935<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi036 Valerio036<br />
user=Ingl0936<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi037 Valerio037<br />
user=Ingl0937<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi038 Valerio038<br />
user=Ingl0938<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi039 Valerio039<br />
user=Ingl0939<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi040 Valerio040<br />
user=Ingl0940<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi041 Valerio041<br />
user=Ingl0941<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# Vincenzi042 Valerio042<br />
user=Ingl0942<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BIAGIOTTI Luigi<br />
user=Lbiagiotti<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=017<br />
additional_phone=<br />
additional_email=<br />
<br />
# LEONCINI Mauro<br />
user=Leoncini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=015<br />
additional_phone=<br />
additional_email=<br />
<br />
# LEONARDI Letizia<br />
user=Letizia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=019<br />
additional_phone=<br />
additional_email=<br />
<br />
# LAURORA Livio Stefano<br />
user=Livio<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=02<br />
additional_phone=<br />
additional_email=<br />
<br />
# Lanzoni Luca<br />
user=Llanzoni<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# LARCHER Luca<br />
user=Llarcher<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# ROVATI Luigi<br />
user=Lrovati<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=018<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCETTI Luca<br />
user=Lvincetti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=010<br />
additional_phone=<br />
additional_email=<br />
<br />
# PETTENUZZO Marco<br />
user=Marco.pettenuzzo<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=036<br />
additional_phone=<br />
additional_email=<br />
<br />
# Puviani Mariachiara<br />
user=Mariachiara.puviani<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.16<br />
additional_phone=<br />
additional_email=<br />
<br />
# MASSARINI Antonio<br />
user=Massari<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=020<br />
additional_phone=<br />
additional_email=<br />
<br />
# Barbi Marco<br />
user=Mbarbi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASONI Maurizio<br />
user=Mcasoni<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=021<br />
additional_phone=<br />
additional_email=<br />
<br />
# Di Gioia Matteo<br />
user=Mdigioia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# MERANI Maria Luisa<br />
user=Merani<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=022<br />
additional_phone=<br />
additional_email=<br />
<br />
# MAINI Moreno<br />
user=Mmaini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARCHETTI Mirco<br />
user=Mmarchetti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.08<br />
additional_phone=+39 059 2056143<br />
additional_email=mirco.marchetti @unimore.it<br />
<br />
# MONTANGERO Manuela<br />
user=Mmontangero<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCINI Maurizio<br />
user=Mvincini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=014<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZACCARELLI Monica<br />
user=Mzaccarelli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=17<br />
additional_phone=<br />
additional_email=<br />
<br />
# ORSINI Mirko<br />
user=Orsini<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# PICCININI PAOLO<br />
user=P.piccinini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# VALENTE Paolo<br />
user=Paolo.valente<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a20<br />
additional_phone=<br />
additional_email=<br />
<br />
# PAVAN Paolo<br />
user=Pavan<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=023<br />
additional_phone=<br />
additional_email=<br />
<br />
# PAZZI Luca<br />
user=Pazzi<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# Monari Paola Daniela<br />
user=Pmonari<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=016<br />
additional_phone=<br />
additional_email=<br />
<br />
# Trillo Raquel<br />
user=Raqueltl<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# LANCELLOTTI Riccardo<br />
user=Rlancellotti<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a11<br />
additional_phone=<br />
additional_email=<br />
<br />
# Lenzi Rita<br />
user=Rlenzi<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARTOGLIA Riccardo<br />
user=Rmartoglia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=a19<br />
additional_phone=<br />
additional_email=<br />
<br />
# Melli Rudy Mirko<br />
user=Rmelli<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# VEZZANI Roberto<br />
user=Rvezzani<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=a10<br />
additional_phone=<br />
additional_email=<br />
<br />
# SASSATELLI Simona<br />
user=Sassatelli<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.02<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASOLARI Sara<br />
user=Scasolari<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# SCORCIONI STEFANO<br />
user=Scorcio<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# BERGAMASCHI Sonia<br />
user=Sonia<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=011<br />
additional_phone=<br />
additional_email=<br />
<br />
# CATTINI Stefano<br />
user=Stcattini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.12<br />
additional_phone=+39 059 2056109<br />
additional_email=<br />
<br />
# TIBERIO Paolo<br />
user=Tiberio<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=017<br />
additional_phone=<br />
additional_email=<br />
<br />
# RONGIONE Valeria<br />
user=V.rongione<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# VERRINI Nadia<br />
user=Verrini<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=003<br />
additional_phone=<br />
additional_email=<br />
<br />
# VINCENZI Valerio<br />
user=Vincenzi<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=34<br />
additional_phone=<br />
additional_email=<br />
<br />
# VITETTA Giorgio Matteo<br />
user=Vitetta<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=046<br />
additional_phone=<br />
additional_email=<br />
<br />
# Penzo Wilma<br />
user=Wpenzo<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZAMBONELLI Franco<br />
user=Zambonelli<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.04<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZANASI Roberto<br />
user=Zanaro25<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=a17<br />
additional_phone=<br />
additional_email=<br />
<br />
# Albinelli Dario<br />
user=Zinedine<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZOBOLI Maurizio<br />
user=Zoboli<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=009<br />
additional_phone=<br />
additional_email=<br />
<br />
# CALZOLARI DIEGO<br />
user=12529<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PICCININI PAOLO<br />
user=12647<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# ANSALONI LUCA<br />
user=19488<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PALMIERI LORENZO<br />
user=22017<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.05<br />
additional_phone=<br />
additional_email=<br />
<br />
# MARTINELLI LUCA<br />
user=22030<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.03<br />
additional_phone=+39 059 205 6331<br />
additional_email=<br />
<br />
# DI LECCE VALERIO<br />
user=22051<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=016<br />
additional_phone=+39-059-2056191<br />
additional_email=valerio.dilecce@unimore.it<br />
<br />
# PRADELLI MARCO<br />
user=22104<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/B.02<br />
additional_phone=+39 059 2056110<br />
additional_email=<br />
<br />
# BARBIERI ALESSANDRO<br />
user=22153<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# BORGHESANI DANIELE<br />
user=22278<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.02<br />
additional_phone=+39 059 2056270<br />
additional_email=<br />
<br />
# RICCIARDI ANTONIO<br />
user=24322<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DOMNORI ELTON<br />
user=29844<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.13<br />
additional_phone=+39 059 2056322<br />
additional_email=<br />
<br />
# SORRENTINO SERENA<br />
user=30977<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.03<br />
additional_phone=<br />
additional_email=<br />
<br />
# DERMIT DAVIDE<br />
user=31838<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.13<br />
additional_phone=<br />
additional_email=<br />
<br />
# LUCCHI PAOLO<br />
user=31879<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.11<br />
additional_phone=<br />
additional_email=<br />
<br />
# AZZONE GIOVANNI<br />
user=32456<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# ESPOSTO MICHELE<br />
user=32490<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.04<br />
additional_phone=<br />
additional_email=<br />
<br />
# MONACO ENRICO<br />
user=32811<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# BERTARELLI FABIO<br />
user=37411<br />
location_building=MO-25<br />
location_floor=00<br />
location_room=014/S.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# MESSORI MICHELE<br />
user=40322<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.11<br />
additional_phone=<br />
additional_email=<br />
<br />
# QUITADAMO RAFFAELE<br />
user=49543<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# PIFFERI MARCO<br />
user=49544<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# ZUCCARDI MERLI FILIPPO<br />
user=49545<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# CASOLARI SARA<br />
user=49546<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# BONAIUTI MATTEO<br />
user=49547<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.14<br />
additional_phone=<br />
additional_email=<br />
<br />
# RONCHETTI ENRICO<br />
user=49548<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DE MOLA FRANCESCO<br />
user=56877<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.14<br />
additional_phone=<br />
additional_email=<br />
<br />
# PO LAURA<br />
user=56884<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.08<br />
additional_phone=+39 059 2056264<br />
additional_email=<br />
<br />
# MARCHETTI MIRCO<br />
user=56885<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.08<br />
additional_phone=<br />
additional_email=<br />
<br />
# SASSATELLI SIMONA<br />
user=56886<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.02<br />
additional_phone=+39 059 2056309<br />
additional_email=simona.sassatelli @unimo.it<br />
<br />
# CALDERARA SIMONE<br />
user=56887<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.01<br />
additional_phone=<br />
additional_email=<br />
<br />
# CHIESI FABIO<br />
user=56888<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.09<br />
additional_phone=<br />
additional_email=<br />
<br />
# FAQIR MUSTAPHA<br />
user=56889<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# CATTINI STEFANO<br />
user=56890<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.12<br />
additional_phone=+39 059 2056109<br />
additional_email=<br />
<br />
# DONDI DENIS<br />
user=56891<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# DUCATI FABIO<br />
user=56896<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=028/E2.10<br />
additional_phone=<br />
additional_email=<br />
<br />
# ORSINI MIRKO<br />
user=56897<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.06<br />
additional_phone=+39 059 2056272<br />
additional_email=<br />
<br />
# CUOGHI STEFANIA<br />
user=62899<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.10<br />
additional_phone=<br />
additional_email=<br />
<br />
# SALA ANTONIO<br />
user=63289<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.05<br />
additional_phone=+39 059 2056272<br />
additional_email=<br />
<br />
# SERGI SIMONE<br />
user=63301<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# PUVIANI MARIACHIARA<br />
user=63339<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.16<br />
additional_phone=<br />
additional_email=<br />
<br />
# NANA MBINKEU RODRIGUE CARLOS<br />
user=63340<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.07<br />
additional_phone=<br />
additional_email=<br />
<br />
# GUALDI GIOVANNI<br />
user=63341<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.03<br />
additional_phone=<br />
additional_email=<br />
<br />
# VILLANI GIORGIO<br />
user=63352<br />
location_building=MO-27<br />
location_floor=01<br />
location_room=020/P1.01<br />
additional_phone=+39 059 2056309<br />
additional_email=<br />
<br />
# GROSSI FEDERICA<br />
user=63353<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/P2.02<br />
additional_phone=059 205 6333<br />
additional_email=<br />
<br />
# CORVINO CHRISTIAN ALESSANDRO<br />
user=64168<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# FEDERICO MARIA<br />
user=70063<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.06<br />
additional_phone=<br />
additional_email=<br />
<br />
# SALADINO DANIELA<br />
user=70090<br />
location_building=MO-26<br />
location_floor=02<br />
location_room=027/EA.04<br />
additional_phone=+39 059 205 6323<br />
additional_email=<br />
<br />
# GAWINECKI MACIEJ<br />
user=70927<br />
location_building=MO-27<br />
location_floor=02<br />
location_room=024/P2.15<br />
additional_phone=<br />
additional_email=<br />
<br />
# HAIDER RAZIA<br />
user=76465<br />
location_building=<br />
location_floor=<br />
location_room=<br />
additional_phone=<br />
additional_email=<br />
<br />
# SANTINELLI PAOLO<br />
user=76466<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=031/C.04<br />
additional_phone=+39059205 6270<br />
additional_email=<br />
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# PALANISAMY NITHIYANANTHAM<br />
user=76473<br />
location_building=MO-27<br />
location_floor=00<br />
location_room=030/E.11<br />
additional_phone=<br />
additional_email=</div>22051https://web.ing.unimo.it/wiki/index.php?title=Valerio_Di_Lecce&diff=7097Valerio Di Lecce2010-01-08T12:09:41Z<p>22051: /* Publications */</p>
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<div>Ing. Valerio Di Lecce<br><br />
Ph.D. Student, 24th Cycle<br />
<br />
Department of Information Engineering <br><br />
University of Modena and Reggio Emilia <br><br />
Strada Vignolese 905, I–41125 Modena MO, ITALY<br />
<br />
Phone: +39 059 2056191 <br><br />
e-mail: valerio.dilecce@unimore.it<br />
<br><br><br />
<br />
== Publications ==<br />
<br><br />
'''Journals:'''<br />
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• A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation", ''IEEE Electron Device Letters'', Vol. 30 no. 10, Oct. 2009, pp. 1021–1023<br />
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<br />
'''Conferences and Workshops:'''<br />
<br />
• A. Chini, '''V. Di Lecce''', M. Esposto, G. Verzellesi, S. Lavagna, A. Cetronio, and C. Lanzieri, "Trapping phenomena in field-plated high power GaAs pHEMTs", ''17th European Heterostructure Technology Workshop—HeTech 2008'', Venice (Italy), Nov. 2008<br />
<br />
• E. Zanoni, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, '''V. Di Lecce''', M. Esposto, A. Chini, and G. Meneghesso, "Reverse gate bias stress induced degradation of GaN HEMT", ''36th International Symposium on Compound Semiconductors—ISCS 2009'', Santa Barbara CA (USA), Sep. 2009<br />
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• M. Esposto, '''V. Di Lecce''', A. Chini, S. De Guido, A. Passaseo, and M. De Vittorio, "Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics", ''39th European Solid-State Device Research Conference—ESSDERC 2009'', Athens (Greece), Sep. 2009<br />
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• A. Chini, '''V. Di Lecce''', M. Esposto, G. Meneghesso, and E. Zanoni, "RF Degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements", ''European Microwave Week—EuMW 2009'', Rome (Italy), Sep. 2009<br />
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• G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, E. Zanoni, '''V. Di Lecce''', M. Esposto, and A. Chini, "GaN HEMT Degradation Induced by Reverse Gate Bias Stress", ''8th International Conference on Nitride Semiconductors—ICNS-8 2009'', Jeju (South Korea), Oct. 2009<br />
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• '''V. Di Lecce''', M. Esposto, M. Bonaiuti, F. Fantini, A. Chini, G. Meneghesso, and E. Zanoni, "Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
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• M. Esposto, '''V. Di Lecce''', M. Bonaiuti, F. Fantini, G. Verzellesi, S. De Guido, M. De Vittorio, A. Passaseo, and A. Chini, "Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs", ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
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• D. Saguatti, '''V. Di Lecce''', M. Esposto, A. Chini, F. Fantini, G. Verzellesi, S. Boulay, A. Bouloukou, B. Boudjelida, and M. Missous, “Design of field-plated InP-based HEMTs”, ''18th European Heterostructure Technology Workshop—HeTech 2009'', Günzburg/Ulm (Germany), Nov. 2009<br />
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• A. Chini, F. Fantini, '''V. Di Lecce''', M. Esposto, A. Stocco, N. Ronchi, F. Zanon, G. Meneghesso, and E. Zanoni, "Correlation between dc and RF degradation due to deep levels in AlGaN/GaN HEMTs", ''2009 International Electron Devices Meeting—IEDM 2009'', Baltimore MD (USA), Dec. 2009</div>22051